Droop esd and heat dissipation of flip chip power leds
Download
1 / 43

Droop, ESD and Heat dissipation of Flip-Chip Power LEDs - PowerPoint PPT Presentation


  • 845 Views
  • Uploaded on

Droop, ESD and Heat dissipation of Flip-Chip Power LEDs. Prof. Liann-Be Chang Vice Dean & Director Engineering College Green Technology Research Center (GTRC). Outline. Epitaxial technology LED process technology Flip Chip technology. MOCVD 磊晶設備. 1 set of MOCVD ( Aixtron).

loader
I am the owner, or an agent authorized to act on behalf of the owner, of the copyrighted work described.
capcha
Download Presentation

PowerPoint Slideshow about ' Droop, ESD and Heat dissipation of Flip-Chip Power LEDs ' - sinjin


An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -
Presentation Transcript
Droop esd and heat dissipation of flip chip power leds

Droop, ESD and Heat dissipation of Flip-Chip Power LEDs

Prof. Liann-Be Chang

Vice Dean & Director

Engineering College

Green Technology Research Center (GTRC)


Outline
Outline

  • Epitaxial technology

  • LED process technology

  • Flip Chip technology


Mocvd
MOCVD磊晶設備

1 set of MOCVD

( Aixtron)

2 sets of MOCVD

( Nippon Sanso)


Mocvd1
MOCVD附屬設備

層流台&防潮櫃

廢氣處理塔

特殊氣體房

氫氣儲存房

JPC廢氣處理塔

氮氣儲存房


Mocvd2
MOCVD附屬量測設備

金相顯微鏡

可對磊晶片做

初步的表面分析

高解析度X光繞射儀

可快速對成長完之磊晶片做精確

的晶格結構分析





LED晶粒製程設備

Flip-Chip Bonder

Wafer Bonding Bonder



LED標準亮度量測系統

IS-250 (直徑25cm) Keythley2420


積分球燈具量測系統

SLM-20T (直徑50cm)

Agilent E3634A (50V;4A)


LED光學量測系統

穿透反射量測儀

LED遠場角量測儀


紅外線熱影像量測儀

SC620

顯微鏡頭:25um

測溫範圍:-40~1500o


LED熱阻量測分析儀

Operating Current (mA)

ΔTj-a (oC)

Forward Volt. (VF)


Mocvd3
MOCVD

  • Apparatus(1F)3 sets of MOCVD ( Nippon Sanso + Aixtron)


Clean room
Clean Room

  • Apparatus(9F) Measurement Equipments

    Device Process Equipments




Low temperature n gan led structure
Low Temperature n-GaN LED Structure

Inserting LT n-GaN layer



Pattern sapphire substrate leds
Pattern Sapphire Substrate LEDs

平台 (flat-top)

三角形 (pyramid)



Epitaxial growth led on zno template

LED structure

ZnO buffer (300 nm)

Sapphire

Epitaxial Growth : LED on ZnO Template



Reflectance and contact resistance of ni ag based metal contacts on p type gan
Reflectance and Contact Resistance implantationof Ni/Ag-Based Metal Contacts on p-Type GaN

Ni/Ag

Ni/Ag/Au

Ni/Ag/Ti/Au


Micro channel led
Micro Channel LED implantation


Electron confine blocking effect
Electron confine (blocking) effect implantation

  • For sample B, except an additional 20-nm-thick p-type Al0.25Ga0.75N EBL inserted between the active layer and the p-type AlGaN/GaN superlattice structure to enhance the electron-

  • blocking effect, the other growth conditions and structures were the same as those for sample A.

  • The light-output power of sample

  • B increases more rapidly and

  • becomes greater than that of

  • sample A in the measurement

  • range from 25 to 130 A/cm2.

Applied Physics Express 3 (2010)


Electron decelerating effect
Electron decelerating effect implantation

Appl. Phys. Lett. (2010).



Wafer bonding technology
Wafer Bonding Technology implantation

At present, wafer bondingtechnology is used widely


The proposed flip chip structure on mos submount
The proposed Flip implantation-Chip Structure on MOS submount

  • high reflect material

heat

  • use MOS heat sink & ESD protecting substrates

  • heat flow can through the submount with high thermal conductivity material




Pn junction mos structure submount
PN Junction & MOS Structure Submount implantation

Conventional FCLED on PN Junction Submount

The Proposed FCLED on MOS Protective Submount


Esd handling capability
ESD Handling Capability implantation

  • FC-LED on PN junction

  • Non flip-chipped LED


Esd handling capability1
ESD Handling Capability implantation

  • FC-LED on MOS

Zc = 1/jωc is small for large capacitance submount


Output power intensity
Output Power Intensity implantation

  • Non Flip-chip LED luminance would be saturated at a large current injection

  • The best performance was flip-chip LED on AlN submount because AlN had higher thermal conductivity than Si


Flip chip ac led
Flip-Chip AC-LED implantation

  • We can easily design an 24 V AC-circuit directly on the submount through FC technology


Different led chip on si substrate thermal analysis
Different LED chip on Si substrate thermal analysis implantation

VLED

CLED

FCLED

CLED

VLED

FCLED (20 gold bumps)

69oC

78oC


Remote phosphor
Remote Phosphor implantation


  • Sep,2007


Thank you for determined the diffusion mechanism into GaAs….your attention


ad