Droop, ESD and Heat dissipation of Flip-Chip Power LEDs - PowerPoint PPT Presentation

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Droop, ESD and Heat dissipation of Flip-Chip Power LEDs
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Droop, ESD and Heat dissipation of Flip-Chip Power LEDs

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  1. Droop, ESD and Heat dissipation of Flip-Chip Power LEDs Prof. Liann-Be Chang Vice Dean & Director Engineering College Green Technology Research Center (GTRC)

  2. Outline • Epitaxial technology • LED process technology • Flip Chip technology

  3. MOCVD磊晶設備 1 set of MOCVD ( Aixtron) 2 sets of MOCVD ( Nippon Sanso)

  4. MOCVD附屬設備 層流台&防潮櫃 廢氣處理塔 特殊氣體房 氫氣儲存房 JPC廢氣處理塔 氮氣儲存房

  5. MOCVD附屬量測設備 金相顯微鏡 可對磊晶片做 初步的表面分析 高解析度X光繞射儀 可快速對成長完之磊晶片做精確 的晶格結構分析

  6. 化合物半導體製程無塵室

  7. 綠色科技研究中心製程實驗室

  8. 圖形化基板技術

  9. LED晶粒製程設備 Flip-Chip Bonder Wafer Bonding Bonder

  10. Wire & Bump Bonder

  11. LED標準亮度量測系統 IS-250 (直徑25cm) Keythley2420

  12. 積分球燈具量測系統 SLM-20T (直徑50cm) Agilent E3634A (50V;4A)

  13. LED光學量測系統 穿透反射量測儀 LED遠場角量測儀

  14. 紅外線熱影像量測儀 SC620 顯微鏡頭:25um 測溫範圍:-40~1500o

  15. LED熱阻量測分析儀 Operating Current (mA) ΔTj-a (oC) Forward Volt. (VF)

  16. MOCVD • Apparatus(1F)3 sets of MOCVD ( Nippon Sanso + Aixtron)

  17. Clean Room • Apparatus(9F) Measurement Equipments Device Process Equipments

  18. Methodology used in GTRC to Improve LED Performance

  19. MOCVD epitaxial technology

  20. Low Temperature n-GaN LED Structure Inserting LT n-GaN layer

  21. Optical & Electrical Characteristic

  22. Pattern Sapphire Substrate LEDs 平台 (flat-top) 三角形 (pyramid)

  23. Optical & Electrical Characteristic 74% up 2 times

  24. LED structure ZnO buffer (300 nm) Sapphire Epitaxial Growth : LED on ZnO Template

  25. Improving the luminescence by selective activation or ion implantation

  26. Reflectance and Contact Resistanceof Ni/Ag-Based Metal Contacts on p-Type GaN Ni/Ag Ni/Ag/Au Ni/Ag/Ti/Au

  27. Micro Channel LED

  28. Electron confine (blocking) effect • For sample B, except an additional 20-nm-thick p-type Al0.25Ga0.75N EBL inserted between the active layer and the p-type AlGaN/GaN superlattice structure to enhance the electron- • blocking effect, the other growth conditions and structures were the same as those for sample A. • The light-output power of sample • B increases more rapidly and • becomes greater than that of • sample A in the measurement • range from 25 to 130 A/cm2. Applied Physics Express 3 (2010)

  29. Electron decelerating effect Appl. Phys. Lett. (2010).

  30. Efficiency droop research by double-hetero structure LED

  31. Wafer Bonding Technology At present, wafer bondingtechnology is used widely

  32. The proposed Flip-Chip Structure on MOS submount • high reflect material heat • use MOS heat sink & ESD protecting substrates • heat flow can through the submount with high thermal conductivity material

  33. Core Technology : Pick/Place and U.S. Bonding

  34. Top View of Flip-Chip Power LED

  35. PN Junction & MOS Structure Submount Conventional FCLED on PN Junction Submount The Proposed FCLED on MOS Protective Submount

  36. ESD Handling Capability • FC-LED on PN junction • Non flip-chipped LED

  37. ESD Handling Capability • FC-LED on MOS Zc = 1/jωc is small for large capacitance submount

  38. Output Power Intensity • Non Flip-chip LED luminance would be saturated at a large current injection • The best performance was flip-chip LED on AlN submount because AlN had higher thermal conductivity than Si

  39. Flip-Chip AC-LED • We can easily design an 24 V AC-circuit directly on the submount through FC technology

  40. Different LED chip on Si substrate thermal analysis VLED CLED FCLED CLED VLED FCLED (20 gold bumps) 69oC 78oC

  41. Remote Phosphor

  42. Researchers from Taiwan’s Chung-Gung University have determined the diffusion mechanism into GaAs…. • Sep,2007

  43. Thank you for your attention