spezielle anwendungen des vlsi entwurfs applied vlsi design n.
Download
Skip this Video
Loading SlideShow in 5 Seconds..
Spezielle Anwendungen des VLSI – Entwurfs Applied VLSI design PowerPoint Presentation
Download Presentation
Spezielle Anwendungen des VLSI – Entwurfs Applied VLSI design

Loading in 2 Seconds...

play fullscreen
1 / 9

Spezielle Anwendungen des VLSI – Entwurfs Applied VLSI design - PowerPoint PPT Presentation


  • 158 Views
  • Uploaded on

Spezielle Anwendungen des VLSI – Entwurfs Applied VLSI design. Changes across technologies Results of Phase 5 Andy Schellin. Fundamentals. Why changing manufacturing technology? Functionally reasons Economically reasons Lower Voltage Higher frequency. Power Loss. Problems.

loader
I am the owner, or an agent authorized to act on behalf of the owner, of the copyrighted work described.
capcha
Download Presentation

PowerPoint Slideshow about 'Spezielle Anwendungen des VLSI – Entwurfs Applied VLSI design' - farica


An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -
Presentation Transcript
spezielle anwendungen des vlsi entwurfs applied vlsi design

Spezielle Anwendungen des VLSI – Entwurfs Applied VLSI design

Changesacrosstechnologies

Resultsof Phase 5

Andy Schellin

fundamentals
Fundamentals
  • Why changing manufacturing technology?
  • Functionally reasons
  • Economically reasons
  • Lower Voltage
  • Higher frequency

Power Loss

problems
Problems
  • RC delay of global wires
  • Gate oxid tunneling
  • Sub-threshold leakage
  • Leakage grows exponentially

Fig:1 Leakage power grows exponentially [6]

further technology improvements
Further technology improvements
  • 3D – Transistors (FinFET) with high-k gate dielectric
  • Low-k materials for separating wires
  • Substrate Biasing
  • 5nm technology until 2019
references
References

[1] http://www.ieee.org/portal/cms_docs_societies/sscs/PrintEditions/200701.pdf

[2] http://www.eetimes.com/design/automotive-design/4016329/Solve-leakage-and-dynamic-power-loss

[3]http://www.cs.cmu.edu/afs/cs/academic/class/15740-f03/public/doc/discussions/uniprocessors/power/isca02.pdf&sa=X&scisig=AAGBfm2jwcfhEOYVpQsHCHvWjLK134ml3g&oi=scholarr&ei=VxzwUPyMC8bJswb294G4DA&sqi=2&ved=0CDwQgAMoADAA

[4] http://www.dailytech.com/IDF+2011+Intel+Looks+to+Take+a+Bite+Out+of+ARM+AMD+With+3D+FinFET+Tech/article22719.htm

[5] Xiaodong Zhang, “High Performance Low Leakage Design Using Power Compiler and Multi-Vt Libraries”, Synopsys, SNUG, Europe, 2003, www.synopsys.com, 10/9/2007

[6] http://www.anandtech.com/print/1611

backup
Backup

Fig2: Scaling Results for Circuit Performance [1]