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# 2. VLSI Basic - PowerPoint PPT Presentation

2. VLSI Basic. Hiroaki Kunieda Dept. of Communication and Integrated Systems Tokyo Institute of Technology. VLSI Design with Verification. Specification. System Design. System Verification. RTL. Logic Design. Logic Verification. Netlist. Layout Design. Layout Verification. Mask Data

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### 2. VLSI Basic

Hiroaki Kunieda

Dept. of Communication and Integrated Systems

Tokyo Institute of Technology

Specification

System Design

System Verification

RTL

Logic Design

Logic Verification

Netlist

Layout Design

Layout Verification

Test Data

[Completeness]

• Function {|}=NAND function: complete

• 1: a|(a|a) = a|a’ = 1

• 0: {a|(a|a}|{a|(a|a)} = 1|1 = 0.

• a’: a|a = a’.

• ab: (a|b)|(a|b) = ab

• a+b: (a|a)|(b|b) = a’|b’=a+b

• NOR function: complete

• AND and OR function: not complete

[Irredundant] no literal can be removed.

redundant Ab+ab’=a

• “MOS” : sandwichstructure of Metal, Oxide, and Silicon (semiconductor substrate).

• The positive voltage on the polysilicon forms gate attracts the electron at the top of the channel.

• The threshold voltage (Vt) collects enough electrons at the channel boundary to form an inversion layer (p -> n).

Field Oxide

Gate Oxide

• Cg: gate capacitance

= 0.9fF/μm2 (2 μprocess)

• Cgs/Cgd: source/drain overlap capacitance

=Cox W (Cox: gate/bulk overlap capacitance)

Linear region

Saturated region

• nMOS transistor become on by applying high voltage to gate to provide current.

• pMOS transistor becomes on by applying low voltage to gate to provide current

VDD

Pullup network (pMOS)

• output is connected to VDD

Ro/W

CoW

Ro/W

CoW

Pulldown network (nMOS)

• Output is connected to VSS

Pull down

Pull up

VSS

VOH

Noise Margin

NML = VIL-VOL

NMH = VOH-VIH

VIH

VOL

VIL

Pullup network (pMOS)

• output is connected to VDD

when ab=0.

VDD

Pulldown network (nMOS)

• Output is connected to VSS

when ab=1.

VSS

Dual graph

(ab+c)’

si =aibici =(aibi)ci = Pici

ci+1=aici+bici+aibi=(aibi)ci+aibi =Pici+Gi

Wire Delay

Let’s suppose that Wp = 2 Wn which makes the same pull up and pull down current with ON-resistance of,

Ro/W

where Ro is the resistance per unit width. (ex. 200Ωum）

Load capacitance consisting of drain junction capacitance is corresponded by the area of the drain such as

CoW

where Co is the capacitance per unit width (ex. 50 fF/um)

Input capacitance is also represented by

CoW

L=35 nm=0.035 um (45nm)

CoW

Ro/W

Ro/W

CoW

Pull down

Pull up

Pull up current is represented by VDD/Ron(p).

Pull down current is represented by VDD/Ron(n)

Gate Delay

(W=0.35um, L=0.035um)

= (Ro/W) x (CoW)

= Ro Co

= 200 Ωum　ｘ　50pF/um

=10psec

Pull up/downcurrents are represented by ON resistance,

which are reversely corresponded by the channel width W.

• The first term represents the delay of the 1st stage, where the output charge and the input charge of the 2nd stage is pull up or down by the current driven by the 1st gate. Both charge and current corresponds to the size or the channel width w.

• The second term represents the delay of the 2nd stage. Without any load to the gates, the delay becomes identical to, which depends on the process.

Delay = 1st stage delay + 2nd stage delay

= (Ro/W1) (CoW1+CoW2) + (Ro/W2)(CoW2)

= RoCo (2+W2/W1)

= 10 psec x 3 = 30 psec

Delay = 1st stage delay + 2nd stage delay

Delay = 10 psec (2+1+10) = 130.0 psec

Delay = 10 psec (2+3+3.33) =83.3 psec

Wires DelayElmore Delay Model

Delta1=r1 x (C1+---+Cn) =n ｔc

Delta2=r2 x (C2+----+Cn) =(n-1)ｔc

DeltaN=rn x Cn =ｔc

total=Delta1+ ----- + DeltaN

=[n(n+1)/2] ｔc

Rline=2.0 Ω-um

Cline=0.3fF/um

Ro=200 Ω*um

Co= 50 fF/um

W1=W2=0.35u

Line=2N um

Delay=(R0/W1) (CoW1+CoW2+ClineLine) +(RlineLine) (CoW2+(Cline/2)Line)

=200 x （2x50f + 2xN)+2 x (10f+0.5N)

= 50 nsec + 26*N nsec (line =2xN um)

Delay = Ro/W1 (CoW1+CoW2) =2.5K x 20fF =50.0 nsec (line=0)

Rline=500 Ω/um

Cline=300 fF/um

Ro=25 kΩ*um

Co=0.5 fF/um

W1=W2=0.35u

Line=0.5um

Delay=(R0/W1) (CoW1+CoW2+ClineLine) +(Ro/W1+RlineLine) (CoW2+(Cline/2)Line)

=50K x （0.5 f + 50K x (0.25+0.125)

= 37.5 nsec + 18.8 nsec =56.3 nsec (line =0.5 um)

Delay = Ro/W1 (CoW1+CoW2) =50K x 0.5fF =25 nsec (line=0)

Logic 0 transfer

Logic 1 transfer

Charge sharing: the stored data of A is

connected to the latch’s output. Additional

buffer may be required to drive output load.

• tristate inverter produces restored output or Hi-Impedance Z

• Used as latch circuit

Functional Schematic of DFF with Scan

ACSEL Lab University of California, Davis

Random Access Memory (RAM)

Static RAM (SRAM)

Dynamic RAM (DRAM)

Static RAMCell

• Precharge bit and bit’

• Asert Select line

• Write

• Bit and bit’ lines are set to desired values.

• Select is set to 1.

RAM　Ｃｅｌｌ

• Write

• set bit line

• Precharge firstly bit line

• Activate word line

Control Circuit