'Minority carrier' presentation slideshows

Semiconductor Devices A brief review

Semiconductor Devices A brief review. Dr. K. Fobelets. Purpose of the course. Study bipolar devices in more detail Diodes and BJTs Closer to reality: recombination What causes the delays in these devices when switching?. The most frequently used sentence in this course will be:.

1.33k views • 98 slides

Fundamentals of Optoelectronic Materials and Devices

Fundamentals of Optoelectronic Materials and Devices. ??????? ??. Hsing -Yu Tuan ( ????. Department of Chemical Engineering, National Tsing-Hua University. Textbook in this lecture. Optoelectronics and photonics priciples and practices, S.O. Kasap 1999

554 views • 55 slides

Semiconductor Devices Lecture 5, pn-Junction Diode

Semiconductor Devices Lecture 5, pn-Junction Diode. Content. Contact potential Space charge region, Electric Field, depletion depth Current-Voltage characteristic Depletion layer capacitance Diffusion capacitance Transient Behavior Junction Breakdown.

512 views • 42 slides

Semiconductor Device Modeling and Characterization EE5342, Lecture 5-Spring 2005

Semiconductor Device Modeling and Characterization EE5342, Lecture 5-Spring 2005. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Equipartition theorem. The thermodynamic energy per degree of freedom is kT/2 Consequently,. Carrier velocity saturation 1.

455 views • 37 slides

Chapter 2 Solid-State Electronics

Chapter 2 Solid-State Electronics. Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock. Chapter Goals. Explore semiconductors and discover how engineers control semiconductor properties to build electronic devices.

721 views • 37 slides

The Blue Laser Diode (chapter 11~15)

The Blue Laser Diode (chapter 11~15) . Speaker:Meng-Lun Tsai National Changhua University of Education. Outline. Room-Temperature Pulsed Operation of Laser Diodes. InGaN-Based Multi-Quantum-Well Laser Diodes. InGaN Multi-Quantum-Well Laser Diodes with Cleaved Mirror Cavity Facets.

638 views • 36 slides

Semiconductor Device Modeling and Characterization EE5342, Lecture 4-Spring 2002

Semiconductor Device Modeling and Characterization EE5342, Lecture 4-Spring 2002. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Summary. The concept of mobility introduced as a response function to the electric field in establishing a drift current

489 views • 34 slides

Lecture 13: Part I: MOS Small-Signal Models

Lecture 13: Part I: MOS Small-Signal Models. Prof. Niknejad. Lecture Outline. MOS Small-Signal Model (4.6) Diode Currents in forward and reverse bias (6.1-6.3). Total Small Signal Current. Trans conductance. C onductance. Role of the Substrate Potential.

667 views • 29 slides

EE 5340 Semiconductor Device Theory Lecture 13 - Fall 2009

EE 5340 Semiconductor Device Theory Lecture 13 - Fall 2009. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc. Reverse bias junction breakdown. E crit for reverse breakdown (M&K**). Taken from p. 198, M&K**. Casey Model for E crit. Reverse bias junction breakdown.

299 views • 29 slides

Semiconductors

Semiconductors. Semiconductors. A Semiconductor is a material whose resistivity is between that of a good conductor and a good insulator . Examples of materials which are semiconductors are Silicon and Germanium. Semiconductors.

849 views • 28 slides

Chapter 11 BJT Static Characteristics

Semiconductor Device Physics. Chapter 11 BJT Static Characteristics. Deviations from the Ideal. Chapter 11. BJT Static Characteristics. Common base. Deviations , due to model limitations. Common emitter. Chapter 11. BJT Static Characteristics. W. I E. I C. P+. N. P. ?. +.

543 views • 26 slides

Ideal Diode Model

1.1k views • 24 slides

Direct and Indirect Semiconductors

Chapter 3. Carrier Action. P honon. P hoton. P hoton. Direct and Indirect Semiconductors. E - k Diagrams. E c. E c. E v. E v. GaAs, GaN (direct semiconductors). Si, Ge (indirect semiconductors). Large change in momentum is required for recombination

249 views • 24 slides

??????? Semiconductor Materials and Device Characterization

??????? Semiconductor Materials and Device Characterization Topic 6: charge pumping technique and HS experiment Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University. Topics: Ch. 6 in D. K. Schroder. Charge pumping method (p. 379)

485 views • 23 slides

Lecture 13

216 views • 21 slides

Lecture 13

214 views • 21 slides

Lecture 13

213 views • 21 slides

Chapter 6-1. PN-junction diode: I-V characteristics

Chapter 6-1. PN-junction diode: I-V characteristics. Topics : PN Junction under bias (qualitative discussion) Ideal diode equation Deviations from the ideal diode Charge-control approach. PN junction under various bias conditions. V A = 0. V A < 0. V A > 0. E. E. E. p. n. p n.

736 views • 15 slides

Bipolar Transistor

????? ??????? ???? ?????? ?????? ?????? ???? ??????????? ??????? ????? 31350. ????? ??' 14. Bipolar Transistor. (BJT - bipolar junction transistor). Bipolar Transistor. Bipolar transistor was invented by Walter Brattain, John Bardeen and William Shockley (Bell Labs) in 1949.

1.2k views • 12 slides

JFET (Junction Field Effect Transistor)

JFET (Junction Field Effect Transistor). Unipolar device (one polarity of charge carrier). Voltage controlled (gate voltage controls drain current). High input impedance ( ?10 9 -10 12 ?). No minority carrier storage. Source and drain are interchangeable in most

591 views • 3 slides