半導體量測技術
This presentation is the property of its rightful owner.
Sponsored Links
1 / 23

半導體量測技術 Semiconductor Materials and Device Characterization PowerPoint PPT Presentation


  • 66 Views
  • Uploaded on
  • Presentation posted in: General

半導體量測技術 Semiconductor Materials and Device Characterization Topic 6: charge pumping technique and HS experiment Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University. Topics: Ch. 6 in D. K. Schroder. Charge pumping method (p. 379)

Download Presentation

半導體量測技術 Semiconductor Materials and Device Characterization

An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -

Presentation Transcript


Semiconductor materials and device characterization

半導體量測技術

Semiconductor Materials and Device Characterization

Topic 6: charge pumping technique and HS experiment

Instructor: Dr. Yi-Mu Lee

Department of Electronic Engineering

National United University


Topics ch 6 in d k schroder

Topics: Ch. 6 in D. K. Schroder

  • Charge pumping method (p. 379)

  • Haynes-Shockley experiment (time of flight)

  • Photoelectric effect (time of flight)

  • Introduction to mobility

  • Presentation: 12/29 = 3 students

    01/05 = 5 students

  • Final exam: (3:00pm~5:30pm)


Charge pumping cp method

Charge pumping (CP) method


Semiconductor materials and device characterization

Step-1


Semiconductor materials and device characterization

Step-2


Semiconductor materials and device characterization

Step-3


Semiconductor materials and device characterization

Good for small-size device:


Semiconductor materials and device characterization

Variable base mode:


The haynes shockley experiment 1 2

The Haynes-Shockley Experiment (1/2)

1951, Bell Labs

independent measurement of minority carrier mobility () and diffusion coefficient (D)

basic principles

- field applied to semiconductor bar

-narrow pulse, high concentration of minority carriers generated

-pulse drifts due to

(time to drift a fixed distance  mobility


Haynes shockley exp 2 2

Haynes-Shockley Exp. (2/2)

  • Minority Carrier:

    • generation by laser pulse

    • diffusion due to nonuniform concentration

    • drift by E-field

    • recombination to remove the excess carriers


Semiconductor materials and device characterization

-pulse spreads due to diffusion ( diffusion coefficient)

In Fig. 4-18 (n-type material n0 >> p0)

-pulse of holes generated at t=0

-

-

-pulse of holes drift indirection

-pulse monitored at x = L; drift velocity Vd is


Semiconductor materials and device characterization

H-S Pulse Spreading

consider diffusion without drift or recombination

 Eq (13b) or (4-33b) (p. 418):


Semiconductor materials and device characterization

Note that

 the amplitude decreases w/ time

 the pulse width increased w/ time


Semiconductor materials and device characterization

pulse width = full width @ 1/e pts.

 for a fixed peak height

, the pulse width x can be found

(21)(4-45)

where td is the time corresponding to the pulse spread x

 (21) 

, or

(22)(4-46)


Semiconductor materials and device characterization

Example 4-6n-type Ge is used in a Haynes-Schockley experiment. The length of the Ge bar is 1 cm, the probes are spaced 0.95 cm apart.

 battery voltage is 2.0 V

 td = 0.25 ms

 pulse width t (oscilloscope) = 117 s

Find p and Dp (and check agreement w/ the Einstein relations


Semiconductor materials and device characterization

so


Homework 6 in d k schroder

Homework 6 in D. K. Schroder:

  • 6.4

  • 6.5

  • 6.6

  • Review:

    • P. 531~536(Fig. 8.16)

    • P. 540~551 (mobility)

  • Interesting website: http://jas.eng.buffalo.edu/education/semicon/diffusion/diffusion.html


  • Login