slide1
Download
Skip this Video
Download Presentation
半導體量測技術 Semiconductor Materials and Device Characterization

Loading in 2 Seconds...

play fullscreen
1 / 23

半導體量測技術 Semiconductor Materials and Device Characterization - PowerPoint PPT Presentation


  • 136 Views
  • Uploaded on

半導體量測技術 Semiconductor Materials and Device Characterization Topic 6: charge pumping technique and HS experiment Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University. Topics: Ch. 6 in D. K. Schroder. Charge pumping method (p. 379)

loader
I am the owner, or an agent authorized to act on behalf of the owner, of the copyrighted work described.
capcha
Download Presentation

PowerPoint Slideshow about ' 半導體量測技術 Semiconductor Materials and Device Characterization' - rupert


An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -
Presentation Transcript
slide1

半導體量測技術

Semiconductor Materials and Device Characterization

Topic 6: charge pumping technique and HS experiment

Instructor: Dr. Yi-Mu Lee

Department of Electronic Engineering

National United University

topics ch 6 in d k schroder
Topics: Ch. 6 in D. K. Schroder
  • Charge pumping method (p. 379)
  • Haynes-Shockley experiment (time of flight)
  • Photoelectric effect (time of flight)
  • Introduction to mobility
  • Presentation: 12/29 = 3 students

01/05 = 5 students

  • Final exam: (3:00pm~5:30pm)
the haynes shockley experiment 1 2
The Haynes-Shockley Experiment (1/2)

1951, Bell Labs

independent measurement of minority carrier mobility () and diffusion coefficient (D)

basic principles

- field applied to semiconductor bar

-narrow pulse, high concentration of minority carriers generated

-pulse drifts due to

(time to drift a fixed distance  mobility

haynes shockley exp 2 2
Haynes-Shockley Exp. (2/2)
  • Minority Carrier:
    • generation by laser pulse
    • diffusion due to nonuniform concentration
    • drift by E-field
    • recombination to remove the excess carriers
slide16

-pulse spreads due to diffusion ( diffusion coefficient)

In Fig. 4-18 (n-type material n0 >> p0)

-pulse of holes generated at t=0

-

-

-pulse of holes drift indirection

-pulse monitored at x = L; drift velocity Vd is

slide17

H-S Pulse Spreading

consider diffusion without drift or recombination

 Eq (13b) or (4-33b) (p. 418):

slide18

Note that

 the amplitude decreases w/ time

 the pulse width increased w/ time

slide20

pulse width = full width @ 1/e pts.

 for a fixed peak height

, the pulse width x can be found

(21)(4-45)

where td is the time corresponding to the pulse spread x

 (21) 

, or

(22)(4-46)

slide21

Example 4-6 n-type Ge is used in a Haynes-Schockley experiment. The length of the Ge bar is 1 cm, the probes are spaced 0.95 cm apart.

 battery voltage is 2.0 V

 td = 0.25 ms

 pulse width t (oscilloscope) = 117 s

Find p and Dp (and check agreement w/ the Einstein relations

homework 6 in d k schroder
Homework 6 in D. K. Schroder:
  • 6.4
  • 6.5
  • 6.6
  • Review:
    • P. 531~536 (Fig. 8.16)
    • P. 540~551 (mobility)
  • Interesting website: http://jas.eng.buffalo.edu/education/semicon/diffusion/diffusion.html
ad