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Updates to Materials Database and Etch Rate Testing Procedures for Plasma Etching

This update outlines the additions made to the materials database, including Cl2+BCl3+CHCl3+N2 plasma as an etchant, while retaining the previously added Cl2+He plasma. It discusses the limited data available on Cl2+BCl3+CHCl3+N2 plasma etch rates from Williams 1996 and 2003. The text also reviews the comparison of etch rates and the effects of optical exposure times (1-second and 5-second) on photoresist layers over different substrates, including SiO2 and Al. Finally, it addresses a question about generating the incident beam profile at the resist surface.

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Updates to Materials Database and Etch Rate Testing Procedures for Plasma Etching

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  1. NanoFabTrainer Update Nick Reeder, March 14, 2014

  2. Change to Materials Database • Added Cl2+BCl3+CHCl3+N2 plasma as an etchant. Retained the Cl2+He plasma, which I had added previously. • Williams’ 1996 paper has little data for Cl2+BCl3+CHCl3+N2plasma, and 2003 paper has none. See next slide for etch rates.

  3. Etch Rates (nm/min) per Williams 1996 Proposed Simulated Etch Rates (nm/min)

  4. Testing Dill Expose Code with Multiple Layers • Next three slides compare 1-second exposure with layers of: • Photoresist alone • Photoresist above SiO2 • Photoresist above Al

  5. One-second exposure, 1.5 µm photoresist layer above Si substrate.

  6. One-second exposure, 1.5 µm photoresist layer above 0.5 µm SiO2 layer above Si substrate.

  7. One-second exposure, 1.5 µm photoresist layer above 0.5 µm Al layer above Si substrate.

  8. Testing Dill Expose Code with Multiple Layers • Next three slides compare 5-second exposure with layers of: • Photoresist alone • Photoresist above SiO2 • Photoresist above Al

  9. Five-second exposure, 1.5 µm photoresist layer above Si substrate.

  10. Five-second exposure, 1.5 µm photoresist layer above 0.5 µm SiO2 layer above Si substrate.

  11. Five-second exposure, 1.5 µm photoresist layer above 0.5 µm Al layer above Si substrate.

  12. Question From Our Last Meeting • How to generate the incident beam profile at resist surface (as in the figure at right from p. 5 of Andrew’s photoresist chapter), given intensity, width of mask opening, distance of mask from surface, and thickness of resist layer?

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