NanoFab Trainer Update

1. NanoFabTrainer Update Nick Reeder, March 14, 2014

2. Change to Materials Database • Added Cl2+BCl3+CHCl3+N2 plasma as an etchant. Retained the Cl2+He plasma, which I had added previously. • Williams’ 1996 paper has little data for Cl2+BCl3+CHCl3+N2plasma, and 2003 paper has none. See next slide for etch rates.

3. Etch Rates (nm/min) per Williams 1996 Proposed Simulated Etch Rates (nm/min)

4. Testing Dill Expose Code with Multiple Layers • Next three slides compare 1-second exposure with layers of: • Photoresist alone • Photoresist above SiO2 • Photoresist above Al

5. One-second exposure, 1.5 µm photoresist layer above Si substrate.

6. One-second exposure, 1.5 µm photoresist layer above 0.5 µm SiO2 layer above Si substrate.

7. One-second exposure, 1.5 µm photoresist layer above 0.5 µm Al layer above Si substrate.

8. Testing Dill Expose Code with Multiple Layers • Next three slides compare 5-second exposure with layers of: • Photoresist alone • Photoresist above SiO2 • Photoresist above Al

9. Five-second exposure, 1.5 µm photoresist layer above Si substrate.

10. Five-second exposure, 1.5 µm photoresist layer above 0.5 µm SiO2 layer above Si substrate.

11. Five-second exposure, 1.5 µm photoresist layer above 0.5 µm Al layer above Si substrate.

12. Question From Our Last Meeting • How to generate the incident beam profile at resist surface (as in the figure at right from p. 5 of Andrew’s photoresist chapter), given intensity, width of mask opening, distance of mask from surface, and thickness of resist layer?