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The latest update to the NanoFabSimulator's etch code introduces user prompts for etchant type and etching time, utilizing etch rates from Williams' studies to calculate material removal. The process is iterative, simulating one minute of etching at a time, which may prolong lengthy etching sessions. Key questions addressed include the adequacy of one-minute etch resolution, assumptions on etch rates, and the need for material distinction based on deposition methods. Additionally, considerations for photolithography states for photoresists are discussed.
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NanoFabSimulator Update Nick Reeder, March 30, 2012
Update to Etch Code • Etch code asks user for etchant and time, and uses etch rates from Williams’ papers to compute amount of materials to remove. • For unknown rates, warns user and assumes 0. • Process is highly iterative, simulating one minute of etching at a time. Lengthy etch times take a while to execute.
Questions • One-minute etch resolution okay? • Etch rate assumptions okay? • Need to distinguish materials based on method of deposition? (E.g., wafer silicon vs. sputtered vs. evaporated….) • What parameter(s) should user provide for Polish operation?
Questions • Looking ahead to photolithography, how many states do we need to distinguish for photoresists? • Freshly applied • Soft-baked, unexposed • Soft-baked, exposed • Hard-baked, unexposed • Hard-baked, exposed • …?
