Nanostructured broadband antireflection coatings on alinp fabricated by nanoimprint lithography
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Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography . Advisor : P. C. Yu Speaker : G. S. Hong. Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720, Tampere, P.O. Box 692, 33101 Tampere, Finland .

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Nanostructured broadband antireflection coatings on alinp fabricated by nanoimprint lithography

Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography

Advisor : P. C. Yu

Speaker : G. S. Hong

Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720, Tampere, P.O. Box 692, 33101 Tampere, Finland


Outline
Outline

  • Introduction

  • Experiment

  • Results

  • Conclusion


Advisor p c yu speaker g s hong

Introduction

  • Moth-eye AR structures.

  • AlInP has a very large band gap (1.3~2.4eV) and high transparency.

  • This letter demonstrates moth-eye antireflection coatings fabricated by UV-nanoimprintlithography (NIL) on AlInP/GaAsstructure.

moth’s head

moth-eye


Fabrication
Fabrication

The yield is approximately 95% over an 4 cm^2 consisted of 4.4x1e9 nanocones.

Arrays of metallic nanocones fabricated by UV-nanoimprintlithography

Juha M. Kontio *, Janne Simonen, Juha Tommila, Markus Pessa

Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101, Tampere, Finland


Advisor p c yu speaker g s hong

Fabrication steps (1)

Laser interference lithography (LIL)

UV - NIL

http://0rz.tw/IAGJV

http://0rz.tw/mev4C


Advisor p c yu speaker g s hong

Fabrication steps (2)

UV-NIL resist

Ge

PMMA

Si



Advisor p c yu speaker g s hong

Simulation & Measurement

A :30/170/370 nm (top diameter/base diameter/height)

B : 50/220/370 nm

C : 80/300/440 nm

Reference : 1 um AlInP


Advisor p c yu speaker g s hong

Arithmetic average reflectivities

  • The simulated values are lower than the measured ones partly due to :

  • The imperfect model of the dielectric function.

  • The roughness of the etched surfaces.

  • The silver mirror used as a reference in the measurements.


Advisor p c yu speaker g s hong

PL intensities

Absorption of the laser and the PL in the AlInP layer

GaAs’PL

Reflection of the laser


Conclusion
Conclusion

  • An average reflectivity of 2.7% was achieved for wide spectral range 450–1650 nm.

  • Using PL measurements, we have shown that the surface recombination and patterning induced losses are low.