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Professor Yoshiji HORIKOSHI ( 堀越　佳治 )

2008 IWNE. Professor Yoshiji HORIKOSHI ( 堀越　佳治 ). School of Science and Engineering, Waseda University. Current Research Field: Electron/electric material engineering. Professor Yoshiji HORIKOSHI. 2008 IWNE. Graduate School Attended

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Professor Yoshiji HORIKOSHI ( 堀越　佳治 )

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  1. 2008 IWNE Professor Yoshiji HORIKOSHI (堀越　佳治) School of Science and Engineering, Waseda University Current Research Field: Electron/electric material engineering 2008 IWNE

  2. Professor Yoshiji HORIKOSHI 2008 IWNE • Graduate School Attended Graduate School : North-East University(東北大学) Graduate Course : Doctor Division of Engineering Specialty (Japanese) : 電気工学 • Degree Degree (Japanese) : 工学博士 Degree Acquisition University Name (Country) (Japanese): 東北大学 Degree Field Field Name (Japanese) : 結晶工学 Field Name (English) : Crystal Growth 2008 IWNE

  3. Professor Yoshiji HORIKOSHI 2008 IWNE • Employment Record in Research • (Japanese) 1971-1996 日本電信電話公社(現NTT基礎研究所)1983-1984 西独マックスプランク固体研究所客員研究員1993 英国インペリアルカレッジ客員研究員1995-1997 東北大学電気通信研究所客員教授1997-1998 北海道大学量子界面エレクトロニクス研究所客員教授1997 東京大学大学院工学研究科講師1997- 早稲田大学材料技術研究所研究員 • (English) 1971-1996 Research stuff, NTT Basic Research Laboratories Exec. Manager, Physical Science Res. Lab., NTT(1990)1983-1984 Guest Researcher, Max-Planck-Institut fur Festkorperforschung, Stuttgart1993 Guest Researcher, Imperial College, London1995-1997 Guest Professor, Tohoku University, Sendai1997-1998 Guest Professor, Hokkaido University, Sapporo1997 Lecturer, University of Tokyo1997- Professor, Kagami Memorial Research Laboratory for Materials Science and Technology, Waseda University 2008 IWNE

  4. Professor Yoshiji HORIKOSHI 2008 IWNE • Academic Award • 1. Academic Award (Japanese) 電子情報通信学会奨励賞 Year 1975 • 2. Academic Award (Japanese) NTT本部長記念盾 Year 1976 • 3. Academic Award (Japanese) 電子情報通信学会論文賞 Year 1977 • 4. Academic Award (Japanese) NTT本部長表彰研究会開発賞 Year 1987 • 5. Academic Award (Japanese) 応用物理学会論文賞 Year 1989 • 6. Academic Award (Japanese) 科学技術庁長官賞研究功績者表彰 Year 1992 • 7. Academic Award (Japanese) 応用物理学会SSDM92 Best Paper Year 1993 2008 IWNE

  5. Professor Yoshiji HORIKOSHI 2008 IWNE Research interests • Semiconductor Quantum Dot Network • Crystal Growth and Characterization of wide-bandgap semiconductors • Quantum Effect Devices • 選択エピタキシャル成長とナノ構造 • 低次元物性 • ワイドギャップ半導体の成長 • フラーレン薄膜の形成と物性 2008 IWNE

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