Low- k Dielectrics: Materials and Process Technology. Rebeca C. Diaz EE 518, Penn State Instructor: Dr. J. Ruzyllo April 13, 2006. Outline. Motivation for low- k dielectrics Required properties of low- k dielectrics Proposed materials Most promising materials
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Rebeca C. Diaz
EE 518, Penn State
Instructor: Dr. J. Ruzyllo
April 13, 2006
minimized with Cu
FLARE (Honeywell) and VELOX (Schumacher)
(1) “Low-k Dielectrics.” http://fcs.itc.it/
k as low as 2.0
Porosity cannot be added
Better mechanical stability
Better thermal stability
Technology in place
k as low as 1.9
k below 1.9 by adding porosity
More promising low-k materials
More uniform deposition
Extendable to future technologies
Single-wafer processCVD vs. Spin-on Deposition2
(1) Fisica Chimica delle Superfici e Interfacce. “Low-k Dielectrics.” <http://fcs.itc.it/MAMeBROCHURE/low-k%20dielectrics.pdf> 31 Mar 2006.
(2) Clarke, Michael E. Application Note MAL123: “Introducing Low-k Dielectrics into Semiconductor Processing.” Mykrolis. 2003. <http://www.mykrolis.com/publications.nsf/ docs/MAL123> 31 Mar 2006
(3) Plumber et al. “Back-end Technology.” Silicon VLSI Technology: Fundamentals, Practice and Modeling. Chap. 11. Prentice Hall, NJ, USA. 2000.
(4) Nishi, Yoshio and Doering, Robert. “Alternate Interlevel Dielectrics.” Handbook of Semiconductor Manufacturing Technology. Chap. 12. Marcel Dekker, Inc. NY, USA. 2000.