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Front-end electronics for silicon detectors F. Corsi, C. Marzocca, G. Matarrese. Work in progress within the Bari group. ISS specs and directions. Develop a solid state 64 pixel probe for g -ray imaging. Energy of the g photon : 140 keV. Event rate: 4 kHz. Probe area: 22mm x 22mm.

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front end electronics for silicon detectors f corsi c marzocca g matarrese

Front-end electronics for silicon detectorsF. Corsi, C. Marzocca, G. Matarrese

Work in progress within the Bari group

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

iss specs and directions
ISS specs and directions
  • Develop a solid state 64 pixel probe for g-ray imaging.
  • Energy of the g photon : 140 keV.
  • Event rate: 4 kHz.
  • Probe area: 22mm x 22mm.
  • Spatial res.: <2 mm.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

si detectors
Si detectors
  • Avalanche photo detectors;
    • good energy res. : ENC/M;
    • a portion of the leak. curr is increased by M;
    • high sensitivity of M to Vsupply and to T (2.5% /°C): diff. bias requirements;
    • poor linearity for charge measurement appl.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

si detectors1
Si detectors
  • Silicon drift detectors;
    • good energy res. (low anode cap.);
    • good linearity (depending on det. design);
    • suitable for probe application;
    • leakage current (cooling);
    • double face processing.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

si detectors2
Si detectors
  • PIN diodes;
    • acceptable energy res. (dep. on Ileak and CD.);
    • exc. linearity;
    • low fab. cost;
    • active pixels;
    • simple readout scheme.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

si detectors enc vs sh time fiorini

(ENC/M)

Si detectors: ENC vs sh. time (Fiorini)

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

slide7

0.9 mm

1st DESIGN of PIN + JFET structure (1999):

PIN Diode Area = 0.32 mm2 ; JFET’s W/L = 200/12 mm.

Tethrode, or double-gate JFET configuration: two separate front-gate / back-gate (p-well) contacts.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

slide8

2nd DESIGN of PIN + JFET structure:

Size = 1800 x 900 m2 , Diode Area = 0.8 mm2, W/L=100/6

Smaller JFET cap + integrated feed-back and injection capacitors

+ p-stop floating ring (to reduce parasitic guard ring Cap)

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

slide9

other layout of PIN + JFET structures:

1800 x 900 m2 , Diode Area = 0.8 mm2, W/L=100/4

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

character of pin diodes by irst
Character. of PIN diodes by IRST
  • eff. act. area.: 3mm2;
  • peak wav.: 550nm;
  • resp. @ 550nm: 0.37A/W;
  • Quantum eff. @ 550nm: >80%;
  • Ileak < 50pA;
  • CD=1pF;
  • Cut-off freq.:110 MHz.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

provis design assumptions
Provis. design assumptions
  • PIN diodes (active area+interc.);
  • Segmented scint.: 5000 vis.ph/g ph;
  • 2000 - to - 4000 el./g ph/det. pix.;
  • FE ARCH.: CSA+SH.+LATCH.- DISC.;
  • ENC <150 e- r.m.s. (Ileak=50pA, CD+Cbond=1.2 pF);

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

front end structure

2 thresh.

latched

.

discr.

Front-End structure

Analogue

Front-End

C

f

Test Input

Shaper

Delay

line

g

m

2nd

Ord.

C

o

C

C

i

d

Detector

Shaper_out

CSA_out

from trigger circuitry

to fast-or circuitry

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

probe architecture

to PC

Probe architecture

Read-out clock:

fck=160kHz

Trigger from fast OR circuitry

2nd lev.

1st lev.

to PC

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

probl in deep sub m tech
Probl. in deep sub-m. tech.
  • Stat. fluctuations of the FE performances.
  • Mismatch problems beween circuit replicas (both intra-chip and inter-chip) at extr. low currents.
  • Need of a robust design of the circuitry against process par. fluctuations.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

csa solutions
CSA solutions
  • Adaptive Ileak canc. (Krummenacker);

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

csa solutions cont d
CSA solutions (cont’d)
  • Adaptive P-Z canc. (Rehak et al.)

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

slide17

Adaptive Vfp bias

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

slide18

Adaptive Vfp bias

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

some exp result on the adaptive p z csa
Some exp. result on the adaptive P-Z CSA
  • CSA in 0.8 mm CMOS for SDD (spectroscopy)

External shaper

Internal shaper (adaptive

pole-zero canc.)

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

provisional conclusions and workplan
Provisional conclusions and workplan
  • Preliminary experiments with A250 (Amptek) FE;
  • use of the adaptive P-Z CSA;
  • design and fab. of first prototypes of CSA in deep submicron CMOS;
  • electr. and stat. characterization of prot’s.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

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