Front end electronics for silicon detectors f corsi c marzocca g matarrese
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Front-end electronics for silicon detectors F. Corsi, C. Marzocca, G. Matarrese. Work in progress within the Bari group. ISS specs and directions. Develop a solid state 64 pixel probe for g -ray imaging. Energy of the g photon : 140 keV. Event rate: 4 kHz. Probe area: 22mm x 22mm.

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Front-end electronics for silicon detectors F. Corsi, C. Marzocca, G. Matarrese

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Front end electronics for silicon detectors f corsi c marzocca g matarrese

Front-end electronics for silicon detectorsF. Corsi, C. Marzocca, G. Matarrese

Work in progress within the Bari group

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Iss specs and directions

ISS specs and directions

  • Develop a solid state 64 pixel probe for g-ray imaging.

  • Energy of the g photon : 140 keV.

  • Event rate: 4 kHz.

  • Probe area: 22mm x 22mm.

  • Spatial res.: <2 mm.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Si detectors

Si detectors

  • Avalanche photo detectors;

    • good energy res. : ENC/M;

    • a portion of the leak. curr is increased by M;

    • high sensitivity of M to Vsupply and to T (2.5% /°C): diff. bias requirements;

    • poor linearity for charge measurement appl.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Si detectors1

Si detectors

  • Silicon drift detectors;

    • good energy res. (low anode cap.);

    • good linearity (depending on det. design);

    • suitable for probe application;

    • leakage current (cooling);

    • double face processing.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Si detectors2

Si detectors

  • PIN diodes;

    • acceptable energy res. (dep. on Ileak and CD.);

    • exc. linearity;

    • low fab. cost;

    • active pixels;

    • simple readout scheme.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Si detectors enc vs sh time fiorini

(ENC/M)

Si detectors: ENC vs sh. time (Fiorini)

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Front end electronics for silicon detectors f corsi c marzocca g matarrese

0.9 mm

1st DESIGN of PIN + JFET structure (1999):

PIN Diode Area = 0.32 mm2 ;JFET’s W/L = 200/12 mm.

Tethrode, or double-gate JFET configuration: two separate front-gate / back-gate (p-well) contacts.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Front end electronics for silicon detectors f corsi c marzocca g matarrese

2nd DESIGN of PIN + JFET structure:

Size = 1800 x 900 m2 , Diode Area = 0.8 mm2, W/L=100/6

Smaller JFET cap + integrated feed-back and injection capacitors

+ p-stop floating ring (to reduce parasitic guard ring Cap)

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Front end electronics for silicon detectors f corsi c marzocca g matarrese

other layout of PIN + JFET structures:

1800 x 900 m2 , Diode Area = 0.8 mm2, W/L=100/4

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Character of pin diodes by irst

Character. of PIN diodes by IRST

  • eff. act. area.: 3mm2;

  • peak wav.: 550nm;

  • resp. @ 550nm: 0.37A/W;

  • Quantum eff. @ 550nm: >80%;

  • Ileak < 50pA;

  • CD=1pF;

  • Cut-off freq.:110 MHz.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Provis design assumptions

Provis. design assumptions

  • PIN diodes (active area+interc.);

  • Segmented scint.: 5000 vis.ph/g ph;

  • 2000 - to - 4000 el./g ph/det. pix.;

  • FE ARCH.: CSA+SH.+LATCH.- DISC.;

  • ENC <150 e- r.m.s. (Ileak=50pA, CD+Cbond=1.2 pF);

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Front end structure

2 thresh.

latched

.

discr.

Front-End structure

Analogue

Front-End

C

f

Test Input

Shaper

Delay

line

g

m

2nd

Ord.

C

o

C

C

i

d

Detector

Shaper_out

CSA_out

from trigger circuitry

to fast-or circuitry

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Probe architecture

to PC

Probe architecture

Read-out clock:

fck=160kHz

Trigger from fast OR circuitry

2nd lev.

1st lev.

to PC

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Probl in deep sub m tech

Probl. in deep sub-m. tech.

  • Stat. fluctuations of the FE performances.

  • Mismatch problems beween circuit replicas (both intra-chip and inter-chip) at extr. low currents.

  • Need of a robust design of the circuitry against process par. fluctuations.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Csa solutions

CSA solutions

  • Adaptive Ileak canc. (Krummenacker);

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Csa solutions cont d

CSA solutions (cont’d)

  • Adaptive P-Z canc. (Rehak et al.)

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Front end electronics for silicon detectors f corsi c marzocca g matarrese

  • Adaptive Vfp bias

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Front end electronics for silicon detectors f corsi c marzocca g matarrese

  • Adaptive Vfp bias

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Some exp result on the adaptive p z csa

Some exp. result on the adaptive P-Z CSA

  • CSA in 0.8 mm CMOS for SDD (spectroscopy)

External shaper

Internal shaper (adaptive

pole-zero canc.)

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


Provisional conclusions and workplan

Provisional conclusions and workplan

  • Preliminary experiments with A250 (Amptek) FE;

  • use of the adaptive P-Z CSA;

  • design and fab. of first prototypes of CSA in deep submicron CMOS;

  • electr. and stat. characterization of prot’s.

Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.


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