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Digital Integrated Circuits - week three -

Digital Integrated Circuits - week three -. Gheorghe M. Ş tefan http://arh.pub.ro/gstefan/ - 2014 -. BASIC CMOS CIRCUITS see Appendix: Basic circuits. Actual digital signals CMOS switches Gates: Inverter (NOT) NAND and NOR gates AND-NOR gates Many-input gates Tristate buffer

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Digital Integrated Circuits - week three -

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  1. Digital Integrated Circuits- week three - Gheorghe M. Ştefan http://arh.pub.ro/gstefan/ - 2014 -

  2. BASIC CMOS CIRCUITSsee Appendix: Basic circuits • Actual digital signals • CMOS switches • Gates: • Inverter (NOT) • NAND and NOR gates • AND-NOR gates • Many-input gates • Tristate buffer • Transmission gate • Flip-Flops Digital Integrated Circuits - week three

  3. Actual signals VDD evolved from 5V to 1V VHmin = VLmax is impossible, because equality is impossible VHmin > VLmax is a must Digital Integrated Circuits - week three

  4. Forbidden region Digital Integrated Circuits - week three

  5. Noise margin NM0 = VIL – VOL NM1 = VOH - VIH Digital Integrated Circuits - week three

  6. CMOS switches z : hi-impedance Digital Integrated Circuits - week three

  7. MOS as switching device CGS = COXLW RON = 1/(n COX (W/L)(VGS – VT)) Digital Integrated Circuits - week three

  8. NOT: the inverter circuit Static behavior • region A: X = 0 • region B & C: transition • region D: X = 1 Digital Integrated Circuits - week three

  9. Dynamic behavior • tpHL: time from VOH to VOH/2 • tpLH: time from 0 to VOH/2 Digital Integrated Circuits - week three

  10. Load capacitance, CL Load capacitance has three components: • The intrinsic capacitance of the driver inverter: parasitic drain/bulk capacitance, CDB • Wire capacitance: Cwire = Cthickox LwireWwire • Input capacitance of the receiver inverter: CG = CGp + CGn = Cox(WpLp + WnLn) CL = CDB + Cwire + CG For long wires connecting the driver to receiver Cwire dominates the value of CL Digital Integrated Circuits - week three

  11. tpHL: discharging CL at the constant current IDS(sat) • tr-: pMOS lin, nMOS cut • tr+: pMOS cut, nMOS sat • tr+ to (tr+tpHL): CL discharges at the constant current IDn(sat) IDn(sat)=(nCox(Wn/Ln)(VOH –VTn)2)/2 dvout/dt = -IDn(sat)/CL = (VOH /2 - VOH )/tpHL tpHL = CL RONn(1/(1-(VTn/ VOH))) tpHL = knCL RONn tp = (tpHL + tpLH )/2 Digital Integrated Circuits - week three

  12. Buffering From tpHL/LH = kn/pCL RONn/p tp = t0(Wload/Wdriver) t0 is tpfor Wload=Wdriver What is the solution for Wload >> Wdriver ? tp(buffered) = tp0(W1/Wdriver + W2/W1 + Wload/W2) Digital Integrated Circuits - week three

  13. Designing rule for buffering The delay introduced by the new inverters must be minimal: (W2/W1 + Wload/W2)’ = 0 W2 = (W1Wload)1/2 W2/W1 = Wload/W2= (Wload/W1 )1/2 The ratio of successive W must be constant Example: let be Wload/Wdriver = n, then W1/Wdriver = W2/W1 = Wload/W2 = n1/3 For n=1000, results the acceleration: α = tp(no-buffer)/tp(buffered) = (n2)1/3/3 = 33.3 Digital Integrated Circuits - week three

  14. Power dissipation • Switching energy: charging & discharging CL • Short-circuit energy: non-zero rise/fall times of the signal • Leakage current energy: important for L < 65nm Digital Integrated Circuits - week three

  15. Switching power During each period, T, each capacitor • is charged to VDD through RONp with QL = CLVDD • is discharged to 0 through RONn The energy to move QL from VDD to 0 is VDDQLthen: pswitch = (VDD CL VDD)/T = CL V2DD fclock Digital Integrated Circuits - week three

  16. Short-circuit power Depends on the saturation current psc = IDD(mean) VDD Digital Integrated Circuits - week three

  17. The leakage current • Increase exponentially with temperature • Increases exponentially with reduction in VT • Dominated by the sub-threshold leakage pleakage = IleakageVDD Digital Integrated Circuits - week three

  18. The NAND gate • For both input 1, the output is 0 • For at least one input 0 the output is 1 For n  1.7p, and Wn = Wp What is the fastest transition? What is the slowest transition? Digital Integrated Circuits - week three

  19. The NOR gate • For both input 0, the output is 1 • For at least one input 1 the output is 0 For n  1.7p, andWn = Wp What is the fastest transition? What is the slowest transition? What do you prefer, NANDs or NORs? Digital Integrated Circuits - week three

  20. Switching activity Switching activity, σ, on the gate’s output depend on the logic function pswitch = CL V2DD fclock => pswitch = σCL V2DD fclock σ : probability of switching from 0 to 1 For 2-input AND: σ = POUT-0 POUT-1 = (1-PAPB)PAPB Conservative estimate for big systems: σ = 1/8. Usually is measured: σ = 1/10 Digital Integrated Circuits - week three

  21. Glitching The activity to the output of a logic circuit depends also by the propagation time. If ABC switches from 010 to 111 Then O2 does not change according to the logic, but it actually glitches. Dangers: • The glitch can be latched • Increases the energy consumption Digital Integrated Circuits - week three

  22. Many-input gates tpmax(one-level) ~ 8×n×Cin tpmax(log-level) ~ 2×2×Cin + 2×n×Cin Digital Integrated Circuits - week three

  23. AND-NOR gates Logic: depth = 3, size = 7 Electric: depth = 1, size = 4 Similar approach for: (A + BC)’, (A(B+C))’, … Digital Integrated Circuits - week three

  24. Home work 3 Problem 1: compute αforWload/Wdriver = 1000 when between driver NOT and load NOT 4 inverter circuits are inserted. Problem 2: compute σ for a 2-input NOR gate and for a 2-input XOR gate. Problem 3: draw, using 3 CMOS pairs, the circuit which performs the function (A(B+C))’. Problem 4: design an asynchronously reset-able (RST) and preset-able (SET) DF-F. (Problem 5: design a synchronously reset-able DF-F.) Digital Integrated Circuits - week three

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