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A 1.8-V MONOLITHIC SIGE HBT POWER AMPLIFIER WITH A NOVEL PROPOSED LINEARIZING BIAS CIRCUIT

A 1.8-V MONOLITHIC SIGE HBT POWER AMPLIFIER WITH A NOVEL PROPOSED LINEARIZING BIAS CIRCUIT. Ping-Chun Yeh; Kuei-Cheng Lin; Lee, C.Y.; Hwann-Kaeo Chiou; Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on Volume 1, 6-9 Dec. 2004 Page(s):305 - 308 vol.1. 指導教授：林志明 老師

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A 1.8-V MONOLITHIC SIGE HBT POWER AMPLIFIER WITH A NOVEL PROPOSED LINEARIZING BIAS CIRCUIT

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  1. A 1.8-V MONOLITHIC SIGE HBT POWER AMPLIFIER WITH A NOVEL PROPOSED LINEARIZING BIAS CIRCUIT Ping-Chun Yeh; Kuei-Cheng Lin; Lee, C.Y.; Hwann-Kaeo Chiou; Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on Volume 1, 6-9 Dec. 2004 Page(s):305 - 308 vol.1 指導教授：林志明 老師 研究生：林高慶 學號：s95662002

  2. Outline • Abstract • Introduction • Linearizer schematics • The schematic diagram of the power amplifier • Performance summary and comparison • Conclusions

  3. Abstract • Use TSMC 0.18 ㎛SiGe HBT technology • An output power over 20 dBm with a power-added efficiency higher than 42.4% under 1.8 volt operation for a 2 GHz power amplifier

  4. Introduction • With the emergence of SiGe HBTs as a new contender for RF and Microwave applications • The liearizers using adaptive bias circuit were widely used in improving the both linearity and efficiency

  5. Linearizer schematics

  6. The simulation of shorting capacitor C

  7. The simulation of impedance ratio (R1/R2)

  8. The schematic diagram of the power amplifier

  9. The simulationof the power amplifier

  10. Performance summary and comparison

  11. Conclusions • The size effect of the impedance ratio are extensively investigated. • A MOSFET junction capacitor to form an additional feedback control is proposed to obtain a significant improvement.

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