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Novel SiGe Semiconductor Devices for Cryogenic Power Electronics

Novel SiGe Semiconductor Devices for Cryogenic Power Electronics. ICMC/CEC August-September 2005 Keystone, Colorado. Outline. Authors and Sponsors Goals and Applications Why SiGe? Designs and results SiGe heterojunction diodes Cryogenic power converter Summary. Outline.

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Novel SiGe Semiconductor Devices for Cryogenic Power Electronics

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  1. Novel SiGe Semiconductor Devices forCryogenic Power Electronics ICMC/CEC August-September 2005Keystone, Colorado

  2. Outline • Authors and Sponsors • Goals and Applications • Why SiGe? • Designs and results • SiGe heterojunction diodes • Cryogenic power converter • Summary

  3. Outline • Authors and Sponsors • Goals and Applications • Why SiGe? • Designs and results • SiGe heterojunction diodes • Cryogenic power converter • Summary

  4. Authors Rufus Ward, Bill Dawson, Lijun Zhu, Randall Kirschman GPD Optoelectronics Corp., Salem, New Hampshire Guofu Niu, Mark Nelms Auburn University, Dept. of Electrical and Computer Engineering, Auburn, Alabama Mike Hennessy, Eduard Mueller, Otward Mueller, MTECH Labs./LTE, Ballston Lake, New York GPD Optoelectronics Corporation

  5. Sponsors US Office of Naval Research US Army Aviation and Missiles Command Defense Advanced Research Projects Agency

  6. Outline • Authors and Sponsors • Goals and Applications • Why SiGe? • Designs and results • SiGe heterojunction diodes • Cryogenic power converter • Summary

  7. Goals • Develop SiGe devices for cryogenic power use • Exhibit the performance advantages of SiGe versus Si for cryogenic power • Specifically: • Demonstrate prototype SiGe power diodes for cryogenic operation • Demonstrate a 100-W power conversion circuit, to deep cryogenic temperatures. • To ~ 55 K

  8. Application Areas • For power management and distribution (PMAD) • Power conversion for storage and distribution • Power conversion for motors/generators • E.g. “All-Electric” ship • DoD applications • Cryogenic systems for ships and aerospace • Propulsion systems • Superconducting or cryogenic • Temperature ~ 60 – 65 K (for HTSC)

  9. Outline • Authors and Sponsors • Goals and Applications • Why SiGe? • Designs and results • SiGe heterojunction diodes • Cryogenic power converter • Summary

  10. Why SiGe? • Can incorporate desirable characteristics of both Si and Ge • Can optimize devices for cryogenic applications by selective use of Si and SiGe • SiGe provides additional flexibility through band-gap engineering (% of Ge, grading) and selective placement • All device types work at cryogenic temperatures • Diodes • Field-effect transistors • Bipolar transistors • Combinations of above (IGBTs, thyristors, ...) • Devices can operate at all cryogenic temperatures (as low as ~ 1 K if required) • Compatible with conventional Si processing

  11. Outline • Authors and Sponsors • Goals and Applications • Why SiGe? • Designs and results • SiGe heterojunction diodes • Cryogenic power converter • Summary

  12. SiGe Diode Simulations

  13. SiGe Heterostructure Diode Frontside contact SiGe epilayer P+ Si epilayer N– Si substrate N+ Backside contact (N+ backside implant)

  14. SiGe vs Si Diode Characteristics

  15. SiGe vs Si Forward Voltage

  16. SiGe vs Si and SiC Forward Voltage SiGe Univ. of Auburn measurements.

  17. SiGe vs Si Reverse Recovery Univ. of Auburn measurements.

  18. SiGe vs Si Reverse Recovery Univ. of Auburn measurements.

  19. SiGe vs Si Reverse Recovery MTECH Labs. measurements.

  20. SiGe vs Si Reverse Recovery MTECH Labs. measurements.

  21. Outline • Authors and Sponsors • Goals and Applications • Why SiGe? • Designs and results • SiGe heterojunction diodes • Cryogenic power converter • Summary

  22. 48 V out 24 V in Inductor SiGe diode + Input capacitor Output capacitor + Power supply SiGe HBT Load – – Opto isolator Pulsegenerator Drive circuit ~20 – 300 K Switching pulse SiGe Boost Converter

  23. SiGe 100 W Cryo Boost Converter100 kHz, 24 V in, 48 V out

  24. SiGe 100 W Cryo Boost ConverterBackside

  25. Cryostat for Measuring 100 W Circuits

  26. 100 W SiGe Power Converter in Cryostat

  27. SiGe vs Si diodes in 100 W Cryo Boost Converter

  28. Outline • Authors and Sponsors • Goals and Applications • Why SiGe? • Designs and results • SiGe heterojunction diodes • Cryogenic power converter • Summary

  29. Summary • Cryogenic power conversion is of interest for a range of applications within DoD and elsewhere. • For cryogenic power conversion, SiGe devices are potentially superior to devices based on Si or Ge. • We are developing SiGe semiconductor devices for cryogenic power applications. • We have simulated SiGe diodes: results indicate improvements over Si diodes and have guided design. • We have designed, fabricated, and used SiGe diodes (and HBTs) in power converters operating at cryogenic temperatures and converting >100 W.

  30. Outline • Authors and Sponsors • Goals and Applications • Why SiGe? • Designs and results • SiGe heterojunction diodes • Cryogenic power converter • Summary

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