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SINANO-NANOSIL Workshop Edinburgh September 19th, 2008. Atomic functionalities in Silicon devices: go beyond the FET by using single dopants and artificial silicon atoms A presentation of the AFSiD european project by Marc SANQUER, Coordinator. Atomic Functionalities on Silicon Devices.

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slide1

SINANO-NANOSIL Workshop

Edinburgh September 19th, 2008

Atomic functionalities in Silicon devices: go beyond the FET by using single dopants and artificial silicon atoms

A presentation of the AFSiD europeanproject

by Marc SANQUER, Coordinator

http://www.afsid.eu/

slide2

Atomic Functionalities on Silicon Devices

FET Proactive 2008

NanoICT

New Functionalities

Coordinator: Dr. Marc SANQUER ( CEA-Grenoble)

Team Leaders: Dr. Marco FANCIULLI (Agrate-Brianza),

Pf. David JAMIESON (Melbourne), Pf. Dieter KERN (Tübingen),

Dr. Sven ROGGE (Delft), Dr. David WILLIAMS (Cambridge)

http://www.afsid.eu/

slide3

Extracted from AFSiD ABSTRACT ( DoW):

….control of a single charge and spin on individual dopants in silicon…

…study single atomic devices, either real (i.e. dopant) or artificial (i.e. quantum dots) …

…silicon Single Electron Transistor (SET) of 10 nm, allowing operation at low temperature (but much above 4.2K). …

…Devices with one dopant or two dopants will be identified and selected from their electrical characteristics…

…These devices are the smallest possible switches using silicon technology. …

…Building SET-FET hybrid devices on chip.

http://www.afsid.eu/

slide4

State of the art: renewed interest for single dopant silicon devices

all around the world

NTT, Japan

CQCT, Australia

single-charge-transistor

operation by a single-acceptor ( Boron) quantum dot.

Atomic placement of single P in Silicon

by STM

T=26K

S.R. Schofield et al. PRL91, 136104 (2003)

Y. Ono et al. APL 90, 102106 (2007)

Japan: Enhancing semiconductor device performance using ordered dopant arrays

T. Shinada et al. Nature 437, 1128 (2007).

USA: Linear Stark Effect in a Single Acceptor inside Schottky barrier ( PtSi MOSFETs)

L. E. Calvet et al. PRL98, 096805 (2007)

http://www.afsid.eu/

slide5

State-of-art: SET devices need CMOS integration and high T operation

Necessity for a better yield and control in fabrication of SiliconSET towards

the fabrication of artificial atoms and molecules in silicon

Very good results and devices in NTT, Japan

ex: Fujiwara APL 88, 053121(’06)

In AFSiD:

we use an alternative route using one of the main advantages of CMOS foundries (LETI), i.e. dopant implantation + Melbourne expertise in

single dopant implantation + yield and control obtained in CMOS foundries

http://www.afsid.eu/

slide6

Objectives of AFSID (1)

X

Nitride sacers

metallic gate

SOI

E

doped SOI

X

  • A single atom transistor –based on a single donor in a silicon nanoscopic channel or on an undoped channel forming an artificial atom.

H. Sellier et al. PRL 97, 206805 (2006)

M. Hofheinz et al. EPJB54, 299-307, (2006).

http://www.afsid.eu/

slide7

Objectives of AFSID (2)

  • A Silicon SET used as an electrometer of great stability
  • in time and robustness, operated at least at T= 4.2K

NiSi

antenna,coupler

top gate

Constriction

spacer

Control Gate

10nm

e-

SOI QDot

http://www.afsid.eu/

slide8

DRAIN

SOURCE

Ibias

Idrain

control

node

SET

GATE

DRAIN

Objectives (3)

  • a SET-FET hybrid circuits made on-chip to implement new functionalities
  • a silicon device where single spin are detected

SOURCE

A latching switch(two-terminal, bistable device with hysteretic I − V curves) building block for non volatile memory, logic gates

A spin sensitive SET

A SET-FET hybrid with non monotonic Id-Vgs characteristics, high current drive

See proposal S. Mahapatra et al. (2005)

for multivalued logic and memory,

or NDR device.

Proposal by Likharev et al. (2001)

http://www.afsid.eu/

slide9

AFSiD Background (1): CMOS + implantation through masks

Melbourne

Grenoble

D. N. Jamieson, et al., APL86, 202101 (2005)

M. Hofheinz et al. EPJB54, 299-307, (2006)

M. Vinet et al. IEEE EDL26 (2005)

H. Sellier et al. PRL97, 206805 (2006)

Grenoble

Delft

http://www.afsid.eu/

slide10

MANIPULATION

READ

OUT

QUBIT

INITIALIZATION

AFSiD Background (2): + multigate-multidot devices

Tübingen

Hitachi-Cambridge

Quantum cellular automaton

Charge quantum bit

C. Single et al. , APL 78, 1421 (2001)

J. Gorman et al. , PRL 95, 090502 (2005)

Background in coupled SETs is used to design and measure optimally Silicon Coupled SET or SET-FET devices (including agressive designs down to 10nm size)

http://www.afsid.eu/

slide11

expected impact of AFSID

http://www.afsid.eu/

slide12

Exemple of first LETI fabrications (1)

LITHOGRAPHY

Achievement of High density / low spacing litho

S. Pauliac , CEA-LETI

High resolution

+ Overlay accuracy (Precision of alignement

between two levels) better than 10nm

http://www.afsid.eu/

slide13

Example of first LETI fabrications (2)

AFTER GATE- ETCHING

For AFSiD: several ten’s of designs multi-gates (at active level (in-plane gates) or gate level( top gates) , several implant splits ( source-drain, channel, single dopant implantation)

http://www.afsid.eu/

slide14

for 10nm SOI

SOI Thickness

Exemple of first LETI fabrications (3)

Choice of the Dopant implantation dose and energies:

As or Se DOPANTS

SiO2 oxide 2nm included

consumption of silicon during gate oxide growth, thermal budget effect (modification of the Gaussian distribution) have been further implemented (not shown)

http://www.afsid.eu/

slide15

121Sb14+ 70 keV

P, As…

PMMA

PMMA

2x2 mm2 gate

GND

Vd>0

Undoped Si region

N+

h+

e-

N+

h+

e-

FIB aperture0.1 to 1 mm2

e-

BOX

Single hits

Beam On

0.1 ion/s

In-Situ detection of single dopant implantation in Melbourne:

1) By IBIC (Ion Beam Induced Charge)

Jamieson et al., APL 86 202101 (2005)

2) By monitoring the change in the source-drain current due to ion impact

Batra et al. APL 91, 193502 (2007)

http://www.afsid.eu/

slide16

To conclude:

Collaborations with NANOSIL

explicitly in the dissemination Plan of AFSiD

AFSiD Schedule (2-20082-2011):

First batch available in January 2009,

First results during the first Semester of 2009

Second batch start in July 2009.

http://www.afsid.eu/