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Overall view of Radiation Detectors Group activities

This text provides an overview of the activities of the Radiation Detectors Group at CNM, including their research, collaborations, and developments in radiation detectors. It also highlights the expansion of the CNM Clean Room and the acquisition of new equipment.

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Overall view of Radiation Detectors Group activities

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  1. Overall view of Radiation Detectors Group activities Manuel Lozano

  2. CNM Clean Room expansion • From 1000 to 1500 m2 • New equipments ready with partial coverage for 15 cm (6’’) wafers • We plan to do prototype runs of simple detectors in 6’’ in 2010 New ion implanter for 6’’

  3. Started in 1996 12 people 6 PhD, 4 PhD students, 2 Eng. 2 senior + 1 PhD student from Power devices group More researchers at CNM from other department joining radiation detector activities Circuit design Device development Simulation Radiation effects Radiation detector group

  4. PhD Manuel Lozano Enric Cabruja Miguel Ullán Giulio Pellegrini Celeste Fleta David Quirion Salvador Hidalgo David Flores Engineers David Almansa Joaquín Rodríguez PhD students Sergio Díez Juan Pablo Balbuena Daniela Bassignana Consuelo Guardiola Pablo Fernández Incorporation of a CPAN Engineer and a CSIC Electronic Technician Increased technical capacity Radiation Detector Group

  5. Collaboration with other Spanish Groups IFIC IFAE IFCA University Santiago de Compostela University Barcelona R&D in radiation detectors at CNM

  6. IFIC • ALIBAVA detector readout system • ALIBAVA Telescope • Modules for ATLAS upgrade • APDs for tracking in future accelerators (Angeles Faus project)

  7. System finished 20 units already distributed 20 more units manufactured Upgrade for test beam telescope Upgrade for ethernet connectivity ALIBAVA: A readout system for microstrip silicon sensors

  8. Study of radiation hardness of 0.25 µm SiGe BiCMOS technologies from IHP (Germany) Study of radiation hardness of LDMOS transistors for DC-DC converters. Understanding radiation degradation mechanisms Simulation and modeling of irradiated devices (transistors, detectors, etc) Embedded fanins for Endcap modules Dummies Modules for ATLAS upgrade 1st IHPtest chip 1st IBMtest chip 2nd IHPtest chip

  9. GICSERV • Easy access through the Spanish “Access to Large Facilities” Program: ICTS GICSERV • Projects related to radiation detectors: • 2010: 5 projects approved (1 rejected) • 3D pixels for CMS, 3D for synchrotron, dummies for IBL, proof of concept for Totem, UBM for DEPFET bump bonding • 2009: 7 projects approved (1 rejected) • 3D medipix-type detectors; Stripixels; Thin pixel detectors; Thin strip detectors; Atlas pixels with slim edge; UBM for DEPFET bump bonding • 2008: 5 projects approved • 2007: 3 projects approved • Big increase in radiation detector activity in CNM Clean Room • GICSERV Progam working very satisfactory

  10. Technologies under development • Planar & 3D pixels for IBL and ATLAS upgrade 3D detectors • Thin devices • Thin pixels for LHCb upgrade • 3D detector technology • 3D pixels for LHCb • IR transparent detectors • Double side strip detectors • Stripixels • Active edge and trenched detectors • Ultrathin 3D detector • Neutron detectors • Avalanche Photodiodes • 6 inches processing: pixel detectors only (no poly)

  11. Planar & 3D pixels for IBL and ATLAS upgrade • CNM and IFAE are part of the ATLAS 3D Collaboration for the IBL (Insertable B-layer) of the ATLAS Pixel detector • Collaboration being formed. MoU to be signed soon. Ref.: O. Rohne – Vertex 2009

  12. Run already started Based on SOI wafers 100, 150 and 200 µm thick active devices Strip detectors with integrated fanins in double metal technology Grooves in silicon to integrate optical fibres to measure deformation GICSERV funded Thin devices GICSERV

  13. Thin pixels for LHCb upgrade • First tests of bump bonding of thin pixel detectors with Timepix chip. • Detectors already manufactured at CNM • Waiting for thinning and bump bonding • GICSERV funded GICSERV

  14. 3D detector technology • Second institute in the world (after Stanford) in developing a 3D detector technology • Success with Medipix type pixel sensors • Now we are designing of a new mask set for ATLAS pixel sensors • Work done in the framework of RD50 collaboration. Electron collecting strip detectors • Bias Voltage fixed at 150V for all irradiated samples • Non-irradiated sample biased at 18V • Detector’s ceramic based board temperature between -10°C to -15°C • Measured with ALIBAVA system (25ns shaping time) GICSERV Partially funded GICSERV

  15. In collaboration with Glasgow University First 3D Medipix-like sensor bump bonded to Timepix chip Successfully tested in CERN test beam Pion beam Individual pion tracks telescope DUT 3D pixels for LHCb GICSERV

  16. In collaboration with IFCA Run almost finished 12 different detectors Common parameters: active area= 1.2x1.5 cm2 circular window in the back metal 256 readout strips with 1.5 cm length IR transparent detectors GICSERV SiO2 thickness map (wafer 2) Strips with 3 µm Al width lines

  17. Double side strip detectors developed for Monash University (Australia) Also developing double side packaging and wire bonding Future collaboration with Universidad de Huelva for nuclear physics Double side strip detectors Stripixels • Combination of the concept of double side reading with 3D contacts • Better performace than classic stripixels • Single side processing • 2D position sensitivity • 2N readout channels (instead of N2) • Simulations and mask design ready • Wafers to be processed GICSERV

  18. Trenches used to reduce the dead area at the edge of the sensor (also named edgeless, slim-edge, ...) Work started in collaboration with IFAE (Cristobal Padilla) Features: Implanted edge side Backplane and edge in the same electrode Designed detectors: PAD Microstrips MediPix2 Circular Active edge and trenched detectors

  19. Thin membrane 300um Etched backside Ultrathin 3D detector • 10 µm thick detector • Virtually no entry window • Used for tracking of light particles GICSERV

  20. Moderator Moderator Converter Converter Detector Detector Neutron detection • Neutrons interact very lightly with matter and cannot be detected by ionization • Neutron detection can not be made directly with silicon devices • It is necessary to use conversion layers and detect the converted particle: • Fast neutrons  Moderator  slow down • Slow neutrons  Converter  capture • High cross-section • Charged particle with high E • It’s possible develop compatible compounds with Si H-rich materials like polyethylene 10B Materials with high cross-section for neutrons

  21. Planar covered diodes only achieve 3% efficiency Enough for many applications When more efficiency id needed, 3D structures are needed Textured surfaces Holes filled with converter material Pillar type diodes surrounded by converter material Future High efficiency neutron detectors

  22. Simulation of Geiger mode APDs • Device simulation of Geiger mode APDs with Sentaurus • AMS HV 0.35 µm CMOS technology. • Difficulty to get technology parameters • Some are deduced from technological kit, others are estimated indirectly.

  23. Avalanche Photodiodes (APDs) • Power Devices and Radiation Detectors Groups at IMB-CNM have started a new research line in optoelectronic silicon detectors. • Cover the needs of the scientific community with custom made devices designed for specific applications • We have finished electrical and technological simulations • We are now designing the masks • Next year we will process the devices. • We plan to develop • Linear mode APDs (to use with scintillators) • Geiger mode APDs high energy tracking • In the future, also SiPMs • We are open for collaboration and feedback from other groups Electric field in the avalanche zone

  24. Announcement Next RD50 meeting will be held in Barcelona (31st May, 1st & 2nd June 2010) http://cern.ch/rd50/

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