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I-V/C-V results with p and n-type CZ devices

I-V/C-V results with p and n-type CZ devices. * TD generation in MCz-si *Proton irradiation results *Annealing of MCz-Si *Processing issues *Mask sets in Helsinki. TD generation. Thermal Donor generation (Homogeneity).

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I-V/C-V results with p and n-type CZ devices

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  1. I-V/C-V results with p and n-type CZ devices *TD generation in MCz-si *Proton irradiation results *Annealing of MCz-Si *Processing issues *Mask sets in Helsinki J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  2. TD generation J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  3. Thermal Donor generation (Homogeneity) • We have not observed enhanced TD generation when the passivation was made by PECVD (Plasma Enhanced CVD) Si3N4 @3000C, which contains H2 10-30%. • See talk by Esa Tuovinen at 3rd RD50 Workshop • http://rd50.web.cern.ch/RD50/3rd-workshop/ J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  4. TD generation J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  5. 24 GeV/c irradiation J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  6. Annealing J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  7. Annealing J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  8. Mask sets in Helsinki AC-coupled strip detector -768 strips & 128 strips minis -p80m w20 m N-well pad detector J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  9. Higher Jleak in strips? J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

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