1 / 23

Report from CNM activities

Report from CNM activities. Giulio Pellegrini Centro Nacional de Microelectronica Barcelona, Spain. Mask design. spreading. Diodes 2D. 3x3 matrix. Medipix2. Test structures. Atlas pixel. 3d pads. strips. Test for SEM. Long strip. MOS. 10x10 matrix. Pilatus. Layout.

rlupe
Download Presentation

Report from CNM activities

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Report from CNM activities Giulio Pellegrini Centro Nacional de Microelectronica Barcelona, Spain

  2. Mask design spreading Diodes 2D 3x3 matrix Medipix2 Test structures Atlas pixel 3d pads strips Test for SEM Long strip MOS 10x10 matrix Pilatus

  3. Layout 3 detectors have been bump bonded in VTT to a Medipix2 chip. 3 will be done soon

  4. Fabricated detectors

  5. Double sided 3D Electrode fabrication: ICP etching of the holes: Bosch process, ALCATEL 601-E Holes partially filled with 3 µm LPCVD poly Doping with P or B Holes passivated with 2 µm TEOS SiO2 (all fabrication done in-house) • First run is p-in-n: • 250 μm p+ columns in 300 μm n-type substrate • -Deep RIE-ICP. • Load-lock manual one 4” wafer • SF6 etching • C4F8 passivation • Cooled mechanical clamping :He-Ln2 • Possibility of Cryogenic etching. C. Fleta

  6. Bump bonding at CNM • Small clean room class 100 at CNM dedicated to packaging: Flip chip, Wire bonding, CMP • Joint project with IFAE (High Energy Physics Institute) • Bump bonding machine Süss Microtech FC150 • Installation finished last week • Bumping process ready: electrodeposited SnPb and SnAg • CMP G&P POLI-400L (Installation pending)

  7. Holes etching

  8. polysilicon Poly filling

  9. Poly-n+ Si-n+ Doping of poly

  10. Poly etching

  11. Second etching

  12. Second poly filling

  13. Si-n- Si-p+ Si-n+ SiO2 Poly-p+ Poly-n+ Al/Cu Passiv Final sample • Mask Levels • Back-window • N-DIFF • N-HOLES • P-HOLES • POLY • WINDOW • METAL • PASSIV • Bump bonding

  14. 3D technology • 10 m holes • 55m pitch • 90 minutes etching • 300 m thick wafer • Aspect ratio 24:1

  15. 3D technology 10um 45um

  16. 3D technology pixels strips

  17. Polysilicon contact Opening in the passivation Metal P-type Hole Pixel configuration

  18. Medipix 2

  19. Atlas pixels

  20. Strips (DC coupled) Pilatus Test structures

  21. Testing • Irradiation with neutrons- please see Celeste´s talk • Charge collection- please see Celeste´s talk • Electrical characterization I-V and CV • Imaging- waiting for bump bonding

  22. New Fabrication Run 8 wafers p-type 8 wafers n-type In Fabrication, due for the end of June 2008

  23. Thank you

More Related