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Tuning the hole mobility in InP semiconductor nanowires

Tuning the hole mobility in InP semiconductor nanowires. Temperature, strain, and width effects. Mariama Rebello Sousa Dias Victor Lopez-Richard Sergio E. Ulloa Adalberto Picinin Leonardo K. Castelano José Pedro Rino Gilmar E. Marques. Summary.

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Tuning the hole mobility in InP semiconductor nanowires

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  1. Tuning the hole mobility in InP semiconductor nanowires Temperature, strain, and width effects • MariamaRebello Sousa Dias • Victor Lopez-Richard • Sergio E. Ulloa AdalbertoPicinin LeonardoK. Castelano José Pedro Rino Gilmar E. Marques

  2. Summary • Temperature effects: Molecular dynamics simulations • Confinement and Strain effects: Valence band ground states • Width effects • Hole Mobility: width, strain, and temperature • Conclusions

  3. Temperature effects: MD simulations W 2 body interaction Potentials 3 body interaction

  4. Temperature effects: MD simulations W • Coulomb; • Steric repulsion; • Charge-induced dipole; • Van der Waals attraction. 2 body interaction Potentials Covalent character of the bonds (groups connected by In-P cohesive bond) 3 body interaction

  5. Temperature effects: MD simulations Phonon density of states: Shift to lower frequencies 2. Increase in the peak size

  6. Confinement and Strain effects

  7. Confinement and Strain effects E1 A1

  8. Confinement and Strain effects E2

  9. Confinement and Strain effects

  10. Hole-phonon interaction via deformation potential

  11. Hole-phonon interaction via deformation potential

  12. Hole-phonon interaction via deformation potential

  13. Hole-phonon interaction via deformation potential

  14. Hole mobility

  15. Hole mobility

  16. Hole mobility

  17. Conclusions • MD simulation: LO phonon peak position and lifetime are different for different temperatures. • Electronic structures changes with strain and/or size. • Hole mobility changes in a non-monotonic fashion. • Tuning parameters we can characterize a resonant behavior in the mobility. Thank you!

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