Synthesis and Applications of Semiconductor Nanowires - PowerPoint PPT Presentation

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Synthesis and Applications of Semiconductor Nanowires
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Synthesis and Applications of Semiconductor Nanowires

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  1. Nanoelectronics Synthesis and Applications of Semiconductor Nanowires Group 17 余承曄 F90943055 Graduate Institute of Electronics Engineering, NTU

  2. Outline Nanoelectronics • Synthesis of semiconductor nanowires • Electrical device • Optical device • Nanowire sensor Graduate Institute of Electronics Engineering, NTU

  3. Nanoelectronics Laser-assisted Catalytic Growth (LCG) Growth system : Nd-yttrium-aluminum-garnet laser (wavelength, 532 nm) Graduate Institute of Electronics Engineering, NTU

  4. Nanoelectronics Laser-assisted Catalytic Growth (LCG) Growth mechanism : • Vapor-liquid-solid (VLS) growth model • Catalyst : Fe, Ni, Au, … Graduate Institute of Electronics Engineering, NTU

  5. Nanoelectronics Laser-assisted Catalytic Growth (LCG) Si nanowires : Scale bar:100nm Scale bar:10nm Graduate Institute of Electronics Engineering, NTU

  6. Nanoelectronics Laser-assisted Catalytic Growth (LCG) Ge nanowires : Scale bar:9nm Scale bar:5nm Graduate Institute of Electronics Engineering, NTU

  7. Nanoelectronics Nanowire diameter control SiNW diameters grown from 5-, 10-, 20-, and 30-nm-diam Au nanoclusters. Graduate Institute of Electronics Engineering, NTU

  8. Solution-liquid-solid (SLS) Synthesis Nanoelectronics • Growth of InP, InAs, and GaAs (III-V) • Low-temperature ( ~203°C) • Potential limitation:catalyst must melt below the solvent boiling point Graduate Institute of Electronics Engineering, NTU

  9. Thermal evaporation method Nanoelectronics Experimental apparatus: • furnace; • (2)quartz tube; • (3)quartz cover; • (4)ceramic boat; • (5)pure silicon powder; • (6)iron-patterned silicon substrate. Graduate Institute of Electronics Engineering, NTU

  10. Nanoelectronics Thermal evaporation method Pre-patterned Fe on the growth surface No laser need Graduate Institute of Electronics Engineering, NTU

  11. Nanoelectronics Template-assisted Synthesis Process flow for preparing ordered nanowires with a template Graduate Institute of Electronics Engineering, NTU

  12. Nanoelectronics Template-assisted Synthesis Graduate Institute of Electronics Engineering, NTU

  13. Nanoelectronics low-temperature VLS method Ga using low-melting-point metals, such as Ga, In, and Bi, as the solvent SiHx(g)+xH(g) Ga-Si(l)+xH2(g) Ga–Si alloy is possible at temperatures as low as 100 °C. Graduate Institute of Electronics Engineering, NTU

  14. Nanoelectronics low-temperature VLS method nanowires with uniform diameters distributed around 6 nm using gallium as the molten solvent, at temperatures less than 400 °C in hydrogen plasma Graduate Institute of Electronics Engineering, NTU

  15. Nanoelectronics Nanowire superlattice Upon completion of the first growthstep, a different material (red) can be grown from the end of the nanowire. Repetition of steps leads to a compositional superlattice within a single nanowire. Graduate Institute of Electronics Engineering, NTU

  16. Nanoelectronics Nanowire superlattice GaAs/GaP nanowire junctions Scale bar:10nm Abrupt junction : • Nanowire diameter • Catalyst • Growth temperature Graduate Institute of Electronics Engineering, NTU

  17. Nanoelectronics Nanowire superlattice a 40-nm-diameter GaP(5)/GaAs(5)/GaP(5)/GaAs(5)/GaP(10)/GaAs(5)/GaP(20)/GaAs(5)/GaP(40)/GaAs(5)/GaP(5) superlattice Graduate Institute of Electronics Engineering, NTU

  18. Nanoelectronics Junction devices Graduate Institute of Electronics Engineering, NTU

  19. Nanoelectronics Bipolar Transistor Graduate Institute of Electronics Engineering, NTU

  20. Nanoelectronics Invertors Graduate Institute of Electronics Engineering, NTU

  21. Nanoelectronics PN junction & FETs Graduate Institute of Electronics Engineering, NTU

  22. Nanoelectronics Nano-logic gates Graduate Institute of Electronics Engineering, NTU

  23. Nanoelectronics Nanowire Computation Graduate Institute of Electronics Engineering, NTU

  24. Nanoelectronics Nanowire LEDs InP LED Graduate Institute of Electronics Engineering, NTU

  25. Nanoelectronics Nanowire LEDs 65(n)+68(p)nm Peak at 820nm 39(n)+49(p)nm Peak at 680nm Bulk bandgap of InP :925nm Graduate Institute of Electronics Engineering, NTU

  26. Nanoelectronics Nanowire Sensor for PH Detection Graduate Institute of Electronics Engineering, NTU

  27. Nanoelectronics Real-time detection of protein binding Graduate Institute of Electronics Engineering, NTU

  28. Real-time detection of reversible protein binding Nanoelectronics Graduate Institute of Electronics Engineering, NTU

  29. Nanoelectronics Real-time Detection of Ca2+ Ions Graduate Institute of Electronics Engineering, NTU

  30. References Nanoelectronics 1. A. M. Morales and C. M. Lieber, Science 279, 210 (1998). 2. M. S. Gudiksen et al., Nature 415, 617 (2002). 3. B. H. Hong et al., Science 294, 348 (2001). 4. T. Thurn-Albrecht et al., Science 290, 2126 (2000) 5. A. J. Yin et al., Applied Physics Letters 79, 1039 (2001). 6. M. Paulose et al., Applied Physics Letters 81, 153 (2002). 7. Y. Cui and C. M. Lieber, Science 291, 851 (2001). 8. Y. Huang et al., Science 294, 1313 (2001). 9. Y. Cui et al., Science 293, 1289 (2001). Graduate Institute of Electronics Engineering, NTU

  31. References Nanoelectronics 10. M. K. Sunkara et al., Applied Physics Letters 79, 1546 (2001). 11. T. J. Trentlor et al., Science 270, 1791 (1995) 12. Yi Cui et al., Applied Physics Letters 78, 2214 (2001). 13. Z. H. Wu et al., Applied Physics Letters 81, 5177 (2002). 14. Qian Gu et al., Applied Physics Letters 76, 3020 (2000). Graduate Institute of Electronics Engineering, NTU