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High-Power Semiconductor Devices Lecture Series

Explore power diodes, SCR Thyristors, GTOs, GCTs, and IGBTs in this graduate course by Dr. Bin Wu at Ryerson University. Topics cover device ratings, characteristics, and operation in high-power applications.

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High-Power Semiconductor Devices Lecture Series

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  1. Power Converter Systems Graduate Course EE8407 Bin Wu PhD, PEng Professor ELCE Department Ryerson University Contact Info Office: ENG328 Tel: (416) 979-5000 ext: 6484 Email: bwu@ee.ryerson.ca http://www.ee.ryerson.ca/~bwu/ Ryerson Campus

  2. Topic 2 High-Power Semiconductor Devices

  3. High-Power Semiconductor Devices Lecture Topics • Power Diode • SCR Thyristor • Gate Turn-Off Thyristor (GTO) • Integrated Gate Commutated Thyristor (GCT) • Insulated Gate Bipolar Transistor (IGBT) • Switch Series Operation

  4. High-Power Semiconductor Devices • Device Rating

  5. Power Diode 4500V/800A press pack and 1700V/1200A module diodes

  6. Power Diode • Heatsink Assembly • Press pack device: • Double sided cooling • Low assembly cost and high power density • Preferred choice for high voltage high power applications

  7. SCR Thyristor 4500V/800A and 4500V/1500A SCRs

  8. SCR Thyristor • Switching Characteristics

  9. SCR Thyristor • Main Specifications 12000V/1500A SCR Thyristor

  10. Gate Turn-Off (GTO) Thyristor 4500V/800A and 4500V/1500A GTOs

  11. Gate Turn-Off (GTO) Thyristor • Symmetrical versus Asymmetrical GTOs

  12. Gate Turn-Off (GTO) Thyristor • Switching Characteristics

  13. Gate Turn-Off (GTO) Thyristor • Main Specifications 4500V/4000A Asymmetrical GTO Thyristor

  14. Integrated Gate Commutated Thyristor (GCT) 6500V/1500A Symmetrical GCT GCT = Improved GTO + Integrated Gate + Anti-parallel Diode (optional)

  15. Integrated Gate Commutated Thyristor • GCT Classifications

  16. Integrated Gate Commutated Thyristor • Switching Characteristics

  17. Integrated Gate Commutated Thyristor • Main Specifications 6000V/6000A Asymmetrical GCT

  18. Insulated Gate Bipolar Transistor (IGBT) 1700V/1200A and 3300V/1200A IGBT modules

  19. Insulated Gate Bipolar Transistor (IGBT) • IGBT Characteristics Static V-I Characteristics Switching characteristics

  20. Insulated Gate Bipolar Transistor (IGBT) • Main Specifications 3300V/1200A IGBT

  21. Device Series Operation • Cause of Voltage Imbalance

  22. Device Series Operation • Equal Voltage Sharing • S1, S2, S3: • GTO, GCT or IGBT • Voltage Sharing: • v1 = v2 = v3in steady state • and transients • Static Voltage Sharing: • Rv • Dynamic Voltage Sharing: • RsandCs

  23. Device Series Operation • Active Overvoltage Clamping (AOC) • Suitable for series IGBTs • Not applicable to GCTs • Assumption: • S1 is turned off earlier than S2 • VCE1 is clamed to Vm due to • active clamping.

  24. Summary

  25. Thanks

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