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Design of RF CMOS Low Noise Amplifiers Using a Current Based MOSFET Model. Virgínia Helena Varotto Baroncini Oscar da Costa Gouveia Filho. OUTLINE. Introduction MOSFET Model High-Frequency Noise Model LNA Analysis LNA Design Example Conclusion. Introduction.

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design of rf cmos low noise amplifiers using a current based mosfet model

Design of RF CMOS Low Noise Amplifiers Using a Current Based MOSFET Model

Virgínia Helena Varotto Baroncini

Oscar da Costa Gouveia Filho

outline
OUTLINE
  • Introduction
  • MOSFET Model
  • High-Frequency Noise Model
  • LNA Analysis
  • LNA Design Example
  • Conclusion
introduction
Introduction
  • Submicrometer CMOS technology allows the integration of RF circuits.
  • Low voltage and low power operation → moderate inversion
  • Model valid from weak to strong inversion
mosfet model

D

I(VG,VS)

G

I(VG,VD)

B

S

MOSFET MODEL

IF= forward current

IR= reverse current

slide5

where

are the normalized currents

Normalized currents

and

is the normalization current

operation regions of the mos transistor

ir

103

strong

102

triode

moderate

reverse saturation

ir > 100 if

forward saturation

if > 100 ir

100

weak

10-1

moderate

strong

weak

10-3

10-3

10-11

100

102

103

if

Operation Regions of the MOS transistor
slide7

Small signal parameters

Transconductances

Capacitances

high frequency noise model

Rg

D

gmVgb

G

gmsVsb

SvRg

Cgb

Sig

Cgs

Sid

S

S

B

B

High- Frequency Noise Model
channel thermal noise

10-23

10-24

10-25

10-26

Sid (A2/Hz)

10-27

10-28

10-29

10-3

10-1

100

101

103

10-2

102

if

Channel Thermal Noise
lna analysis

VDD

Ld

Vb

M2

Vin

M1

Lg

LS

LNA Analysis

Cascode LNA with inductive source degeneration

impedance matching

Lg

Cgb

Cgs

gmbVsb

Zin

gmsVgs

Z1

Ls

Impedance Matching

Z1 can be viewed as the parallel of a resistor R with the capacitance Cgs

slide14

Simplified small signal model for the LNA

matching is achieved simply by making the real part of Zin equal to the source resistance and its imaginary part equal to zero.

noise figure
Noise Figure

Definition

LNA small-signal model for noise calculations

The noise figure can be expressed as a function of if

lna design example
LNA Design Example

LNA Design Parameters

slide20

3. Transistor width for minimum noise figure

Noise figure versus W/L for several inversion levels at 2.5 GHz

slide21

4. Lg to satisfy the resonance frequency

5. Ld to adjust the gain and the output resonance frequency

lna design results

RLd

Ld

Vout

M1

RS

CL

M2

Lg

Vin +Vbias

Ls

LNA Design Results

VDD

slide23

Simulation results

Input impedance

conclusions
Conclusions
  • The main advantage of this methodology is that is valid in all regions of the operation of the MOS transistors;
  • It is possible to move the operation point of RF devices from strong inversion to moderate inversion taking advantage of higher gm/ID ratio, without degrading the noise figure;