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CMOS Analog Design Using All-region MOSFET Modeling. Chapter 4 Temporal and spatial fluctuations in MOSFETs. Noise and mismatch.

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cmos analog design using all region mosfet modeling
CMOS Analog Design Using All-region MOSFET Modeling

Chapter 4

Temporal and spatial fluctuations in MOSFETs

CMOS Analog Design Using All-Region MOSFET Modeling

noise and mismatch
Noise and mismatch

The spontaneous fluctuations over time of the current and voltage inside a device, which are basically related to the discrete nature of electrical charge, are called electrical noise.

Time-independent variations between identically designed devices in an integrated circuit due to the spatial fluctuations in the technological parameters and geometries are called mismatch.

Mismatch (spatial fluctuation) and noise (temporal fluctuation) are similar phenomena, both depending on process, device dimensions, and bias.

Mismatch can be seen as “dc noise”.

CMOS Analog Design Using All-Region MOSFET Modeling

types of noise thermal noise
Types of noise: Thermal noise

(a) Norton and (b) Thevenin equivalent circuits of a real (noisy) resistor. The resistor in the equivalent circuits is an ideal (noiseless) resistor.

Nyquist formulas

k=1.38·10-23 J/K is the Boltzmann constant and f is the bandwidth in Hertz over which the noise is measured

R

G = 1/R

(a)

(b)

+

CMOS Analog Design Using All-Region MOSFET Modeling

thermal noise calculation
Thermal noise calculation

On the other hand, the rms value of the thermal noise

voltage per Hz1/2 is

CMOS Analog Design Using All-Region MOSFET Modeling

Calculate the rms (root mean square) value of the thermal noise current per Hz1/2 of a 1 mA/V conductance at T= 300 K.

consistency of noise models
Consistency of noise models

R1

R2

+

+

CMOS Analog Design Using All-Region MOSFET Modeling

A noise model is consistent regarding series or parallel associations if the composition of the noise contributions from the individual series (or parallel) elements is the same as the noise from the series (or parallel) equivalent.

The thermal noise model for a resistor given by

is consistent

The total noise voltage introduced into the circuit can be obtained by composing the individual noise sources or using Nyquist formula to calculate the noise of the equivalent resistor Req=R1+R2.

shot noise vacuum tubes diodes and bipolar transistors
Shot noise (vacuum tubes, diodes, and bipolar transistors)

The rms value of the shot noise per Hz1/2 in a p-n junction diode

for a 1 A dc current is

CMOS Analog Design Using All-Region MOSFET Modeling

Shot noise is associated with the random flow of carriers across a potential barrier.

The fluctuation of a current I around its average value IDC

Shot noise is given by the Schottky formula as

q is the electronic charge and f is the bandwidth in Hertz

flicker 1 f noise
Flicker (1/f)noise

All active devices, and some passive devices such as carbon resistors, present excess noise at low frequencies, which is called flicker noise.

Flicker noise occurs when a direct current is flowing: flicker noise can be regarded as produced by a fluctuation in conductance.

The power spectral density of flicker noise varies with frequency in the form

with K and EF being constants. Since in most cases EF1, flicker noise is also called 1/f noise.

CMOS Analog Design Using All-Region MOSFET Modeling

calculation of flicker noise
Calculation of flicker noise

CMOS Analog Design Using All-Region MOSFET Modeling

Assume that EF = 1 and K=10-20 A2. Calculate the mean square value of the flicker noise current over a frequency range of (a) [10 Hz, 10 kHz]; (b) [10 Hz, 10 MHz]; (c) [(1 (million year)-1, 1 year-1]

which leads to the following results

a)

b)

c)

modeling drain current fluctuations 1
Modeling drain current fluctuations - 1

Channel splitting

Transistor equivalent circuit

Mu: W/(L-y)

R

Ml: W/y

VD

VG

L-y

A

y

L

y

W

CMOS Analog Design Using All-Region MOSFET Modeling

slide10

Modeling drain current fluctuations - 2

Current division

CMOS Analog Design Using All-Region MOSFET Modeling

mosfet thermal noise
MOSFET thermal noise

CMOS Analog Design Using All-Region MOSFET Modeling

Conductance of a MOSFET channel element

Mean-square thermal noise of the channel element

Nyquist

Mean-square value of the total drain current fluctuation

thermal noise excess factor 1
Thermal noise excess factor - 1

CMOS Analog Design Using All-Region MOSFET Modeling

For VDS0, the transistor is equivalent to a resistor and

where gms (=gmd) is the equivalent conductance of the transistor

In weak inversion

For a saturated transistor (gms>>gmd) in weak inversion

slide13

Thermal noise excess factor - 2

CMOS Analog Design Using All-Region MOSFET Modeling

In general, the channel thermal noise is written as

  • is named the excess noise factor and its value is 2/3 for a long-channel saturated transistor in strong inversion.

For a short channel transistor

Le and Lesat are the electrical channel length in the linear and the saturation regions, respectively. Considering that Lesat= Le-L, where L is the channel shortening due to CLM, then

for short channel transistors it is possible that >1 due to the CLM effect.

flicker noise in mosfets
Flicker noise in MOSFETs

Spectral density of a simulated waveform obtained superimposing many random telegraph signals with single time constants having values generated according to

CMOS Analog Design Using All-Region MOSFET Modeling

slide15

Flicker (1/f) noise model

As for thermal noise, we calculate the mean-square value of the total drain current fluctuation from the local current fluctuation in the channel

: effective number of traps/area

In terms of inversion levels

CMOS Analog Design Using All-Region MOSFET Modeling

dependence of the 1 f noise on bias
Dependence of the 1/f noise on bias

CMOS Analog Design Using All-Region MOSFET Modeling

thermal and 1 f noise
Normalized flicker and thermal PSD at f=1kHz for saturated NMOS-T (W/L=200/5)Thermal and 1/f noise

1E-9

7

-2

(N

=2.6x10

cm

)

ot

1E-10

1E-11

2

1E-12

D

1/f Noise

/I

ID

S

(a)

Simulated

Thermal Noise

1E-13

(b)

Simulated

Simulated

(Typ.NMOS model)

measured

1E-14

measured

1E-15

10n

100n

10µ

100µ

1m

10m

[A]

Drain Current

CMOS Analog Design Using All-Region MOSFET Modeling

corner frequency
Corner frequency

Noise corner frequency (frequency at which the PSD of the 1/f noise equals the PSD of the thermal noise) can be expressed in terms of MOSFET transition frequency

CMOS Analog Design Using All-Region MOSFET Modeling

systematic and random mismatch
Systematic and random mismatch

CMOS Analog Design Using All-Region MOSFET Modeling

Mismatch is the name given to the time-independent differences between identically designed and identically used devices.

The performance of most analog, or even digital, circuits relies on the concept of matched behavior between identically designed and used devices.

In analog circuits, unwanted differences in the effective value of equally designed components, such as threshold voltage differences of millivolts or less, can critically reduce the performance and/or yield of a circuit.

Even for digital circuits, transistor mismatch can lead to propagation delay differences in clock trees, reducing the robustness of the circuit.

The shrinkage of the MOSFET dimensions and the reduction in the supply voltage make matching limitations even more important.

global manufacturing variations
Global manufacturing variations

GLOBAL variation  total variation of a parameter over a chip, a wafer (a batch) caused by equipment variations & spatial drift, e. g.

Dimensional errors (photo-mask sizes, lens aberrations)

Photo-resist thickness variations

Mechanical strain variation

Because GLOBAL variations are correlated across die, they are minimized by design tricks:

common centroid components

distance reduction between identically designed pairs

same orientation, etc.

CMOS Analog Design Using All-Region MOSFET Modeling

random local variations
Random local variations

LOCAL variation  variation in a component with respect to an identical adjacent component, caused by atomistic stochastic effects

ion implantation, dopant diffusion and clustering

Interface states, fixed charges

edge roughness, poly-Si grain effects

Simulation: generate random mismatch that depends on dimensions, process parameters, and bias.

Designers must understand the limitations imposed by LOCAL variations on performance.

CMOS Analog Design Using All-Region MOSFET Modeling

pelgrom s model of mismatch 1
Pelgrom’s model of mismatch - 1

W

source

L

xd

drain

CMOS Analog Design Using All-Region MOSFET Modeling

number of atoms per unit volume in silicon is NSi=5·1022 cm-3

probability p of having an acceptor atom in the place of a silicon atom

number N of crystal atoms in the depletion region under the gate

fluctuation in the number of acceptor atoms under the gate of an n-channel transistor (binomial distribution)

since p<<1(Poisson distribution)

slide23

Pelgrom’s model of mismatch - 2

CMOS Analog Design Using All-Region MOSFET Modeling

In most applications: standard deviation of the difference between the threshold voltages of two identical transistors (VT0=VT1-VT2)

slide24

Pelgrom’s model of mismatch - 3

The standard deviation of the n-channel MOSFET threshold voltage vs. the inverse square root of the gate area for a .18 m process

CMOS Analog Design Using All-Region MOSFET Modeling

vto matching coefficient vs process
VTO matching coefficient vs. process

The threshold-voltage matching coefficient over process generations

CMOS Analog Design Using All-Region MOSFET Modeling

number fluctuation mismatch model 1
Number fluctuation mismatch model - 1

inversion charge

y

depletion charge

y

0

VGB

p-substrate

Cross section of an MOS transistor showing the (greatly exaggerated) fluctuations in both inversion and depletion charge densities due to local dopant fluctuations

CMOS Analog Design Using All-Region MOSFET Modeling

slide27

Number fluctuation mismatch model - 2

  • Assumptions and/or approximations:
  • The capacitive model of the MOS transistor, assuming the depletion capacitance to be dependent on the gate voltage only and the inversion capacitance to be proportional to the inversion charge density;
  • The fluctuation of the impurity concentration in the depletion layer as the main source of mismatch;
  • Poisson distribution of impurity atoms;
  • Uncorrelated local impurity fluctuations;

Noi: effective number of impurities per unit area of gate

CMOS Analog Design Using All-Region MOSFET Modeling

mismatch dependence on inversion level 1
Mismatch dependence on inversion level - 1

In terms of inversion levels

where

_______________________

For long channel MOSFET

CMOS Analog Design Using All-Region MOSFET Modeling

slide29

Mismatch dependence on inversion level - 2

CMOS Analog Design Using All-Region MOSFET Modeling

mismatch model including i s fluctuations
Mismatch model including IS fluctuations

One can include the random errors due to the specific sheet current

AISH is the parameter which accounts for mismatch in ISH.

For high inversion levels, mismatch levels out at a minimum value determined by AISH

AISH values are of the order of 1 %-m

CMOS Analog Design Using All-Region MOSFET Modeling

mismatch experimental results 1
Mismatch: Experimental results – 1

VG

VD

IB

ID

MREF

Mi

VB

Saturation level dependence

Measured: —; Model: ---

Test chip: 24 NMOS transistors (W=30m, L= 1.2m)in the ES2 1.2m CMOS DLM process

CMOS Analog Design Using All-Region MOSFET Modeling

Test circuit

slide32

Mismatch: Experimental results – 2

Dependence on inversion level

Linear:  (VDS=50mV); Saturation:  (VDS=1V) regions. —; Model

CMOS Analog Design Using All-Region MOSFET Modeling