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iSIGHT Applications in Electronics Industry. iSIGHT Customers in Electronics. Advanced Institute of Technology and Science(J) Aisin Black & Decker Canon Delphi Packard Electric Denso Emerson Motor Fuji XEROX Fujitsu General Electric Hitachi Kyocera. Matsushita/Panasonic

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Presentation Transcript
isight customers in electronics
iSIGHT Customers in Electronics
  • Advanced Institute of

Technology and Science(J)

  • Aisin
  • Black & Decker
  • Canon
  • Delphi Packard Electric
  • Denso
  • Emerson Motor
  • Fuji XEROX
  • Fujitsu
  • General Electric
  • Hitachi
  • Kyocera
  • Matsushita/Panasonic
  • Mitsubishi Electric
  • Motorola
  • NEC
  • Ricoh
  • Samsung
  • Sanyo
  • Sharp
  • Sony
  • Toshiba
  • XEROX

etc.

applications in electronics industry
Applications in Electronics Industry
  • Heat Exchange Unit Optimization
  • Halogen-IR Lamp Design Space
  • Power Converter Weight Reduction
  • 3D Coil and Magnetic Field for controlling Deflection Yoke of CRT
  • 3D Coil and Magnetic Field for controlling Electron Beam Orbit of Flat TV
  • Rubber Switch Optimization
  • Latch Bracket Shape Optimization Plastic Injection Molding Optimization
  • Plastic Injection - Structure Analysis MDO
  • Semiconductor Circuit Design Optimization
  • LCD Circuit Design Optimization
  • Robust Design for coating materials of semiconductor
  • ECU Design & Controlling Optimization
  • Refrigerator Internal Flow for minimizing Electric Power Consumption
  • Air Conditioning System Optimization
  • Vacuum Cleaner Intake Mechanism for maximum Inhalation with minimum Electric Power Consumption
  • No Exhaust Vacuum Cleaner
  • Laundry Machine Structure for minimizing Vibration and Noise
  • IH Rice Cooker Magnetic Field Optimization
automation integration of eda process in semiconductor design
Automation & Integration of EDA Process in Semiconductor Design

Automation & Integration

Mask

Layout

Functionality

Simulation

Shape

Simulation

Process

Simulation

Logic

Synthesis

Latency Information

Logic

Simulation

Device

Simulation

IC Test

Parameter of

Device Characteristics

Failure

Information

Failure

Simulation

Circuit

Simulation

Failure

Analysis

Failure

Dictionary

Mask Layout

& Testing

Device Design

IC Design

automation integration of eda process in system design
Automation & Integration of EDA Process in System Design

Automation/Integration/Optimization

Software

Design

Prototype

Test

Analog

Simulation

Digital

Simulation

Physical System

Test

PCB Positioning

& Wiring

Failure

Information

Reliability

Testing

Failure

Analysis

I/O Design

System Design & Testing

PCB Design

slide6

Design Improvement

  • Threshold Voltage (Vth) Deviation
  • 0.08 -->
  • SN Ratio Improvement:
  • 25.7db --> 34.6db
  • 0.03

Hitachi Semiconductor Group:

Robust Design of MOS Devices:DOE based TCAD Simulation

Objective

Yield Improvement Time Reduction of New Devices

TCAD

Calibration

Requiring Robust Design of MOS

Prototyping

Robust Design

Error Factor Compounding

Issues

Requiring Multi Variables Optimization

DOE Process

Calibration of Device Simulator

Robust Design of MOS Devices

Parametric Optimization

Design Environment of MOS Devices

Design Cycle Reduction

3 Month (Traditional Method)

--> 3 Weeks (Manual DOE/Taguchi Method)

--> 3 Days (Automated DOE and Optimization by iSIGHT)

slide7

Hitachi Semiconductor Group:

Robust Design of MOS Devices:DOE based TCAD Simulation

Gate

Electrode

Drain

Electrode

Source

Electrode

N

N

Id

P

Si Board

MOS Device Concept(NMOS )

Model Parameter

Model Parameter

(Process)

(Device)

Impurities

Distribution

Device

Characteristics

Device

Simulation

Process

Simulation

Process Flow

Process Device Simulation

slide8

SAIT (Samsung Advanced Institute & Technology)

■ MEMS Switching Device Design

  • Problem Definition
    • 4 D.V.s for the membrane geometry
    • Must consider unwanted effects in manufacturing process
    • Minimize the actuation voltage of switch and maximize the recovery force
    • Highly non-linear property in relation between voltage and gap

Switch On

Switch Off

slide9

SAIT (Samsung Advanced Institute & Technology)

■ Process to Design

  • Maintask
    • Input 4 geometric design variables to Ansys for modeling
    • This model is provided for analysis of actuation voltage
  • Subtask
    • From the geometry model and unwanted effects data, Abaqus and in-house codes calculate the gap based on the voltage input and check the membrane is contacted or not.

Due to the long running of Abaqus

the actuation voltage must be found under 10 iterations in subtask by applying an optimization algorithm in a program.

Traditional gradient based optimization algorithms do not work because it’s very highly non-linear.

slide10

SAIT (Samsung Advanced Institute & Technology)

■ Simulation of problem

  • Made simple simulation model of the actuation voltage problem by using Excel Interface
  • Hooke-Jeeves algorithm is good for this problem
slide11

SAIT (Samsung Advanced Institute & Technology)

■ RSM Model

  • Built RSM model by applying DOE in main task and finding the actuation voltage in subtask
  • Tried to find minimized value
  • Tried to analyze uncertainties in manufacturing process by applying MCS for the minima