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iSIGHT Applications in Electronics Industry

iSIGHT Applications in Electronics Industry. iSIGHT Customers in Electronics. Advanced Institute of Technology and Science(J) Aisin Black & Decker Canon Delphi Packard Electric Denso Emerson Motor Fuji XEROX Fujitsu General Electric Hitachi Kyocera. Matsushita/Panasonic

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iSIGHT Applications in Electronics Industry

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  1. iSIGHT Applications inElectronics Industry

  2. iSIGHT Customers in Electronics • Advanced Institute of Technology and Science(J) • Aisin • Black & Decker • Canon • Delphi Packard Electric • Denso • Emerson Motor • Fuji XEROX • Fujitsu • General Electric • Hitachi • Kyocera • Matsushita/Panasonic • Mitsubishi Electric • Motorola • NEC • Ricoh • Samsung • Sanyo • Sharp • Sony • Toshiba • XEROX etc.

  3. Applications in Electronics Industry • Heat Exchange Unit Optimization • Halogen-IR Lamp Design Space • Power Converter Weight Reduction • 3D Coil and Magnetic Field for controlling Deflection Yoke of CRT • 3D Coil and Magnetic Field for controlling Electron Beam Orbit of Flat TV • Rubber Switch Optimization • Latch Bracket Shape Optimization Plastic Injection Molding Optimization • Plastic Injection - Structure Analysis MDO • Semiconductor Circuit Design Optimization • LCD Circuit Design Optimization • Robust Design for coating materials of semiconductor • ECU Design & Controlling Optimization • Refrigerator Internal Flow for minimizing Electric Power Consumption • Air Conditioning System Optimization • Vacuum Cleaner Intake Mechanism for maximum Inhalation with minimum Electric Power Consumption • No Exhaust Vacuum Cleaner • Laundry Machine Structure for minimizing Vibration and Noise • IH Rice Cooker Magnetic Field Optimization

  4. Automation & Integration of EDA Process in Semiconductor Design Automation & Integration Mask Layout Functionality Simulation Shape Simulation Process Simulation Logic Synthesis Latency Information Logic Simulation Device Simulation IC Test Parameter of Device Characteristics Failure Information Failure Simulation Circuit Simulation Failure Analysis Failure Dictionary Mask Layout & Testing Device Design IC Design

  5. Automation & Integration of EDA Process in System Design Automation/Integration/Optimization Software Design Prototype Test Analog Simulation Digital Simulation Physical System Test PCB Positioning & Wiring Failure Information Reliability Testing Failure Analysis I/O Design System Design & Testing PCB Design

  6. Design Improvement • Threshold Voltage (Vth) Deviation • 0.08 --> • SN Ratio Improvement: • 25.7db --> 34.6db • 0.03 Hitachi Semiconductor Group： Robust Design of MOS Devices：DOE based TCAD Simulation Objective Yield Improvement Time Reduction of New Devices TCAD Calibration Requiring Robust Design of MOS Prototyping Robust Design Error Factor Compounding Issues Requiring Multi Variables Optimization DOE Process Calibration of Device Simulator Robust Design of MOS Devices Parametric Optimization Design Environment of MOS Devices Design Cycle Reduction 3 Month (Traditional Method) --> 3 Weeks (Manual DOE/Taguchi Method) --> 3 Days (Automated DOE and Optimization by iSIGHT)

  7. Hitachi Semiconductor Group： Robust Design of MOS Devices：DOE based TCAD Simulation Gate Electrode ○ Drain Electrode Source Electrode ○ ○ N N Id P Si Board MOS Device Concept（NMOS ） Model Parameter Model Parameter （Process） （Device） Impurities Distribution Device Characteristics Device Simulation Process Simulation Process Flow Process Device Simulation

  8. SAIT (Samsung Advanced Institute & Technology) ■ MEMS Switching Device Design • Problem Definition • 4 D.V.s for the membrane geometry • Must consider unwanted effects in manufacturing process • Minimize the actuation voltage of switch and maximize the recovery force • Highly non-linear property in relation between voltage and gap Switch On Switch Off

  9. SAIT (Samsung Advanced Institute & Technology) ■ Process to Design • Maintask • Input 4 geometric design variables to Ansys for modeling • This model is provided for analysis of actuation voltage • Subtask • From the geometry model and unwanted effects data, Abaqus and in-house codes calculate the gap based on the voltage input and check the membrane is contacted or not. Due to the long running of Abaqus the actuation voltage must be found under 10 iterations in subtask by applying an optimization algorithm in a program. Traditional gradient based optimization algorithms do not work because it’s very highly non-linear.

  10. SAIT (Samsung Advanced Institute & Technology) ■ Simulation of problem • Made simple simulation model of the actuation voltage problem by using Excel Interface • Hooke-Jeeves algorithm is good for this problem

  11. SAIT (Samsung Advanced Institute & Technology) ■ RSM Model • Built RSM model by applying DOE in main task and finding the actuation voltage in subtask • Tried to find minimized value • Tried to analyze uncertainties in manufacturing process by applying MCS for the minima

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