1 / 13

A 10 Gb/s Photonic Modulator and WDM MUX/DEMUX Integrated with Electronics in 0.13um SOI CMOS

A 10 Gb/s Photonic Modulator and WDM MUX/DEMUX Integrated with Electronics in 0.13um SOI CMOS. High Speed Circuits & Systems Laboratory Joungwook Moon 2011. 5.25. 1. Introduction. 2. Implementation. 3. Conclusion. Contents. Introduction. Author :Andrew Huang. Luxtera, Carlsbad, CA

gates
Download Presentation

A 10 Gb/s Photonic Modulator and WDM MUX/DEMUX Integrated with Electronics in 0.13um SOI CMOS

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. A 10 Gb/s Photonic Modulator and WDM MUX/DEMUX Integrated with Electronics in 0.13um SOI CMOS High Speed Circuits & Systems Laboratory Joungwook Moon 2011. 5.25

  2. 1. Introduction 2. Implementation 3. Conclusion Contents

  3. Introduction • Author :Andrew Huang. Luxtera, Carlsbad, CA (ISSCC 2006) • Manufacturable yield-frendly photonics components combined with electronics using a 0.13um SOI process for PowerPC processors • A 10Gb/s optical modulator integrated with a driver and 4-channel WDM MUX/DEMUX w/ integrated tuning circuits • WDM MUX/DEMUX(Wavelength division multiplexing) : To increase capacity and speed of commucation, different kind of data put into a single fiber. An optical fiber can carry maximum 80 wavelength of data.

  4. Implementation - Waveguide • C-band (1.5um) optical waveguides are formed by a high reflective index core of transparent silicon& low reflective index index silicon dioxide • C-band (conventional wavelength band) :1530nm ~ 1565nm Waveguide structure & Optical profile @ Ref.[2] Wavelength Band

  5. Holographic Lens • Holographic lens(HL) couples light normal to the surface of the die with < 1.5dB loss • HL allows inexpensive wafer scale testability (Good replacement for the refract- -ing lens in maching application) 10um fiber core Holographic lens waveguides SEM photograph of a holographc lens

  6. Modulator (1) • Modulator uses a free-carrier-effect-based device in a Mach-Zender interferometer • Light is split evenly into two arms. • The light is phase-modulated. • Differential accumulation of phase(ΔΦ)causes • the recombined light to interefer. • P= 0.5 + cos(∏/2 + ΔΦ)/2 • A reverse-biased lateral • PIN diode • (contrast to conventional method based on diffusion/recombination) • The speed of the resulting • device is limited by RLC Schematic diagram of a phase modulator in one arm of the MZI

  7. Modulator (2) • In a lumped configuration, junction length needed for sufficient phase shift would be parastic-limited to < 10Gb/s • To overcome this lumped-RC speed limit is to design a travelingwave electrode. (designed as a part of the microwave transmission line) • On chip terminations are integrated at the end of the microwave transmission lines to supperss back-relfections • The characteristic impedance of the transmission line + PN diode : Total system impedance = 25Ω • The modulator has a length of 2mm, microwave loss would be sufficiently small

  8. Integrated Driver • A cascoded thin-gate-oxide transister swich is used • Pre-driver chain drives the switch transistor • Cascode device is used to shield the high-performance switch from the relatively high voltages required by the modulator elements • The active area for the modulator driver is 0.08mm2 • Total area is 2.6mm2 including 2mm modulator, termination network, and pads Integrated driver connected to one MZI arm CMOS optical modulator with Differential Driver

  9. Integrated Driver • A cascoded thin-gate-oxide transister swich is used • Pre-driver chain drivesthe switch transistor • Cascode device is used to shield the high-performance switch from the relatively high voltages required by the modulator elements • The integrated circuit yields • a 10-12 BER with a 223-1 PRBS • at 10Gb/s. • Performance of the optical modulator is entirely limited by the driver Optical eye of integrated modulator plus driver at 10Gb/s

  10. 4-Channel DWDM AWG (1) • A Key Advantage of integrated electronics and photonics on a single chip is to raise yield of an optical device by electronic control ciucuitry • Optical 4-channel DWDM AWG with an 8b DAC array is integrated (< 0.6mm2) • DWDM: Dense Wavelength Division Multiplexing • AWG: Arrayed waveguide grating • generate a desired spectral function Electrically Tunable AWG Die shot of DAC array plus AWG element

  11. 4-Channel DWDM AWG (2) • Forward-biased PIN junction phase Modulators integrated into each arm of the AWG.  offer great phase efficiency (90°/mA for 100um arm) but lower speed & higher loss • Each modulator is driven by an 8b 5/3 segmented DAC to restore phase relationship (inducing random delay) • After tuning, the crosstalk suppression is improved by over 16db

  12. Luxtera CMOS Photonic Tech. from Luxtera (www.luxtera.com)

  13. Conclusion • Abstract • Motolithic integration of both photonic and electronic components operating at 10Gb/s in a 0.13um SOI CMOS process • A modulator uses free carrier plasma dispersion in a reverse-biased PIN optical phase shifer in a Mach-Zender interferometer. • An AWG demultiplexer uses a forward-biased PIN phase shifter to compensate the optical path length improving the channel separation

More Related