Atlas upgrade integrated silicon strip hybrid
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Cu/Ti layer (1 μ m). Passivation (3-4 μ m BCB). 4 μ m Ni + 150 nm Au. Via etched opening in BCB (45 º) coated with Cu/Ti. BCB (6 or 12 μ m) (dielectric). Passivation (SiO 2 ). Al strip. SiO 2. Si bulk. implant. Cross-section of first prototype run:

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Atlas upgrade integrated silicon strip hybrid

Cu/Ti layer

(1 μm)

Passivation

(3-4 μm BCB)

4 μm Ni +

150 nm Au

  • Via

  • etched opening in BCB (45 º)

  • coated with Cu/Ti

BCB (6 or 12 μm)

(dielectric)

Passivation (SiO2)

Al strip

SiO2

Si bulk

implant

Cross-section of first prototype run:

The first layer of a fully functional hybrid

First processing run to investigate influence on the sensor and evaluate technology

  • Results and outlook

  • Sensor characteristics largely unchanged

  • Increase in capacitive load as expected

  • Irradiation studies to follow

  • Next step: fully functional thin film hybrid

ATLAS UpgradeIntegrated silicon-strip hybrid

Research performed in WP4 of the ATLAS UK Upgrade programme

Multi-Chip Module – Deposited (MCMD)

Build dielectric & metal layers on the silicon sensor

Etched connections to sensor and between layers

Replaces FE hybrid, pitch-adaptor and substrate

Reduces material and increases integration