Formation of Phase Change Materials with a Wide Range of Compositions using E-ALD John L. Stickney, University of Georgia Research Foundation Inc, DMR 1006747. Electrochemical atomic layer deposition
Electrochemical atomic layer deposition
(E-ALD) is a method for forming materials an atomic layer at a time. I was invented by the PI, and is being developed as a methodology for forming materials with atomic layer control.
To grow materials conformally on nano structured surfaces requires significant control over the deposit. E-ALD it was felt, had the degree of flexibility needed.
These materials have two structures, crystalline and amorphous. The two structures have different optical and electronic properties. Conversion between the two states requires heating, which can be applied by a laser, or use of a current to heat.
Nanometer sized deposits can be converted between states, so that he material can be used as a new form of electronic memory.
GexSbyTez nanofilms of various
Compositions were formed using
Electrochemical Atomic Layer
Professor Daniel Scherson (Case Western Reserve) and the P.I. organized the 12th International Conference on Electrified Interfaces (ICEI), at Hobart and William Smith Colleges, in Geneva NY, June 20th through the 25th, 2010. This meeting is held every three years, in different countries around the world.
The conference brought together a wide range of scientists from around the world to discuss the latest research concerned with reactions at electrified interfaces. The conference included a large number of students giving posters, as well as a broad range of invited speakers. The scope of the meeting included theory and experiment on a broad range of topics.