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High Temperature, Silicon Carbide, Power MOSFET. S mall B usiness I nnovation R esearch. Cree Research, Inc. Durham, NC. INNOVATION. A process for producing high performance power metal/oxide semiconductor field-effect transistors (MOSFETs) in Silicon Carbide (SiC). ACCOMPLISHMENTS

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slide1

High Temperature, Silicon Carbide,

Power MOSFET

Small

Business

Innovation

Research

Cree Research, Inc.

Durham, NC

INNOVATION

A process for producing high performance power metal/oxide semiconductor field-effect transistors (MOSFETs) in Silicon Carbide (SiC)

  • ACCOMPLISHMENTS
  • Demonstrated the first vertical power MOSFET in SiC
  • Fabricated a high-performance MOSFETs in SiC that can operate up to 300°C
  • Received Patent on this technology
  • COMMERCIALIZATION
  • Increased SiC material and device sales by >$3M
  • Created 12 new jobs and saved existing jobs
  • Initiated tremendous worldwide interest in the area of SiC power semiconductors, resulting in multi-$M programs in SiC MOSFETs for government and commercial labs
  • Total market potential for SiC Power MOSFETs would be >$2B

Cross-Section of a SiC Power MOSFET

  • GOVERNMENT/SCIENCE APPLICATIONS
  • Will be used in aircraft engines
  • Applicable for high temperature electronics in space craft and will reduce weight and size of spacecraft
  • Can be used to replace Silicon power devices in power circuits for electric motors and power control, for electric vehicles, robotics, and power supplies
  • SiC MOSFETs offer much higher efficiencies than silicon in these applications. Potential power savings of >$1B/yr are possible

Lewis Research Center

Instrumentation and Controls

3-021

1988 Phase II, NAS3-25956 , 9/98

NASA Contact - Lawrence Matus

Company Contact - John Palmour

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