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Carbon Nanotubes in Diodes: Properties and Fabrication Process

Explore the benefits of carbon nanotubes (CNTs) in diodes, their fabrication process, properties of SWNT networks, current rectification capabilities, and gate voltage characterization.

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Carbon Nanotubes in Diodes: Properties and Fabrication Process

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  1. Diodes Properties of SWNT NetworksBryan Hicks

  2. Diodes and Transistors An ever increasing number in an ever decreasing area

  3. Why Carbon Nanotubes? • Ballistic transport –Low power • No chemical passivation necessary allows for a variety of different insulators • Current densities of 109 A/cm2 vs. 103 A/cm2 for silicon • Huge mobility for high speed devices • Can be semi-conducting or metallic

  4. Carbon Nanotube Networks • Random networks of tubes • Low resistance at CNT junctions • No processing necessary • 1/3 metallic 2/3 semiconducting • Have properties of both metals and semiconductors

  5. Fabrication Process • Deposit Al and Au electrodes on to a Si02/Si chip with SWNT networks • Wire bond the electrodes to a chip carrier

  6. Actual Devices

  7. Current Rectification Properties Maximum Current Capacities: Device 1: 8 μA & Device 2: 22 μA On/off ratios: Device 1: 20 & Device 2: 5

  8. Current Rectification Properties Maximum Current Capacities: 678.9 μA On/off ratios: 27

  9. Current Rectification Properties Maximum Current Capacities: 840 μA On/off ratios: 108

  10. Current Rectification Properties Maximum Current Capacities: 840 μA On/off ratios: ??

  11. Gate Voltage Characterization • Current decreases as carriers are removed • Current increases as carriers are introduced • The hysteresis seen is due to trapping seen in other CNT transistors as well

  12. Summary • Carbon Nanotube Networks present an economic way to incorporate CNT properties into macroelectronics • Current Rectification seems to be a product of contact resistance and is often lost when various scans are made.

  13. Sources • C. Lu, L. An, Q. Fu, J. Liua, H. Zhang and J. Murduck. Appl. Phys. Lett. 88, 133501 (2006) • P. Avouris, J. Appenzeller, Richard Martel, And S. J. Wind. Proceedings of the IEEE. 91, 11 (2003)

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