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ITRS Public Conference Emerging Research Devices. 2011 ERD Chapter. Jim Hutchby – SRC July 13, 2011. Emerging Research Devices Working Group. Hiroyugi Akinaga AIST Tetsuya Asai Hokkaido U. Yuji Awano Keio U. George Bourianoff Intel Michel Brillouet CEA/LETI

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itrs public conference emerging research devices

ITRS Public ConferenceEmerging Research Devices

2011 ERD Chapter

Jim Hutchby – SRC

July 13, 2011

emerging research devices working group
Emerging Research Devices Working Group
  • Hiroyugi Akinaga AIST
  • Tetsuya Asai Hokkaido U.
  • Yuji Awano Keio U.
  • George Bourianoff Intel
  • Michel Brillouet CEA/LETI
  • Joe Brewer U. Florida
  • John Carruthers PSU
  • Ralph Cavin SRC
  • An Chen GLFOUNDRIES
  • U-In Chung Samsung
  • Byung Jin Cho KAIST
  • Sung Woong Chung Hynix
  • Luigi Colombo TI
  • Shamik Das Mitre
  • Erik DeBenedictis SNL
  • Simon Deleonibus LETI
  • Bob Fontana IBM
  • Paul Franzon NCSU
  • Akira Fujiwara NTT
  • Christian Gamrat CEA
  • Mike Garner Intel
  • Dan Hammerstrom PSU
  • Wilfried Haensch IBM
  • Tsuyoshi Hasegawa NIMS
  • Shigenori Hayashi Matsushita
  • Dan Herr SRC
  • Toshiro Hiramoto U. Tokyo
  • Matsuo Hidaka ISTEK
  • Jim Hutchby SRC
  • Adrian Ionescu EPFL
  • Kiyoshi Kawabata Renesas Tech
  • Seiichiro Kawamura Selete
  • Suhwan Kim Seoul Nation U
  • Hyoungjoon Kim Samsung
  • Atsuhiro Kinoshita Toshiba
  • Dae-Hong Ko Yonsei U.
  • Hiroshi Kotaki Sharp
  • Mark Kryder INSIC
  • Zoran Krivokapic GLOBALFOUNDRIES
  • Kee-Won Kwon Seong Kyun Kwan U.
  • Jong-Ho Lee Hanyang U.
  • Lou Lome IDA
  • Hiroshi Mizuta U. Southampton
  • Matt Marinella SNL
  • Kwok Ng SRC
  • Fumiyuki Nihei NEC
  • Ferdinand Peper NICT
  • Yaw Obeng NIST
  • Dave Roberts Nantero
  • Barry Schechtman INSIC
  • Sadas Shankar Intel
  • Atsushi Shiota JSR Micro
  • Satoshi Sugahara Tokyo Tech
  • Shin-ichi Takagi U. Tokyo
  • Ken Uchida Tokyo Inst. Tech.
  • Thomas Vogelsang Rambus
  • Yasuo Wada Toyo U.
  • Rainer Waser RWTH A
  • Franz Widdershoven NXP
  • Jeff Welser NRI/IBM
  • Philip Wong Stanford U.
  • Dirk Wouters IMEC
  • Kojiro Yagami Sony
  • David Yeh SRC/TI
  • Hiroaki Yoda Toshiba
  • In-K Yoo SAIT
  • Victor Zhirnov SRC
slide3

Evolution of Extended CMOS

Elements

Existing technologies

More Than Moore

ERD-WG in Japan

New technologies

Beyond CMOS

year

changed scope of emerging research devices chapter
Changed Scope of Emerging Research Devices Chapter
  • New More-than-Moore Section added – Focused on RF
  • Emerging Research Memory Devices section broadened in 2011 to include:
    • New “Storage Class Memory” Subsection
    • New Memory “Select Device” Subsection
  • Emerging Research Logic section changed
    • Transitioned n-InGaAs & p-Ge alternate channel MOSFETs to PIDS & FEP.
    • Synchronized more closely with the Nanoelectronics Research Initiative (NRI)
  • Expanded technology Benchmarking section
  • Expanded Architecture Section
slide5

2011 ERD Chapter

        • Emerging Memory Devices
        • Emerging Logic Devices
        • More-than-Moore Devices
        • Benchmarking and Assessing Emerging Devices
        • Emerging Architectures
2009 memory technology entries
2009 Memory Technology Entries

Resistive Memories

  • Redox Memory
  • Electrochemical memory
  • Valence change memory
  • Fuse/Antifuse (Thermochemical memory}
  • Molecular Memory
  • Spin Transfer Torque MRAM
  • Nanoelectromechanical
  • Nanowire PCM
  • Macromolecular (Polymer)

Capacitive Memory

  • Electronic Effects Memory
  • Charge trapping
  • Metal-Insulator Transition
  • FE barrier effects
  • FeFET Memory
2011 memory technology entries
2011 Memory Technology Entries

Resistive Memories

  • Redox Memory
  • Electrochemical memory
  • Valence change memory
  • Fuse/Antifuse (Thermochemical memory}
  • Molecular Memory
  • Spin Transfer Torque MRAM
  • Nanoelectromechanical
  • Nanowire PCM
  • Macromolecular (Polymer)

Capacitive Memory

  • Electronic Effects Memory
  • Charge trapping
  • Metal-Insulator Transition
  • FE barrier effects
  • FeFET Memory
erd erm memory technology assessment workshop
ERD/ERM Memory Technology Assessment Workshop

ITRS ERD/ERM identified two emerging memory technologies for accelerated research & development:

1)STT-MRAM and 2) Redox Resistive RAM

Redox Memory Cell

STT-Memory Cell

memory hierarchy future memory challenge
Memory Hierarchy – Future Memory Challenge

NVM cost/gigabyte ~ $1

Al Fazio - Intel

slide11

One Diode – One Resistor (1D1R) Memory Cell

Select Device = Diode

H-S. P. Wong – Stanford U.

slide12

2011 ERD Chapter

        • Emerging Memory Devices
        • Emerging Logic Devices
        • More-than-Moore Devices
        • Benchmarking and Assessing Emerging Devices
        • Emerging Architectures
2009 logic technology tables
2009 Logic Technology Tables

Table 3 - Non-FET, Non

Charge-based ‘Beyond

CMOS’ devices

_______________

Collective Magnetic Devices

Moving domain wall devices

Atomic Switch

Molecular Switch

Pseudo-spintronic Devices

Nanomagnetic (M:QCA)

Table 1 – Extending

MOSFETs to the End

of the Roadmap

_____________

CNT FETs

Graphene nanoribbons

III-V Channel MOSFETs

Ge Channel MOSFETs

Nanowire FETs

Non-conventional

Geometry Devices

Table 2- Unconventional

FETS, Charge-based

Extended CMOS

_______________

Tunnel FET

I-MOS

Spin FET

SET

NEMS switch

Negative Cg MOSFET

2011 logic technology tables
2011 Logic Technology Tables

Table 1 – Extending MOSFETs to the End

of the Roadmap

___________

CNT FETs

Graphene nanoribbons

III-V Channel MOSFETs

Ge Channel MOSFETs

Nanowire FETs

Tunnel FET

Non-conventional

Geometry Devices

Table 3 - Non-FET, Non

Charge-based ‘Beyond

CMOS’ Devices

_______________

Spin Transfer Torque Logic

Moving domain wall devices

Pseudo-spintronic Devices

Nanomagnetic (M:QCA)

Negative Cg MOSFET

All Spin Logic

Molecular Switch

Atomic Switch

BiSFET

Table 2- Unconventional

FETS, Charge-based

Extended CMOS

Devices

_______________

Spin FET& Spin MOSFET

Negative Cg MOSFET

NEMS switch

Excitonic FET

Mott FET

Tunnel FET

I-MOS

SET

slide15

ERD/ERM Logic Technology Recommended Focus:

Carbon-based Nanoelectronics – Carbon Nanotubes and Graphene

Graphene quantum dot

Band gap engineered

Graphene nanoribbons

FET

(Manchester group)

Nonconventional Devices

Graphene Veselago lense

Graphene pseudospintronics

Graphene Spintronics

Son et al.Nature (07)

Cheianov et al.Science (07)

Trauzettel et al.Nature Phys. (07)

Conventional Devices

P. Kim – Columbia U.

slide16

2011 ERD Chapter

        • Emerging Memory Devices
        • Emerging Logic Devices
        • More-than-Moore Devices
        • Benchmarking and Assessing Emerging Devices
        • Emerging Architectures
wireless underlying architecture functions

rf wave

LNA

ADC

011001010…

LO

control

PA

DAC

Wireless underlying architecture / functions

Higher level function

Intermediate levelfunction

nanoradio

filter

oscillator

mixer

LO

Lower level functions

  • spin-torque oscillator
  • graphene

NEMS nanoresonator

slide18

2011 ERD Chapter

        • Emerging Memory Devices
        • Emerging Logic Devices
        • More-than-Moore Devices
        • Benchmarking and Assessing Emerging Devices
        • Emerging Architectures
slide19

PreferredCorner

PreferredCorner

PreferredCorner

Benchmarking

NRI Median Switch Characteristics

ENERGY

DELAY

AREA

All 3 metrics responding consistently – energy and area superiority.

Little change in the energy delay product.

slide20

2011 ERD Chapter

        • Emerging Memory Devices
        • Emerging Logic Devices
        • More-than-Moore Devices
        • Benchmarking and Assessing Emerging Devices
        • Emerging Architectures
four architectural projections
Four Architectural Projections
  • Hardware Accelerators execute selected functions faster than software performing it on the CPU.
  • Alternative switches often exhibit emergent, idiosyncratic behavior. They also maybe non-volatile. We should exploit them.
  • CMOS is not going away anytime soon.
  • New switches may improve high utilization accelerators
slide22

Matching Logic Functions & New Switch Behaviors

New Switch Ideas

Popular Accelerators

Single Spin

Spin Domain

Tunnel-FETs

NEMS

MQCA

Molecular

Bio-inspired

CMOL

Excitonics

Encrypt / Decrypt

Compr / Decompr

Reg. Expression Scan

Discrete COS Trnsfrm

Bit Serial Operations

H.264 Std Filtering

DSP, A/D, D/A

Viterbi Algorithms

Image, Graphics

?

Example: Cryptography Hardware Acceleration

Operations required: Rotate, Byte Alignment, EXORs, Multiply, Table Lookup

Circuits used in Accel: Transmission Gates (“T-Gates”)

New Switch Opportunity: A number of new switches (i.e. T-FETs) don’t have

thermionic barriers: won’t suffer from CMOS Pass-gate VT drop, Body Effect, or Source-Follower delay.

Potential Opportunity: Replace 4 T-Gate MOSFETs with 1 low power switch.

erd key messages
ERD – Key Messages
  • New More-than-Moore Section added – Focused on RF devices
  • Emerging Research Memory Devices section broadened in 2011 to include:
    • New “Storage Class Memory” Subsection
    • New Memory “Select Device” Subsection
    • Transitioned STT-MRAM to PIDS & FEP
    • Introduced new memory device category – Redox RAM
  • Emerging Research Logic changes:
    • Transitioned n-InGaAs & p-Ge alternate channel MOSFETs to PIDS & FEP.
    • Synchronized more closely with the Nanoelectronics Research Initiative (NRI)
  • Expanded technology benchmarking section
  • Expanded Architecture Section