ITRS Public Conference Emerging Research Devices

1. ITRS Public ConferenceEmerging Research Devices 2011 ERD Chapter Jim Hutchby – SRC December 14, 2011

2. Emerging Research Devices Working Group • Hiro Akinaga AIST • Tetsuya Asai Hokkaido U. • Yuji Awano Keio U. • George Bourianoff Intel • Michel Brillouet CEA/LETI • John Carruthers PSU • Ralph Cavin SRC • Chorn-Ping Chang AMAT • An Chen GLFOUNDRIES • U-In Chung Samsung • Byung Jin Cho KAIST • Sung Woong Chung Hynix • Luigi Colombo TI • Shamik Das Mitre • Simon Deleonibus LETI • Bob Doering TI • Tetsua Endoh Tohoku U. • Bob Fontana IBM • Paul Franzon NCSU • Akira Fujiwara NTT • Mike Garner Consultant • Dan Hammerstrom PSU • Wilfried Haensch IBM • Tsuyoshi Hasegawa NIMS • Shigenori Hayashi Matsushita • Dan Herr SRC • Toshiro Hiramoto U. Tokyo • Matsuo Hidaka ISTEK • Jim Hutchby SRC • Adrian Ionescu EPFL • Kiyoshi Kawabata Renesas Tech • Seiichiro Kawamura Selete • Suhwan Kim Seoul Nation U • Hyoungjoon Kim Samsung • Atsuhiro Kinoshita Toshiba • Dae-Hong Ko Yonsei U. • Hiroshi Kotaki Sharp • Mark Kryder INSIC • Franz Kreupl Tech. U. Munich • Zoran Krivokapic GLOBALFOUNDRIES • Kee-Won Kwon Seong Kyun Kwan U. • Jong-Ho Lee Hanyang U. • Thomas Liew ASTAR DSI • Lou Lome IDA • Matthew Marinella SNL • Hiroshi Mizuta U. Southampton • Kwok Ng SRC • Fumiyuki Nihei NEC • Dmitri Nikonov Intel • Kei NodaKyoto U. • Ferdinand Peper NICT • Er-Xuan Ping AMAT • Yaw Obeng NIST • Yutaka Ohno Nagoya U. • Dave Roberts Nantero • Shintaro Sato Fujitsu Labs • Barry Schechtman INSIC • Sadas Shankar Intel • Takahiro Shinada Waseda U. • Masayuki Shirane U. Tokyo • Kaushal Singh AMAT • Satoshi Sugahara Tokyo Tech • Shin-ichi Takagi U. Tokyo • Ken Uchida Toshiba • Thomas Vogelsang Rambus • Yasuo Wada Toyo U. • Rainer Waser RWTH A • Franz Widershoven NXP • Jeff Welser NRI/IBM • Philip Wong Stanford U. • Dirk Wouters IMEC • Kojiro Yagami Sony • David Yeh SRC/TI • Hiroaki Yoda Toshiba • In-K Yoo SAIT • Victor Zhirnov SRC

3. Evolution of Extended CMOS Elements Existing technologies More Than Moore New technologies Beyond CMOS year

4. Changed Scope of Emerging Research Devices Chapter • New More-than-Moore Section added – Focused on RF • Emerging Research Memory Devices section broadened in 2011 to include: • New “Storage Class Memory” Subsection • New “Memory Select Device” Subsection • Emerging Research Logic changed • Transitioned n-InGaAs & p-Ge alternate channel MOSFETs to PIDS & FEP. • Synchronized better with the Nanoelectronics Research Initiative (NRI) • Expanded technology Benchmarking section • Expanded Architecture Section

5. 2011 ERD Chapter • Assessing Emerging Research -- • Memory Devices • Logic Devices • More-than-Moore Devices • Architectures • Benchmarking Emerging Devices

6. 2009 Memory Technology Entries Emerging Memory Technologies • Nanoionic Memory • Electrochemical memory • Valence change memory • Fuse/Antifuse (Thermochemical memory) • Molecular Memory • Spin Transfer Torque MRAM • Nanoelectromechanical RAM • Nanowire PCM • Macromolecular (Polymer) • Electronic Effects Memory • Charge trapping • Metal-Insulator Transition (Mott Device) • Ferroelectric Gate Memory

7. 2011 Memory Technology Entries Emerging Memory Technologies • Redox Resistive Memory • Electrochemical memory • Valence change memory • Fuse/Antifuse (Thermochemical memory) • Molecular Memory • Spin Transfer Torque MRAM • Nanoelectromechanical RAM • Nanowire PCM • Macromolecular (Polymer) • Electronic Effects Memory • Charge trapping • Metal-Insulator Transition (Mott Device) • Ferroelectric Effects Memory • Fe (gate)FET Memory • Ferroelectric Barrier Memory

8. ERD/ERM Memory Technology Assessment Workshop ITRS ERD/ERM identified two emerging memory technologies for accelerated research & development: 1)STT-MRAM and 2) Redox Resistive RAM Redox Memory Cell STT-Memory Cell

9. One Diode – One Resistor (1D1R) Memory Cell Memory Device Select Device Select Device H-S. P. Wong – Stanford U.

11. 2011 ERD Chapter • Emerging Memory Devices • Emerging Logic Devices • More-than-Moore Devices • Benchmarking and Assessing Emerging Devices • Emerging Architectures

12. 2009 Logic Technology Tables Table 12c - Non-FET, Non Charge-based “Beyond CMOS” Devices _______________ Moving domain wall devices Pseudo-spintronic Devices Nanomagnetic Logic(M:QCA) Molecular Switch BiSFET Table 12a – Extending MOSFETs to the End of the Roadmap _______ CNT FETs Graphene nanoribbon FETs III-V n&p-Channel MOSFETs Ge p&n-Channel MOSFETs Nanowire FETs Non-conventional Geometry Devices Table 12b- Unconventional FETS, Charge-based “Beyond CMOS” Devices _____________ Spin FET& Spin MOSFET Negative Cg MOSFET Atomic Switch NEMS switch Tunnel FET I-MOS SET

13. 2011 Logic Technology Tables Table 12a – Extending MOSFETs to the End of the Roadmap _______ CNT FETs Graphene nanoribbon FETs III-V n-Channel MOSFETs Ge p-Channel MOSFETs III-V p-Channel MOSFETs Ge n-Channel MOSFETs Nanowire FETs Tunnel FET Non-conventional Geometry Devices Table 12c - Non-FET, Non Charge-based ‘“Beyond CMOS” Devices _______________ Spin Torque Majority Gate Spin Wave Devices Moving domain wall devices Pseudo-spintronic Devices Nanomagnetic Logic(M:QCA) All Spin Logic Molecular Switch Excitonic FET BiSFET Table 12b- Unconventional FETS, Charge-based “Beyond CMOS” Devices _____________ Spin FET& Spin MOSFET Negative Cg MOSFET Atomic Switch NEMS switch Mott FET Tunnel FET I-MOS SET

14. ERD/ERM Logic Technology Recommended Focus: Carbon-based Nanoelectronics – Carbon Nanotubes and Graphene Graphene quantum dot Band gap engineered Graphene nanoribbons FET (Manchester group) Nonconventional Devices Graphene Veselago lense Graphene pseudospintronics Graphene Spintronics Son et al.Nature (07) Cheianov et al.Science (07) Trauzettel et al.Nature Phys. (07) Conventional Devices P. Kim – Columbia U.

15. 2011 ERD Chapter • Emerging Memory Devices • Emerging Logic Devices • More-than-Moore Devices • Benchmarking and Assessing Emerging Devices • Emerging Architectures

16. rf wave LNA ADC 011001010… LO control PA DAC Wireless underlying architecture / functions Higher level function Intermediate levelfunction nanoradio filter oscillator mixer LO Lower level functions • spin-torque oscillator • graphene NEMS nanoresonator

17. 2011 ERD Chapter • Emerging Memory Devices • Emerging Logic Devices • More-than-Moore Devices • Benchmarking and Assessing Emerging Devices • Emerging Architectures

18. Benchmarking NRI Median Switch Characteristics ENERGY DELAY AREA All 3 metrics responding consistently – energy and area superiority. Little change in the energy delay product.

19. 2011 ERD Chapter • Emerging Memory Devices • Emerging Logic Devices • More-than-Moore Devices • Benchmarking and Assessing Emerging Devices • Emerging Architectures

20. Emerging Architectures • Emerging Memory Architectures in Conventional Computing • Wireless Computing • Application Specific Computing • Multicore Computing • Research Database Computing in the Cloud • Evolved Architectures Exploiting Emerging Research Memory Devices • Morphic Architectures • Neuromorphic Architectures • Cellular-automata Architectures • Taxonomy of Computational Ability of Architectures

21. ERD – Key Messages • New More-than-Moore Section added – Focused on RF devices • Emerging Research Memory Devices section broadened in 2011 to include: • New “Storage Class Memory” Subsection • New Memory “Select Device” Subsection • Transitioned STT-MRAM to PIDS & FEP • Introduced new memory device category – Redox RAM • Emerging Research Logic changes: • Transitioned n-InGaAs & p-Ge alternate channel MOSFETs to PIDS & FEP. • Synchronized more closely with the Nanoelectronics Research Initiative (NRI) • Expanded technology benchmarking section • Expanded Architecture Section