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Production and Regional Center at NCU, Taiwan

Production and Regional Center at NCU, Taiwan. CMS-PreShower-PRR. W.T. Lin Department of Physics National Central University Chung-Li, Taiwan. Production at ERSO, Hsin-Chu. After the PHOBOS’ sensors production, ERSO’s production line had been re-modified.

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Production and Regional Center at NCU, Taiwan

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  1. Production and Regional Center at NCU, Taiwan CMS-PreShower-PRR W.T. Lin Department of Physics National Central University Chung-Li, Taiwan

  2. Production at ERSO, Hsin-Chu After the PHOBOS’ sensors production, ERSO’s production line had been re-modified. • Mar. 2000 Integration completed • Apr. 2000 PE aligner installed • Jul. 2000 Machine warmed up • Sep. 2000 R&D runs began Capacity : 1000 wafers per month

  3. PHOBOS vs. CMS Preshower • Tracker vs. Preshower • 6 masks vs. 4 masks AC vs. DC, Double metal vs. single metal • Itotal < 5 mA @ Vfd Itotal @100 V < 10 mA vs. Itotal@300V < 10 mA • Completed vs. On going project • 450 sensors vs. 1200 sensors

  4. PHOBOS Sensor Technology bias bus signal lines metal 2 1.2um ONO vias metal 1 0.2um ONO Double Metal, Single sided, AC coupled, Polysilicon biased p+ Implant Polysilicon Drain Resistor 300mm 5000kW-cm n+ TestKeys PN junction Thin ONO Thick ONO Polysilicon

  5. IV curve of PHOBOS sensor More than 450 wafers have been delivered. Vfd=60V 5mA

  6. Preshower Detector Layout Test key Silicon Detector 63 mm

  7. Structural Drawing Passivation Metal Strip Field oxide P+ strip i-type substrate N+ layer Metal

  8. CMS Si-Sensor R&D • Depth of p+ and n+ : 3, 5, and 14 mm • Thickness of Al :1.2 mm • Passivation : nitride + oxide 1.2 mm p+ Al Passivation n type (1,1,1) 320mm n+

  9. Pilot runs & Pre-productions Date batch# wfrs 6/5 cms01 24 6/5 cms02 24 6/15 cms03 24 6/18 cms04 24 6/18 cms05 24 6/15 cms06 24 Date batch# wfrs 10/27 90074 12 10/28 90075 12 1/15 90074A 12 3/2 90075A 12 3/16 00017 12 3/2 00018 12

  10. Summary of IV/CV tests Date batch# depth of n+ majority I@V>Vfd 6/5 cms01 14 mm 50-150 nA/strip 6/5 cms02 50-150 nA/strip 6/15 cms03 5 mm 100-150 nA/strip 6/18 cms04 50-100 nA/strip 6/18 cms053 mm 250-350 nA/strip 6/15 cms06 300-400 nA/strip • More than one strip have high leakage current that sensor • can not be accepted. • 20 accepted sensors : 17 from 03 and 04, 3 from 01 and 02 • 23oC, Cstrip=38 - 42 pF, Vfd= 80 - 120 V

  11. Flow Chart of Testing 1) Sensor received 2) Visual scan 3) Pre-screening : CV, IV 4) sensor dicing 5) Select good sensor for assembly : CV, IV • Write to the data base during the test • CV+IV measurement takes about 20 min/wfr

  12. Wafer Dicing 45o down view Diamond saw : 30 mm Spinning : 35K rpm Speed : 40 mm/sec 35mm P+/top side 300mm 210mm Side view IV curves unchanged after dicing

  13. Production Plans Milestone of delivery • Jun 2001 20 pcs • Dec 2001 130 pcs • Jun 2002 150 pcs • Jan 2003 900 pcs ERSO capacity : 1000 wfrs/month

  14. Equip. for Tests & Assembly • Probe card, Switch board, HV isolation • IV(K236), CV(K590), and HVps(K237) • Single channel probe station • Bonding machine (Kulicke Soffa 4123) • Visual scan station • Jigs will be ordered from CERN

  15. Setup at Regional Lab. IV/CV meters (NCU and ERSO) Visual scan and Bonding machine in 30 m2 clean room

  16. Time consuming and Manpower • 150 working days for measurement : (Base on 50% of yield, 20 min/wfrs, deliver 1200 wfrs) • 2 technicians + 1 Ph.D. student (extra technician + 2 master students will join when assembly starts)

  17. Summary • IV/CV test benches have been set and tested at NCU and ERSO. • CRISTAL data base has been set and tested. • ERSO and Miracle co. are trying to improve the yield

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