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Variation-Aware Design for Nanoscale VLSI

Variation-Aware Design for Nanoscale VLSI. Sachin S. Sapatnekar University of Minnesota CAS-FEST 2010 Circuits and Systems Forum on Emerging and Special Topics. The proliferation of computing. Tablets Entertainment. Smart grid Healthcare, automotive, security, ….

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Variation-Aware Design for Nanoscale VLSI

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  1. Variation-Aware Design for Nanoscale VLSI Sachin S. Sapatnekar University of Minnesota CAS-FEST 2010 Circuits and Systems Forum on Emerging and Special Topics

  2. The proliferation of computing • Tablets • Entertainment • Smart grid • Healthcare, automotive, security, …

  3. More computing everywhere…

  4. The incredibly shrinking transistor Electronics, Vol. 38, No. 8, Apr 19, 1965

  5. Cost of going to a new technology [GLOBALFOUNDRIES]

  6. So why bother? • Because it makes economic sense… • R&D costs are rising, but so is revenue [GLOBALFOUNDRIES]

  7. Layer 5 Layer 4 Layer 3 Layer 2 Layer 1 Bulk Substrate New technologies: 3D ICs Detailed view Generalized view Interlayer Via Through-silicon Vias (TSVs) SOI wafers with bulk substrate removed Inter-layer bonds 1mm Bulk wafer Metal level of wafer 1 10mm 500mm Device level 1 Adapted from [Das et al., ISVLSI, 2003] by B. Goplen

  8. New technologies: near-threshold computing [Dreslinski et al.]

  9. Types of variations • Based on the model • Systematic • Random • “Random” • Based on the source • Process • Environmental • Design Uncertainty • Based on the time when they are seen • One-time variations • Run-time variations

  10. Channel width variation: poly/ diff rounding, misalignment Gale oxide thickness Random dopant fluctuations Poly Diffusion Uniform Non-uniform Source: S. Tyagi Process-related variations: examples Source: Pey&Tung Source: S. Borkar Many of these variations can be modeled by Gaussians

  11. A taxonomy of variations (contd.) Die-to-Die Wafer-to-Wafer Lot-to-Lot Die-to-Die (D2D) Variations Within-Die (WID) Variations Random Systematic [Intel]

  12. The (f)law of averages [The drunk skater problem] http://www.stanford.edu/~savage/flaw/

  13. Why is this important? • Because it affects circuit timing… • … and power

  14. Si Si Si H H H H2 Gate Oxide Poly Substrate SiH + h+→ Si+ + ½H2 Aging effects • Circuit behaviour degrades with time NBTI Electromigration Oxide breakdown Hot carrier injection • Normal lifetime • Constant failure rate • Based on TDDB, EM, hot-electrons… Failure rate [S. Sjøthun] 1-40 weeks Time 7-15 years [Suto, Teradyne]

  15. Environmental variations • Supply voltage • Soft errors Source: Automotive 7-8, 2004 1

  16. Fried egg By Trubador, available at http://www.phys.ncku.edu.tw/~htsu/humor/fry_egg.html Environmental variations: Temperature [IBM] [Chu 1999] [Joshi] [Intel]

  17. Fried egg Tier 5 Tier 4 Tier 3 Tier 2 By Trubador, available at http://www.phys.ncku.edu.tw/~htsu/humor/fry_egg.html Tier 1 Bulk Substrate Technology trends Detailed view Generalized view Intertier Via [Intel] SOI wafers with bulk substrate removed [Chu 1999] Intertier bonds 1mm Cache 70ºC Bulk wafer Metal level of wafer 1 10mm [Intel] Core 500mm Device level 1 120ºC Adapted from [Das et al., ISVLSI, 2003] [Joshi]

  18. Overcoming variations • Three-pronged strategy • Reduce the fundamental sources • Don’t allow them to be expressed (design around the effects) • Mitigate the effects • Example: temperature effects • Low-power design • Design to reduce T • Design to mitigate T-driven degradation • All all levels of abstraction, using all available methods • Design • CAD • Architecture/OS • Algorithms

  19. Adaptive sensing/mitigation A • Sense/adapt feedback loops • Guardbanded presilicon fixes vs. adaptive postsilicon fixes • Monitor cores • Canary circuits • Silicon odometer • Razor, CRISTA, etc. ... C Phase B PC _ OUT Sensor-driven Comp . ... (freq=fref - fstress) Up to 35% overhead Vdd DC-DC Converter Circuit Block LUT Guardbanding vbp Sensor FBB Generator vbn [Kim, Minnesota]

  20. CAS-FEST 2010 • A Resilience Roadmap • Sani Nassif, IBM • Mitigating Variability in Near-Threshold Computing • Dennis Sylvester, Univ. of Michigan • Robust System Design to Overcome CMOS Reliability Challenges • Subhasish Mitra, Stanford Univ. • Computer Aided Circuit Design for Reliability in Nanometer CMOS • Georges Gielen, Katholieke Univ. – Leuven • Process Compensated High Speed Ring Oscillators in Sub-Micron CMOS • Alyssa B. Apsel, Cornell U. • Containing the Nanometer Pandora-box: Design Techniques for Variation-Aware Low-Power Systems • Abhijit Chatterjee, Georgia Tech.

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