Nonequilibrium Green’s Function with Electron-Phonon Interactions

1. Nonequilibrium Green’s Function with Electron-Phonon Interactions • Objective: • Modeling of electron-phonon interactions for NEGF simulations within the effective-mass and Hartree approximations • Approach: • Employ the self-consistent Born approximation for phonon self-energy functions • Select some peak values of phonon dispersion such as • Elastic intra-valley process • Inelastic inter-valley processes • Impact: • Introducing phase-breaking and energy-relaxation processes into NEGF simulations • More efficient calculations than tight-binding NEGF 1 intra-valley and 6 inter-valley scattering modes Electron density (left) and current density (right) spectrums of silicon nanowire transistors with electron phonon-interactions • Result: • We can predict the effect of electron-phonon scattering on silicon nanowire transistors. Ballistic assumption overestimates currents.