1 / 4

Tsukuba International Congress Center Tsukuba, Japan September 22, 2008 15:10 – 19:00

ITRS Emerging Research Devices Workshop Spin Transfer Torque RAM Organized by Dr. U-In Chung - Samsung. Tsukuba International Congress Center Tsukuba, Japan September 22, 2008 15:10 – 19:00. 15:10 Introduction Dr. In-U Chung (Samsung)

arty
Download Presentation

Tsukuba International Congress Center Tsukuba, Japan September 22, 2008 15:10 – 19:00

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. ITRS Emerging Research DevicesWorkshopSpin Transfer Torque RAMOrganized by Dr. U-In Chung - Samsung Tsukuba International Congress Center Tsukuba, Japan September 22, 2008 15:10 – 19:00

  2. 15:10 Introduction Dr. In-U Chung (Samsung) 15:20 (Manufacturing issues in High density STT MRAM)Dr. J. E. Lee (Samsung) 15:55 (Technology in High density perpendicular STT Dr. H. Yoda (Toshiba) MRAM) 16:30 (Scaling limit of STT MRAM) Prof. H. Ohno (Tohoku U.) 17:05 Break 17:20 (Technology on Magnetic Tunnel Junction) Dr. E. Chen (Grandis) 17:55 (Issues and solution for Dry Etching of STT MRAM) Dr. F. Cumbo (Veeco) 18:30 Summary Dr. U-In Chung (Samsung) 19:00 Adjourn (Topics but not presentation titles) Spin Transfer Torque RAM Workshop Agenda

  3. Identify Scaling limit of STT MRAM Identify Manufacturing issues Identify Current Status and Ultimate Performance Metrics for the Memory Table Spin Transfer Torque RAM Workshop Objectives

  4. What will be the most critical parameter for 22nm STT MRAM? : Retention (thermal stability ), Switching current (Jc), Thermal stability, Etch slope, Endurance of Tunnel barrier (MgO), TMR value (Variation) What kind of MTJ can be solution for Post DRAM Application ? : Perpendicular MTJ or In-plane MTJ What etch technology will be more suitable for 22nm STT MRAM? : RIE etch or Ion Beam etch? What values of the parameters for the ITRS ERD Memory Table are valid for STT RAM at 22nm? Spin Transfer Torque RAM Workshop Questions

More Related