Droop esd and heat dissipation of flip chip power leds
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Droop, ESD and Heat dissipation of Flip-Chip Power LEDs. Prof. Liann-Be Chang Vice Dean & Director Engineering College Green Technology Research Center (GTRC). Outline. Epitaxial technology LED process technology Flip Chip technology. MOCVD 磊晶設備. 1 set of MOCVD ( Aixtron).

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Droop, ESD and Heat dissipation of Flip-Chip Power LEDs

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Droop esd and heat dissipation of flip chip power leds

Droop, ESD and Heat dissipation of Flip-Chip Power LEDs

Prof. Liann-Be Chang

Vice Dean & Director

Engineering College

Green Technology Research Center (GTRC)


Outline

Outline

  • Epitaxial technology

  • LED process technology

  • Flip Chip technology


Mocvd

MOCVD

1 set of MOCVD

( Aixtron)

2 sets of MOCVD

( Nippon Sanso)


Mocvd1

MOCVD

JPC


Mocvd2

MOCVD

X


Droop esd and heat dissipation of flip chip power leds


Droop esd and heat dissipation of flip chip power leds


Droop esd and heat dissipation of flip chip power leds


Droop esd and heat dissipation of flip chip power leds

LED

Flip-Chip Bonder

Wafer Bonding Bonder


Wire bump bonder

Wire & Bump Bonder


Droop esd and heat dissipation of flip chip power leds

LED

IS-250 (25cm) Keythley2420


Droop esd and heat dissipation of flip chip power leds

SLM-20T (50cm)

Agilent E3634A (50V;4A)


Droop esd and heat dissipation of flip chip power leds

LED

LED


Droop esd and heat dissipation of flip chip power leds

SC620

:25um

:-40~1500o


Droop esd and heat dissipation of flip chip power leds

LED

Operating Current (mA)

Tj-a (oC)

Forward Volt. (VF)


Mocvd3

MOCVD

  • Apparatus(1F)3 sets of MOCVD ( Nippon Sanso + Aixtron)


Clean room

Clean Room

  • Apparatus(9F) Measurement Equipments

    Device Process Equipments


Methodology used in gtrc to improve led performance

Methodology used in GTRC to Improve LED Performance


Mocvd epitaxial technology

MOCVD epitaxial technology


Low temperature n gan led structure

Low Temperature n-GaN LED Structure

Inserting LT n-GaN layer


Optical electrical characteristic

Optical & Electrical Characteristic


Pattern sapphire substrate leds

Pattern Sapphire Substrate LEDs

(flat-top)

(pyramid)


Optical electrical characteristic1

Optical & Electrical Characteristic

74% up

2 times


Epitaxial growth led on zno template

LED structure

ZnO buffer (300 nm)

Sapphire

Epitaxial Growth : LED on ZnO Template


Improving the luminescence by selective activation or ion implantation

Improving the luminescence by selective activation or ion implantation


Reflectance and contact resistance of ni ag based metal contacts on p type gan

Reflectance and Contact Resistanceof Ni/Ag-Based Metal Contacts on p-Type GaN

Ni/Ag

Ni/Ag/Au

Ni/Ag/Ti/Au


Micro channel led

Micro Channel LED


Electron confine blocking effect

Electron confine (blocking) effect

  • For sample B, except an additional 20-nm-thick p-type Al0.25Ga0.75N EBL inserted between the active layer and the p-type AlGaN/GaN superlattice structure to enhance the electron-

  • blocking effect, the other growth conditions and structures were the same as those for sample A.

  • The light-output power of sample

  • B increases more rapidly and

  • becomes greater than that of

  • sample A in the measurement

  • range from 25 to 130 A/cm2.

Applied Physics Express 3 (2010)


Electron decelerating effect

Electron decelerating effect

Appl. Phys. Lett. (2010).


Efficiency droop research by double hetero structure led

Efficiency droop research by double-hetero structure LED


Wafer bonding technology

Wafer Bonding Technology

At present, wafer bondingtechnology is used widely


The proposed flip chip structure on mos submount

The proposed Flip-Chip Structure on MOS submount

  • high reflect material

heat

  • use MOS heat sink & ESD protecting substrates

  • heat flow can through the submount with high thermal conductivity material


Core technology pick place and u s bonding

Core Technology : Pick/Place and U.S. Bonding


Top view of flip chip power led

Top View of Flip-Chip Power LED


Pn junction mos structure submount

PN Junction & MOS Structure Submount

Conventional FCLED on PN Junction Submount

The Proposed FCLED on MOS Protective Submount


Esd handling capability

ESD Handling Capability

  • FC-LED on PN junction

  • Non flip-chipped LED


Esd handling capability1

ESD Handling Capability

  • FC-LED on MOS

Zc = 1/jc is small for large capacitance submount


Output power intensity

Output Power Intensity

  • Non Flip-chip LED luminance would be saturated at a large current injection

  • The best performance was flip-chip LED on AlN submount because AlN had higher thermal conductivity than Si


Flip chip ac led

Flip-Chip AC-LED

  • We can easily design an 24 V AC-circuit directly on the submount through FC technology


Different led chip on si substrate thermal analysis

Different LED chip on Si substrate thermal analysis

VLED

CLED

FCLED

CLED

VLED

FCLED (20 gold bumps)

69oC

78oC


Remote phosphor

Remote Phosphor


Droop esd and heat dissipation of flip chip power leds

  • Researchers from Taiwans Chung-Gung University have determined the diffusion mechanism into GaAs.

  • Sep,2007


Droop esd and heat dissipation of flip chip power leds

Thank you for your attention


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