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1 . T itle : High-efficiency ( > 40%) III-V Compound Semiconductor Concentrating Solar Cells

SEMINAR. 1 . T itle : High-efficiency ( > 40%) III-V Compound Semiconductor Concentrating Solar Cells 2. S peaker : D r. Byung-Du Oh (Korea Advanced NanoFab Center) 3. T ime : 1 6 :00 – 17:30, Thursday, October 18, 2007

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1 . T itle : High-efficiency ( > 40%) III-V Compound Semiconductor Concentrating Solar Cells

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  1. SEMINAR 1. Title : High-efficiency (>40%) III-V Compound Semiconductor Concentrating Solar Cells 2. Speaker : Dr. Byung-Du Oh (Korea Advanced NanoFab Center) 3. Time : 16:00 – 17:30, Thursday, October 18, 2007 4. Place : e+ Lecture Hall (room 83188), 2nd Research Building, Sungkyunkwan University 5. Summary : Due to the global warming and rapid increase of oil price, the renewable energy becomes more and more important. Solar energy is one of the most important renewable energies. Sun provides very large amount of energy everyday in very clean and quiet form. Recently the solar cell market increases 30-40% annually, and it will reach to at least 40 B$ market in 2010. About 90% of present solar cells consists of bulk silicon, and the silicon shortage occurs due to the rapid expansion of this market in short time. In order to overcome this shortage and to reduce the materials to be used, thin film solar cells are to be produced. So, high efficiency III-V compound semiconductor solar cell becomes important too. The III-V solar cells have been used mainly in space application so far, because of its high cost, even though their high efficiency and good reliability. However, recent advancement of concentrating lens (~X500) and modules makes it possible to use III-V solar cells in terrestrial purpose. The installation area as well as the system price can be reduced by using III-V concentrating solar cell system, since plastic or glass for lens is cheap. In this seminar, the recent development of technology as well as market perspective of high efficiency (>40%) multi-junction III-V solar cells will be presented. 6 Background : Education 1981 Physics, Seoul National University, B.S 1985 Material Science and Engineering, Stanford, M.S 1988 Applied Physics, Stanford, Ph.D Work Experience 1988-1991 IBM T. J. Watson Research Center 1991-1999 Principal Research Scientist, LG Electronics 2000-2004 Vice President, LG Electronics / LG Chem 2005- Korea Advanced NanoFab Center 7. Questions : Professor Ji Beom Yoo (☏ 031-290-7396) Sungkyunkwan University

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