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EE5342 – Semiconductor Device Modeling and Characterization Lecture 29 - Spring 2004

EE5342 – Semiconductor Device Modeling and Characterization Lecture 29 - Spring 2004. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. MOSFET Device Structre Fig. 4-1, M&A*. MOSFET equivalent circuit elements. Fig 10.51*. n-channel enh. circuit model. G. RG. C gd. RDS.

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EE5342 – Semiconductor Device Modeling and Characterization Lecture 29 - Spring 2004

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  1. EE5342 – Semiconductor Device Modeling and CharacterizationLecture 29 - Spring 2004 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/

  2. MOSFET DeviceStructre Fig. 4-1, M&A*

  3. MOSFET equivalentcircuit elements Fig 10.51*

  4. n-channel enh.circuit model G RG Cgd RDS Cgs RD S D Cbd RB Cbs Idrain Cgb DSS DSD RB B

  5. MOS small-signal equivalent circuit Fig 10.52*

  6. MOSFET circuitparameters

  7. MOSFET circuitparameters (cont)

  8. Substrate bias effect on VT (body-effect)

  9. Body effect data Fig 9.9**

  10. Fully biased n-channel VT calc

  11. Values for fmswith silicon gate

  12. Q’d,max and xd,max forbiased MOS capacitor Fig 8.11** |Q’d,max|/q (cm-2) xd,max (microns)

  13. I-V relation for n-MOS ohmic ID non-physical ID,sat saturated VDS VDS,sat

  14. MOS channel-length modulation Fig 11.5*

  15. Analysis of channellength modulation

  16. Channel length mod-ulated drain char Fig 11.6*

  17. Associating theoutput conductance ID ID,sat VDS VDS,sat

  18. L = Ch. L. [m] W = Ch. W. [m] AD = Drain A [m2] AS = Source A[m2] NRD, NRS = D and S diff in squares M = device multiplier SPICE mosfet Model Instance CARM*, Ch. 4, p. 290

  19. SPICE mosfet model levels • Level 1 is the Schichman-Hodges model • Level 2 is a geometry-based, analytical model • Level 3 is a semi-empirical, short-channel model • Level 4 is the BSIM1 model • Level 5 is the BSIM2 model, etc.

  20. SPICE ParametersLevel 1 - 3 (Static)

  21. SPICE ParametersLevel 1 - 3 (Static) * 0 = aluminum gate, 1 = silicon gate opposite substrate type, -1 = silicon gate same as substrate.

  22. SPICE ParametersLevel 1 - 3 (Q & N)

  23. References • CARM = Circuit Analysis Reference Manual, MicroSim Corporation, Irvine, CA, 1995. • M&A = Semiconductor Device Modeling with SPICE, 2nd ed., by Paolo Antognetti and Giuseppe Massobrio, McGraw-Hill, New York, 1993. • M&K = Device Electronics for Integrated Circuits, 2nd ed., by Richard S. Muller and Theodore I. Kamins, John Wiley and Sons, New York, 1986. • Semiconductor Physics and Devices, by Donald A. Neamen, Irwin, Chicago, 1997

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