'Device structure' presentation slideshows

MuGFET

MuGFET. First Time User Guide to MuGFET Mar. 28, 2008. Overview. Introduction Rappture input interface Rappture output interface Summary. Introduction-Structure. What is MuGFET ?. 1. The simulation tool for nano -scale FinFET structure. Double gate (AMD, IBM, Motorola).

690 views • 45 slides

Observation of the spin-Hall Effect

Observation of the spin-Hall Effect. 2005. 4. 18 M1 Colloquium in the Frontier Materials Division. Soichiro Sasaki Suzuki-Kusakabe Lab. Graduate School of Engineering Science Osaka University. Abstract.

699 views • 26 slides

Mid-Infrared Light Sources Based on Difference Frequency Generation in Direct-Bonded Periodically-Poled LiNbO 3 Ridge W

MIOMD-?, Lancaster, Sep. 11-14 Mid-Infrared Light Sources Based on Difference Frequency Generation in Direct-Bonded Periodically-Poled LiNbO 3 Ridge Waveguides H. Suzuki , O. Tadanaga, T. Yanagawa, Y. Nishida H. Miyazawa, K. Magari and M. Asobe NTT Photonics Laboratories NTT Corporation

815 views • 22 slides

Cochlear Implants

Cochlear Implants.

449 views • 17 slides

6.772/SMA5111 - Compound Semiconductors Lecture 22 - Laser Diodes - 3; Detectors -1 - Outline

326 views • 17 slides

Siddarth Sundaresan 1 , Ranbir Singh 1 , R. Wayne Johnson 2 1 GeneSiC Semiconductor Inc.

470 views • 16 slides

The NICEWAY EXERCISE

The NICEWAY EXERCISE. Dr. Peter Ewen Prof. Rebecca Cheung This is taken only by students doing MICROELECTRONICS 3. THE NICEWAY EXERCISE. PROCESS AND DEVICE SIMULATORS IC FABRICATION PROCESSES IMPORTANCE OF SIMULATIONS THE NICEWAY EXERCISE. e.g. oxidation time, oxidation temperature,

276 views • 16 slides

First-Time User Guide BJT Lab V2.0

First-Time User Guide BJT Lab V2.0. Saumitra R. Mehrotra*, Ben Haley & Gerhard Klimeck Network for Computational Nanotechnology (NCN) Electrical and Computer Engineering http://nanohub.org/resources/b jt *smehrotr@purdue.edu. Table of Contents. Introduction What is a BJT? 3

381 views • 14 slides

510 views • 14 slides

Ge-on-Si laser operation at room temperaure

Ge-on-Si laser operation at room temperaure. High Speed Circuits & Systems Laboratory Joungwook Moon 2011. 4. Contents. Abstract 1. Introduction 2. Material and Device Structure 3. Emission Characteristics 4. Summary. Abstract.

226 views • 10 slides

Electronic and Ionic Conductivities of Microtubules and Actin Filaments

Electronic and Ionic Conductivities of Microtubules and Actin Filaments. Introduction.

216 views • 8 slides

gate

h ?. Light Emission From an Ambipolar Semiconducting Polymer Field Effect Transistor James Swensen, Cesare Soci and Alan J. Heeger UC Santa Barbara DMR- 0099843 Program Director: Dr. Andrew J. Lovinger.

190 views • 2 slides