Substrate bias - PowerPoint PPT Presentation

Barry E. Burke

Orthogonal-Transfer Charge-Coupled Devices and Low-Noise Charge-Coupled Devices Readout Circuits*. Barry E. Burke.

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EE 466: VLSI Design

EE 466: VLSI Design. Lecture 03. The inversion layer charge Q I represents the total mobile electron charge on the surface and its expression at the source end of the channel is:

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SOIPD

SOIPD. KEK-LBNL-Padova collaboration. Silicon On Insulator (SOI) detectors. ● CMOS electronics implanted on a thin silicon layer on top of a buried oxide (BOX): ensures full dielectric isolation, small active volume and low junction capacitance

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