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FET device and Molecular interaction 나노 물리소자 특강 Introduction Spring, 2008

FET device and Molecular interaction 나노 물리소자 특강 Introduction Spring, 2008. Young June Park NSI_NCRC, Seoul National University Korea Nano Research Association. MOSFET as the core of IT. Simple math. For 0.1*0.1um MOSFET - V = Q/C C= 15 fF/um**2 # of electrons in the

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FET device and Molecular interaction 나노 물리소자 특강 Introduction Spring, 2008

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  1. FET device and Molecular interaction 나노 물리소자 특강 Introduction Spring, 2008 Young June Park NSI_NCRC, Seoul National University Korea Nano Research Association

  2. MOSFET as the core of IT Simple math. For 0.1*0.1um MOSFET - V = Q/C C= 15 fF/um**2 # of electrons in the Gate to change 100mV = 1.5 *10**(-17)/e =100개

  3. Many new Comers: From Collinge, INC 07

  4. MOSFET DRAM cell and cell interaction Cap W Bit Line Type A Uni. Of Glasgow, 2000 DRAM cell

  5. 40nm Quantum effects as the new horizons For MOSFET and conventional electronic devices QM for chemistry QM for solid state

  6. 40nm MOSFET channel is changed due to Source drain stress

  7. Nano size effects change Energy band IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 4, APRIL 2004 191 A Logic Nanotechnology Featuring Strained-Silicon Scott E. Thompson,

  8. MOSFET channel is changed due to Source drain stress(3)

  9. Conventional MOSFET has been used To probe the molecule(ISFET) IEEE SENSOR CONFERENCE TORONTO, OCTOBER 2003 1 ISFET, Theory and Practice Prof.Dr.Ir.P.Bergveld Em, University of Twente, Fac.EE, MESA+ Research Institute, Box 217, 7500 AE Enschede

  10. Conventional MOSFET has been used To probe the molecule(ISFET) Stolt, CU, Bio-Chemical SensorsMarch 21, 2006

  11. Conventional MOSFET has been used To probe the molecule(ISFET)

  12. Conventional MOSFET has been used To probe the molecule(ISFET)

  13. Conventional MOSFET has been used To probe the molecule(ISFET)

  14. CNT SET is proposed for molecular sensing Carbon Nanotube Single Electron Transistor with Ultra-High Sensitivity for Optical and Bio-Sensor Kazuhiko Matsumoto Osaka University, ISIR 8-1 Mihogaoka, Ibaraki-shi, Osaka, Japan, 567-0047

  15. Nanowire MOSFET

  16. Nanowire MOSFET From Lieber, Havard 2003

  17. 강의 진행 요강 Subtitle: Electronics device and Molecules Tuesday 2-4:30 pm CTL, 1st floor 박영준 교수

  18. 전기신호를 이용해서 신호 및 에너지를 변환하거나, 전환하는 소자가 나노 분야에서 사용되고 있다. 빛, 화학, 분자와 전자소자의 interaction 등에 대해서 콜로키움 형태로 특강을 진행한다.

  19. 1. Introduction: motivation of the lecture 1주: 박영준교수 2. Nano semiconductor Device operational principle         1,2주: MOSFET operational principle(박영준교수, ) 3주: Interface States in MOSFET(박영준교수) 4주: Recent Advancement in MOSFET, Nanowire FET (박영준교수)

  20. 3. Electrochemistry for Nanodevice( 성영은교수) 5주: Basic Electrochemistry 1 6주: Basic Electrochemistry 2 8주: characterization techniques(voltametry)         9주: Electric double layer structure Faradaic interface Non Faradaic interface (Lecture schedule may change from Tuesday 12-2 pm or Wednesday) 10주: Review and Midterm

  21. 4. Charge states of Biomolecules and FET sensing 11주: DNA(TDB) 12주: Protein(TDB) 5. ISFET and Molecular-insulator interface (박영준교수)       13주: ISFET Molecular-insulator interface 14주: Nanowire FET for Molecular detection (박영준교수) 15주. Review session and final

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