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Activity 1 : Introduction to CCDs.
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Activity 1 : Introduction to CCDs.

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  1. Activity 1 : Introduction to CCDs. Simon Tulloch In this activity the basic principles of CCD Imaging is explained.

  2. What is a CCD ? Charge Coupled Devices (CCDs) were invented in the 1970s and originally found application as memory devices. Their light sensitive properties were quickly exploited for imaging applications and they produced a major revolution in Astronomy. They improved the light gathering power of telescopes by almost two orders of magnitude. Nowadays an amateur astronomer with a CCD camera and a 15 cm telescope can collect as much light as an astronomer of the 1960s equipped with a photographic plate and a 1m telescope. CCDs work by converting light into a pattern of electronic charge in a silicon chip. This pattern of charge is converted into a video waveform, digitised and stored as an image file on a computer.

  3. Hole Electron Photoelectric Effect. The effect is fundamental to the operation of a CCD. Atoms in a silicon crystal have electrons arranged in discrete energy bands. The lower energy band is called the Valence Band, the upper band is the Conduction Band. Most of the electrons occupy the Valence band but can be excited into the conduction band by heating or by the absorption of a photon. The energy required for this transition is 1.26 electron volts. Once in this conduction band the electron is free to move about in the lattice of the silicon crystal. It leaves behind a ‘hole’ in the valence band which acts like a positively charged carrier. In the absence of an external electric field the hole and electron will quickly re-combine and be lost. In a CCD an electric field is introduced to sweep these charge carriers apart and prevent recombination. photon photon Conduction Band Increasing energy 1.26eV Valence Band Thermally generated electrons are indistinguishable from photo-generated electrons . They constitute a noise source known as ‘Dark Current’ and it is important that CCDs are kept cold to reduce their number. 1.26eV corresponds to the energy of light with a wavelength of 1mm. Beyond this wavelength silicon becomes transparent and CCDs constructed from silicon become insensitive.

  4. CCD Analogy A common analogy for the operation of a CCD is as follows: An number of buckets (Pixels) are distributed across a field (Focal Plane of a telescope) in a square array. The buckets are placed on top of a series of parallel conveyor belts and collect rain fall (Photons) across the field. The conveyor belts are initially stationary, while the rain slowly fills the buckets (During the course of the exposure). Once the rain stops (The camera shutter closes) the conveyor belts start turning and transfer the buckets of rain , one by one , to a measuring cylinder (Electronic Amplifier) at the corner of the field (at the corner of the CCD) The animation in the following slides demonstrates how the conveyor belts work.


  6. Exposure finished, buckets now contain samples of rain.

  7. Conveyor belt starts turning and transfers buckets. Rain collected on the vertical conveyor is tipped into buckets on the horizontal conveyor.

  8. Vertical conveyor stops. Horizontal conveyor starts up and tips each bucket in turn into the measuring cylinder .

  9. After each bucket has been measured, the measuring cylinder is emptied , ready for the next bucket load. `

  10. A new set of empty buckets is set up on the horizontal conveyor and the process is repeated.

  11. Eventually all the buckets have been measured, the CCD has been read out.

  12. Structure of a CCD 1. The image area of the CCD is positioned at the focal plane of the telescope. An image then builds up that consists of a pattern of electric charge. At the end of the exposure this pattern is then transferred, pixel at a time, by way of the serial register to the on-chip amplifier. Electrical connections are made to the outside world via a series of bond pads and thin gold wires positioned around the chip periphery. Image area Metal,ceramic or plastic package Connection pins Gold bond wires Bond pads Silicon chip On-chip amplifier Serial register

  13. CCD Readout Animation

  14. Image area (exposed to light) Parallel (vertical) registers Charge motion Pixel Serial (horizontal) register Output amplifier Charge motion masked area (not exposed to light) CCD Readout Architecture Terms

  15. CCD Clocking

  16. Well Capacity • Well capacity is defined as the maximum charge that can be held in a pixel. • “Saturation” is the term that describes when a pixel has accumulated the maximum amount of charge that it can hold. • The “full well” capacity in a CCD is typically a few hundred thousand electrons per pixel for today’s technologies. • A rough rule of thumb is that well capacity is about 10,000 electrons/um2. • The following gives a typical example (for a surface channel CCD).

  17. Well Capacity and Blooming Blooming Spillage Spillage pixel boundary pixel boundary Overflowing charge packet Photons Photons

  18. Blooming Example Bloomed star images

  19. Read-Out Noise • Read noise is mainly due to Johnson noise in amplifier. • This noise can be reduced by reducing the bandwidth, but this requires that readout is slower.

  20. Defects: Dark Columns Dark columns: caused by ‘traps’ that block the vertical transfer of charge during image readout. Traps can be caused by crystal boundaries in the silicon of the CCD or by manufacturing defects. Although they spoil the chip cosmetically, dark columns are not a big problem (removed by calibration).

  21. Defects: Bright Columns Bright columns are also caused by traps . Electrons contained in such traps can leak out during readout causing a vertical streak. Hot Spots are pixels with higher than normal dark current. Their brightness increases linearly with exposure times Somewhat rarer are light-emitting defects which are hot spots that act as tiny LEDS and cause a halo of light on the chip. Bright Column Cluster of Hot Spots Cosmic rays

  22. Charge Transfer Efficiency CTE = Charge Transfer Efficiency (typically 0.9999 to 0.999999) = fraction of electrons transferred from one pixel to the next CTI = Charge Transfer Inefficiency = 1 – CTE (typically 10– 6 to 10– 4) = fraction of electrons deferred by one pixel or more Cause of CTI: charges are trapped (and later released) by defects in the silicon crystal lattice CTE of 0.99999 used to be thought of as pretty good but …. Think of a 9K x 9K CCD

  23. Example: X-ray events with charge smearing in an irradiated CCD (from GAIA-LU-TN01) In the simplest picture (“linear CTI”) part of the original image is smeared with an exponential decay function, producing “tails”: original image after n transfers direction of charge transfer

  24. Structure of a CCD 2. CCDs are are manufactured on silicon wafers using the same photo-lithographic techniques used to manufacture computer chips. Scientific CCDs are very big ,only a few can be fitted onto a wafer. This is one reason that they are so costly. The photo below shows a silicon wafer with three large CCDs and assorted smaller devices. A CCD has been produced by Philips that fills an entire 6 inch wafer! It is the worlds largest integrated circuit. Don Groom LBNL

  25. Structure of a CCD 3. The diagram shows a small section (a few pixels) of the image area of a CCD. This pattern is repeated. Channel stops to define the columns of the image Plan View Transparent horizontal electrodes to define the pixels vertically. Also used to transfer the charge during readout One pixel Electrode Insulating oxide n-type silicon p-type silicon Cross section Every third electrode is connected together. Bus wires running down the edge of the chip make the connection. The channel stops are formed from high concentrations of Boron in the silicon.

  26. Random Walk in Field-Free Thick Device