1 / 15

Hamburg University: Plans for SLHC Silicon Detector R&D Georg Steinbrück

Hamburg University: Plans for SLHC Silicon Detector R&D Georg Steinbrück. Wien Feb 20, 2008. Plans for SLHC Silicon Detector R&D. Projects and collaborations of the group Strategies Measurements of material properties Sensor simulation/optimization Simulation of detector performance.

tryna
Download Presentation

Hamburg University: Plans for SLHC Silicon Detector R&D Georg Steinbrück

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Hamburg University:Plans for SLHC Silicon Detector R&DGeorg Steinbrück Wien Feb 20, 2008

  2. Plans for SLHC Silicon Detector R&D • Projects and collaborations of the group • Strategies • Measurements of material properties • Sensor simulation/optimization • Simulation of detector performance

  3. Projects and Collaborations of the Group • The group is involved in the following Projects with respect to Detector R&D: • LHC (funded by BMBF) • HGF-Alliance (17 German Universities + DESY + FZK) “Physics at the terascale” • WP1: The Virtual Laboratory for Detector Technologies • WP2: Detector R&D Projects • HPAD-XFEL (with Bonn, PSI, DESY) • Approved. Project started. • PAD-Marie Curie (with CERN, DESY, …) “Marie Curie Training Network on Particle Detectors” • Approved in principle. Contract negotiations with EU.

  4. Strategies Study of macroscopic properties: IV, CV, TCT (transient current technique) Study of microscopic properties: DefectsDLTS: deep level transient spectroscopy, TSC: thermally stimulated current method) Sensor simulation/ optimization: E, I, C as a function of irradiation, material Neff, I, te,h :f(Doping, t, radiation dose, …) • simulation • experiment: -multi-TCT -testbeam Simulation of charge collection in detector detector = dE/dx x sensor x FE electronics e, spatial resolution, reconstruction Monte Carlo

  5. Examples Material Properties SLHC operating scenario, measurement compared to simulation: “Hamburg Model” Thin n-type epi-Silicon. No space charge sign inversion after proton and neutron irradiation. Explanation: Introduction of shallow donors overcompensates creation of acceptors. More pronounced in 25µm Si due to higher oxygen concentration.

  6. Study of Microscopic Defects: Thermally Stimulated Current (TSC)Neff Difference ND-H und Neff: VP TSC results for fully depleted diodes. Goal: Identification of defects responsible for long term annealing (“reverse annealing“) of Neff. VFD • rad. induced acceptors in lower half of band • gap: neg. charged, neg. space charge • hole traps (H). • Increase with annealing time • neg. space charge increases, Neff decreases! conduction band valence band

  7. Simulation of Detector Performance, Comparison with Test Beam Data Example testbeam measurement for irradiated CMS sensors integrated h (PH(R)/PH(L)+PH(R)) versus h for various incidence angles. Example simulation: Reconstructed position versus reduced incidence position on strip.

  8. Front structure (strip/pixel) I1 I0 t2 t1 Bias-Voltage Vbias t0 t1 t2 Backside Simulation of Charge Clouds hole cloud electron cloud Current is induced to all strips Readout of current allows to investigate charge cloud distribution e collected I0 current on closest strip I1current on neighboring strip black: sum of both strips h collected Goal: Study the effects of trapping.

  9. attenuator + amplifier x-y stage temporary detector support optics Laser z table Verification with Multi Channel TCT • Goal: Time-resolved measurement of charge collection in Si-pixel and strip detectors in multiple channels up to very high charge densities. fine-grain position and angle scans. • Multi-TCT under construction in Hamburg: • ps laser (1052 nm and 660 nm), <90ps, Wmax~200pJ, spot size <10 µm (red) • penetration depth 3 µm (red), 1000µm (IR) • fast amplifiers (miteq) • data acquisition with fast oscilloscope (500 MHz, 1GS/channel), possible upgrade to digitizer cards with up to 20 ch, synchronized • cooled detector support (Peltier) 10 ns

  10. People • Doris Eckstein (main Hamburg contact person) • Robert Klanner • Peter Schleper • Georg Steinbrück • Eckhart Fretwurst (defect engineering) • Julian Becker, PhD student (multi-TCT) • Volodymyr Khomenkov (starting ~March) (Detector simulation) • Ajay Srivastava (just started) (sensor simulation: TCAD,…)

  11. Backup

  12. Schematic set-up of the Multi-TCT bias voltage supply, leakage and guardring current measurement PID temperature controller z working distance x optic axis (z) optic fiber and optics y attenuators and amplifiers Oscilloscope laser and driver trigger line

  13. 660 nm (red) minimum energy: 1 mip  10 x XFEL /pulse  70 ps pulse width maximum energy: 140 pJ/pulse 4x104 XFEL-/pulse 100 million e-h pairs  4000 mips  800 ps pulse width 1052nm (infrared) minimum energy: 1 mip  10 x XFEL /pulse 70 ps pulse width maximum energy: 275 pJ/pulse 4x104 XFEL-/pulse 100 million e-h pairs  4000 mips  700 ps pulse width Laser system (PicoQuant) Gaussian beam after single mode fiber

  14. Laser system (red) maximum energy: 140 pJ/pulse 800 ps pulse width minimum energy: 22 pJ/pulse 70 ps pulse width

  15. Laser system (IR) minimum energy: 44 pJ/pulse 70 ps pulse width maximum energy: 275 pJ/pulse 700 ps pulse width

More Related