1 / 20

Irmantas Barnackas, prof. L. Pran e vi čius Lithuanian Energy Institute 2006 02 03

Destabilization of Mg-based hydrogen storage materials: experimental results. Irmantas Barnackas, prof. L. Pran e vi čius Lithuanian Energy Institute 2006 02 03. The main goal of the work. To synthesize destabilized MgH 2 hydride and to investigate the hydride properties.

stephanie-ellison
Download Presentation

Irmantas Barnackas, prof. L. Pran e vi čius Lithuanian Energy Institute 2006 02 03

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Destabilization of Mg-based hydrogen storage materials: experimental results Irmantas Barnackas, prof. L. Pranevičius Lithuanian Energy Institute 2006 02 03

  2. The main goal of the work To synthesize destabilized MgH2 hydride and to investigate the hydride properties

  3. Experimental technique: • to produce nanocrystalline Mg, Mg-Ti thin film materials using magnetron sputtering; • to hydrogenate Mg, Mg-Ti thin films in high hydrogen pressure and temperature (p,T); • to study Mg, Mg-Ti thin films de-hydrogenation kinetics using GDOES techniques; • to analyze Mg, Mg-Ti thin films properties of as-deposited, after hydrogenation and de-hydrogenation using XRD, SEM and GDOES methods.

  4. Parameters of as-deposited Mg and MgTi films : Ti layer UTi = 490 V, ITi = 0.5 A, t = 5 sec. Mg film Pressure (Ar) – 0.4 Pa UBIAS = -100 V, IBIAS = 10-60 mA UMg = 420 V, IMg = 1 A, t = 5 min. Quartz substrate Mg film UMg = 405 V, IMg = 1 A, t = 5 min. Ti layer UTi = 480 V, ITi = 0.5 A, t = 5 sec. Quartz substrate UMg = 410 V, IMg = 1 A UTi = 440 V, ITi = 0.5 A t = 5 min. Mg + Ti film Quartz substrate Mg film UMg = 420 V, IMg = 1 A, t = 5 min. Quartz substrate

  5. Parameters of hydrogenation/dehydrogenation of Mg, MgTi thin films in high hydrogen pressure and temperature (p,T) Parameters of hydrogenation: • Pressure (H2) – 8-11 bar • Temperature – RT – 320 0C • Hydrogenation duration – 6 hour Parameters of dehydrogenation: • Temperature – RT – 450 0C • Dehydrogenation duration – 60 min.

  6. As-deposited Mg film: - XRD and SEM analysis SEM micrograph of as-deposited Mg film on quartz substrate XRD diffractogram of as-deposited Mg film on quartz substrate

  7. Hydrogenation/dehydrogenation kinetics of Mg film: -XRD and SEM analysis a b XRD analysis of Mg film after hydrogenation/dehydrogenation processes SEM micrograph of Mg film: (a) after hydrogenation; (b) after dehydrogenation

  8. Studies of de-hydrogenation kinetics of Mg thin films

  9. As-deposited Mg-Ti film: - XRD and SEM analysis SEM micrograph of as-deposited MgTi film on quartz substrate XRD diffractogram of as-deposited MgTi film on quartz substrate

  10. Hydrogenation/dehydrogenation kinetics of Mg-Ti film: -XRD and SEM analysis SEM micrograph of MgTi film after hydrogenation XRD analysis of Mg-Ti film after hydrogenation process

  11. As-deposited Mg-Ti film: - XRD and SEM analysis SEM micrograph of as-deposited MgTi film on quartz substrate XRD diffractogram of as-deposited MgTi film on quartz substrate

  12. Hydrogenation/dehydrogenation kinetics of Mg-Ti film: -XRD and SEM analysis a b SEM micrograph of MgTi film: (a) after hydrogenation; (b) after dehydrogenation XRD analysis of MgTi film after hydrogenation/dehydrogenation processes

  13. Studies of de-hydrogenation kinetics of Mg-Ti thin films

  14. As-deposited Mg-Ti film: - XRD and SEM analysis SEM micrograph of MgTi film after hydrogenation XRD diffractogram of as-deposited MgTi film on quartz substrate

  15. Hydrogenation/dehydrogenation kinetics of Mg-Ti film: -XRD and SEM analysis a b SEM micrograph of MgTi film: (a) after hydrogenation; (b) after dehydrogenation XRD analysis of MgTi film after hydrogenation/dehydrogenation processes

  16. Studies of de-hydrogenation kinetics of Mg-Ti thin films

  17. As-deposited Mg-Ti film: - XRD and SEM analysis SEM micrograph of MgTi film after hydrogenation XRD diffractogram of as-deposited MgTi film on quartz substrate

  18. Hydrogenation/dehydrogenation kinetics of Mg-Ti film: -XRD and SEM analysis a b XRD analysis of MgTi film after hydrogenation/dehydrogenation processes SEM micrograph of MgTi film: (a) after hydrogenation; (b) after dehydrogenation

  19. Studies of de-hydrogenation kinetics of Mg-Ti thin films

  20. Conclusions • 2 µm Mg and MgxTiy thin films were successfullydeposited on the quartz substrates using magnetron sputtering. • After the hydrogenation of pure Mg thin films in hydrogen atmosphere, in high pressure and high temperature, MgH2 thin films were successfully formed. • The MgTi thin film deposited without bias voltage and hydrided in high pressure and high temperature (p,T) at 320 0C for 6 hour transforms to MgH2.

More Related