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Power Factor Correction in Switch Mode Power Supplies. Using the SiC Schottky Diode. Team. Team Leader Robin Kelley Team Members Travis Brignac Clinton Livingston Advisor Dr. Mazzola. Abstract.

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Presentation Transcript
slide2
Team
  • Team Leader
    • Robin Kelley
  • Team Members
    • Travis Brignac
    • Clinton Livingston
  • Advisor
    • Dr. Mazzola
abstract
Abstract
  • Design a switch mode power supply with a new power factor correction circuit, which implements the SiC Schottky diode.
  • Application of SMPS as an electronic ballast
  • Issue Application Note detailing use of the SiC Schottky diode in power factor correction
comparison si pn vs sic schottky
Comparison: Si pn vs. SiC Schottky
  • Reverse biased pn junction diode does not turn off fast enough during switching
  • This is due to the removal of excess carries from the depletion region
  • Causes reverse recovery transient
  • SiC Schottky diodes do not need to remove excess carries from the depletion region
  • Eliminates reverse recovery transient.
  • Allows for higher operating frequencies
prototype results
Prototype Results

Lamp Voltage f=200kHz

Resistive Load f=100kHz

current future work
Current / Future Work
  • Debugging Stage of PFC
  • Second Design Phase of Inverter Circuit
  • Integrate major circuits
  • Final Testing
references
References
  • [1] H. Kapels, I. Zverev, R. Rupp, and L. Lorenz, “SiC Schottky diodes: A Milestone in hard switching applications,” Application Note, Infineon Technologies, 2001.
  • [2] Marco Scherf and Ilia Zverev, “200W SMPS Demonstration Board,” Application Note, Infineon Technology, v1.2, November 2001.
  • [3] M. Bairanzade, “Electronic Lamp Ballast Design,” Application Note, Motorola, 1995.
  • [4] “SWITCHMODEPower Supplies Reference Manual and Design Guide,” Manual, ON Semiconductor, Rev.3, July 2002.
  • [5] “Infineon Technologies Produces World’s first Power Semiconductors in Silicon Carbide,” http://www.infineon.com/news/press/102-019e.htm, Infineon Technologies AG, Muenchen,Germany, February 5, 2001
  • [6] C. Miesner, R. Rupp, H. Kapels, M. Krach, and I. Zverev, “thinQ!™ Silicon Carbide Schottky Diodes: An SMPS Circuit Designer’s Dream Comes True!,” Technical White Paper, Infineon Technology, Infineon Technologies AG, September, 2001.
  • [7] Ming Hian Chew, “Design of Power Factor Correction Circuit Using GreenlineE Compact Power Factor Controller MC33260,” Application Note for AND8016/D, ON Semiconductor, June 2002.
  • [8] Product Information E2/32IS-120 Two Lamp Operation, 120V, Howard Industries, Inc., February 2001.