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Power Factor Correction in Switch Mode Power Supplies

Power Factor Correction in Switch Mode Power Supplies. Using the SiC Schottky Diode. Team. Team Leader Robin Kelley Team Members Travis Brignac Clinton Livingston Advisor Dr. Mazzola. Abstract.

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Power Factor Correction in Switch Mode Power Supplies

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  1. Power Factor Correction in Switch Mode Power Supplies Using the SiC Schottky Diode

  2. Team • Team Leader • Robin Kelley • Team Members • Travis Brignac • Clinton Livingston • Advisor • Dr. Mazzola

  3. Abstract • Design a switch mode power supply with a new power factor correction circuit, which implements the SiC Schottky diode. • Application of SMPS as an electronic ballast • Issue Application Note detailing use of the SiC Schottky diode in power factor correction

  4. Comparison: Si pn vs. SiC Schottky • Reverse biased pn junction diode does not turn off fast enough during switching • This is due to the removal of excess carries from the depletion region • Causes reverse recovery transient • SiC Schottky diodes do not need to remove excess carries from the depletion region • Eliminates reverse recovery transient. • Allows for higher operating frequencies

  5. System / Hardware 120V AC

  6. EMI Filter / AC Rectifier

  7. Waveforms

  8. Power Factor Correction

  9. DC-AC Inverter

  10. Inverter Simulation Results

  11. Prototype Results Lamp Voltage f=200kHz Resistive Load f=100kHz

  12. Constraints vs Results

  13. Current / Future Work • Debugging Stage of PFC • Second Design Phase of Inverter Circuit • Integrate major circuits • Final Testing

  14. Questions?

  15. References • [1] H. Kapels, I. Zverev, R. Rupp, and L. Lorenz, “SiC Schottky diodes: A Milestone in hard switching applications,” Application Note, Infineon Technologies, 2001. • [2] Marco Scherf and Ilia Zverev, “200W SMPS Demonstration Board,” Application Note, Infineon Technology, v1.2, November 2001. • [3] M. Bairanzade, “Electronic Lamp Ballast Design,” Application Note, Motorola, 1995. • [4] “SWITCHMODEPower Supplies Reference Manual and Design Guide,” Manual, ON Semiconductor, Rev.3, July 2002. • [5] “Infineon Technologies Produces World’s first Power Semiconductors in Silicon Carbide,” http://www.infineon.com/news/press/102-019e.htm, Infineon Technologies AG, Muenchen,Germany, February 5, 2001 • [6] C. Miesner, R. Rupp, H. Kapels, M. Krach, and I. Zverev, “thinQ!™ Silicon Carbide Schottky Diodes: An SMPS Circuit Designer’s Dream Comes True!,” Technical White Paper, Infineon Technology, Infineon Technologies AG, September, 2001. • [7] Ming Hian Chew, “Design of Power Factor Correction Circuit Using GreenlineE Compact Power Factor Controller MC33260,” Application Note for AND8016/D, ON Semiconductor, June 2002. • [8] Product Information E2/32IS-120 Two Lamp Operation, 120V, Howard Industries, Inc., February 2001.

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