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Lecture 16

Lecture 16

Lecture 16. OUTLINE The MOS Capacitor (cont’d) Electrostatics Reading : Pierret 16.3; Hu 5.2-5.5. +. +. +. +. +. +. -. -. -. -. -. -. Accumulation (n+ poly-Si gate, p-type Si). M. O. S. V G < V FB. 3.1 eV. | qV ox |. E c = E FM. GATE. E v. |qV G |. x o.

By lefty
(98 views)

Mark Davies Trevor Charlton Denis Baudin

Mark Davies Trevor Charlton Denis Baudin

New Design Methods to Achieve Greater Safety in Low Voltage Systems During a High Voltage Earth Fault. Mark Davies Trevor Charlton Denis Baudin. Mark Davies – UK – Session 2 – Paper 0376. Background.

By sheena
(145 views)

SURFACE POTENTIAL

SURFACE POTENTIAL

SURFACE POTENTIAL. Why should we be interested in colloidal system? 1. First reason – PURELY EPISTEMOLOGICAL If we consider the three states of matter- gas, liquid and solid- we can observe colloidal system in all possible combination. 2 . Second reason – ANTHROPOLOGICAL

By alexia
(178 views)

Potential near a point charge

Potential near a point charge

Potential near a point charge. A. B. +. What is the potential difference between A and B?. Change in potential along a short section of the path:. A. B. Now integrate along the path:. +. Change in potential along a short section of the path:. A. B. +.

By moya
(90 views)

Electronic characterization of dislocations

Electronic characterization of dislocations

Surf. Potential. Electronic characterization of dislocations. 0.1 V /Div. 10 nm /Div. Morphology. Potential. G. Koley and M. G. Spencer, Appl. Phys. Lett. 78 , 2873 (2001). UV light. Surface potential patterning using mask. 20 m circle quartz mask. HFET Sample

By bruno
(87 views)

Acceleration Noise in LISA

Acceleration Noise in LISA

Surface Potential Measurements with the LISA Kelvin Probe Jordan Camp LIGO/LISA Charging Workshop July 26, 2007 G070573-00-R. Acceleration Noise in LISA. LISA measurement sensitivity is 10 -12 m over 1000 sec A force of 10 -16 N will produce this displacement in 1000 sec!

By ron
(116 views)

Electron transfer in heterogeneous systems

Electron transfer in heterogeneous systems

Electron transfer in heterogeneous systems. 29.3 The electrode-solution interface (Electrical double layer) Helmholtz layer model . Gouy-Chapman Model. This model explains why measurements of the dynamics of electrode processes are almost done using a large excess of supporting electrolyte.

By arvin
(381 views)

NMOS

NMOS

NMOS. PMOS. K-Map of NAND gate. CMOS Realization of NAND gate. K-Map. CMOS -NOR gate. CMOS Realization of NOR gate. Only one threshold voltage drop across series of nMOS transistors. Conducting. AND gate. Fig: CMOS Realization of AND gate. P tree.

By cybil
(276 views)

An Application of the Method of Images: Who would have thought it?

An Application of the Method of Images: Who would have thought it?

An Application of the Method of Images: Who would have thought it? David M. Schaefer, Matthew Reames * , Jeremy Robinson Towson University Donald Rimai NexPress Inc. Ronald Reifenberger, Brian Walsh Purdue University * Graduate School at U. of MD, College Park. Outline.

By velvet
(83 views)

Effect of VUV and UV Irradiation on low- k Dielectrics

Effect of VUV and UV Irradiation on low- k Dielectrics

Effect of VUV and UV Irradiation on low- k Dielectrics. H. Sinha a , J.L. Lauer a , M.T. Nichols a , G.A. Antonelli b , Y. Nishi c and J.L. Shohet a a University of Wisconsin-Madison, Madison, WI 53706 b Novellus Systems, Tualatin, OR 97062 c Stanford University, Stanford, CA 94305.

By aadi
(102 views)

Signatures of Chemical Defects in Carbon Nanotube Electronic Devices

Signatures of Chemical Defects in Carbon Nanotube Electronic Devices

Signatures of Chemical Defects in Carbon Nanotube Electronic Devices. Brett Goldsmith Collins Lab Department of Physics and Astronomy. A broad look at defects. Tools to Study CNT Defects. Fan, Nature Materials. December, 2005. Drain. Source. V SD. V F. V tip.

By jenski
(106 views)

Height

Height

Surface Reactivity of Nanostructured Light Weight Metals Henry J. Rack, Clemson University, DMR 0836068.

By taniel
(123 views)

Microcantilevers III

Microcantilevers III

The cantilever based sensors can be classified into three groups General detection of any short range forces : Scanning probe microscopy Detection of mass attachment: based on changes in frequency response

By cybil
(187 views)

Organic devices & potential mapping 3D simulations and experiments

Organic devices & potential mapping 3D simulations and experiments

TU / e. Organic devices & potential mapping 3D simulations and experiments. Dimitri Charrier , M. Kemerink and R.A.J. Janssen. Agenda. Scanning Kelvin Probe Microscope - why & basics SKPM - Problems Parameter free modeling Conclusions. Introduction. = I, , E, V. = organic device. tip.

By harper-richardson
(106 views)

Influential factors:

Influential factors:

Chapter 2 Electrode/electrolyte interface: ----structure and properties. Electrochemical reactions are interfacial reactions , the structure and properties of electrode / electrolytic solution interface greatly influences the reaction. Influential factors:.

By tatiana-pace
(75 views)

The electrical double layer

The electrical double layer

The electrical double layer. D is the static dielectric constant. From Coulombs equation,. By integration we can estimate the energy to separate a charge from the surface. In water W~1.9x10 -20 J, In Air W~1.5x10 -18 J Compare this with thermal energy 1 kT ~4.0x10 -21 J

By rashad-gonzalez
(139 views)

UW LISA Torsion Balance Experiment Scott E Pollack with Stephan Schlamminger, Charlie Hagedorn, &

UW LISA Torsion Balance Experiment Scott E Pollack with Stephan Schlamminger, Charlie Hagedorn, &

UW LISA Torsion Balance Experiment Scott E Pollack with Stephan Schlamminger, Charlie Hagedorn, & Jens Gundlach Center for Experimental Nuclear Physics and Astrophysics University of Washington Workshop on Charging Issues in Experimental Gravity July 27, 2007 LIGO #G070478-00-R. V.

By anjolie-beard
(142 views)

Electrical Properties of Membranes

Electrical Properties of Membranes

Electrical Properties of Membranes. Internal Dipole Potential –probably due to the oriented carbonyl of acyl chains Born Energy – Work to move charges into the bilayer Membrane Surface Potential –due to charges on the surface Local pH at Membrane Surfaces Metal Ion Binding

By candice-bowers
(125 views)

Signatures of Chemical Defects in Carbon Nanotube Electronic Devices

Signatures of Chemical Defects in Carbon Nanotube Electronic Devices

Signatures of Chemical Defects in Carbon Nanotube Electronic Devices. Brett Goldsmith Collins Lab Department of Physics and Astronomy. A broad look at defects. Tools to Study CNT Defects. Fan, Nature Materials. December, 2005. Drain. Source. V SD. V F. V tip.

By allegra-pickett
(88 views)

Influential factors:

Influential factors:

Chapter 2 Electrode/electrolyte interface: ----structure and properties. Electrochemical reactions are interfacial reactions , the structure and properties of electrode / electrolytic solution interface greatly influences the reaction. Influential factors:.

By joel-dawson
(158 views)

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