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Troubleshooting Ni/SiO2/HfO2 Backside Removal for Improved TEM Images

Addressing challenges in removing Ni/SiO2/HfO2 layers to enhance TEM imaging quality. Solutions involve dry Ni-InGaAs bonding, protecting Ni with HSQ, and using thicker Ni layers.

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Troubleshooting Ni/SiO2/HfO2 Backside Removal for Improved TEM Images

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  1. JustAfterCl-ICP

  2. AfterHFetch,and250’C2.5hanneal Lessmembranesupporting,somelineswrapandbreak Insomearea,theNiwastotallyremoved

  3. Tworemainingproblems: TheNi/SiO2/HfO2fromthebacksideisnotsoeasytobefullyremoved,andIcouldnotgetreproduciblegoodTEMimages. TheNilinesontopoftheNiareattachedbytheCl-ICPetch. PossibleSolutions: Dry the Ni-InGaAs bonding again with the small-window TEM grid, as well as thinner Ni layer that will not react all through the 50nm InGaAs. Writing the fins with HSQ fully cover the Ni to protect it, and use thicker Ni (200 nm).

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