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This presentation discusses the groundbreaking approach to solar cell efficiency enhancement using intermediate band solar cells (IBSC) as proposed by Luque and Marti. The limiting efficiency for traditional single-bandgap solar cells is 40.7%, while the IBSC achieves an impressive 63.1% efficiency through photon-induced transitions. Key assumptions in the IBSC model include infinite carrier mobility and the prohibition of nonradiative transitions, with a focus on the role of different quasi-Fermi levels. Research into quantum dot and metallic IBSC structures is highlighted, showcasing the ongoing quest for optimal efficiency in photovoltaic technology.
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"Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels“ by A. Luque and A. Marti (1997) EE 235 Presentation 1 Brian Lambson
Intermediate Band Solar Cell Single bandgap SC Limiting efficiency 40.7% (Shockley-Queisser model) Intermediate band SC Limiting Efficiency 63.1% (Luque and Marti) Image: G.F. Brown, J. W. Laser and Photonics Rev. (2009)
IBSC Model Assumptions Infinite carrier mobility Ideal ohmic contacts No current extracted from IB Three separate quasi-Fermi levels for VB, CB, and IB Nonradiative transitions prohibited Radiative transitions occur through ACI, ACV, and AIV For a given photon energy, only ONE of the three transitions contributes Radiation escapes only through front of cell (perfect mirrors in back) Cell thickness ensures all photons with E greater than any gap energy absorbed Cell illumination is isotropic
63.1% - Calculations 1. ν = number of photons in particular mode ζ = distance along direction of ν from front (ζ=0) to back (ζ=1) of device 2. 3.
Ideal Performance From the calculation for current and using qV= µCV, Luque and Marti found the power and efficiency for different values of εi
Quantum Dot IBSC Band diagram QD-IBSC structure QD-IBSC has demonstrated the IB to CB transition: Source: Marti, A., E. Antolin, et al. Phys. Rev. Lett. (2006)
Metallic IBSC • Incorporates transition metal into wide-bandgap material to induce intermediate band formation • CuGaS2 has been identified as material with strong potential for improvement. Now being actively researched Source: Marti, A., D. F. Marron, et al. J. Appl. Phys. (2008)
Outlook • QD-IBSC – Engineering a large enough gap between the CB and IB is very challenging • Metallic IBSC – Concept has not yet been demonstrated experimentally • How to induce IB formation without degrading transport and other material properties • Theoretical model is an ongoing research topic • Major claim – best performance of any ideal non-complex PV devices– still holds today