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Analytical Predictive Modeling for the Scalability Study of DG and GAA MOSFETs. Hamdy Abd El-Hamid a , Benjamin Iñiguez a , Jaume Roig b a Dept. d’Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili, 43007 Tarragona, Spain. E-mail: hamdy@abd.cat

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analytical predictive modeling for the scalability study of dg and gaa mosfets

Analytical Predictive Modeling for the Scalability Study of DG and GAA MOSFETs

Hamdy Abd El-Hamida, Benjamin Iñigueza, Jaume Roigb

a Dept. d’Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili, 43007 Tarragona, Spain. E-mail: hamdy@abd.cat

bLAAS, CNRS, 31007 Toulouse Cedex 4, France

modeling summary
Modeling Summary
  • We have developed analytical scalable models of the threshold voltage roll-off, DIBL and subthreshold swing of nanoscale Gate All Around (GAA) and Double-Gate (DG) MOSFETs
  • The models are derived from an analytical solution of the 2D or 3D Poisson’s equation, obtained using variable separation
  • Very good agreement with numerical 2D and 3D simulations have been observed
modeling applications
Modeling Applications
  • The models have been used to compare the performance of nanoscale GAA and DG MOSFETs
  • We have determined the dimensions of the devices necessary to obtain a certain value of the subthreshold swing
  • It results that the GAA device can be 33% shorter than the DG MOSFET, and with a 10 mV/V lower DIBL