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Electromagnetically exciting the Electron-Glass The case of microwaves radiation and ac fields

… in an ordered potential (but with Coulomb interactions). …frustration…. Electromagnetically exciting the Electron-Glass The case of microwaves radiation and ac fields. …in a disordered potential. …both…. interaction. … quench the sample from high T …. The basic phenomena.

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Electromagnetically exciting the Electron-Glass The case of microwaves radiation and ac fields

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  1. … in an ordered potential(but with Coulomb interactions) …frustration… Electromagnetically exciting the Electron-GlassThe case of microwaves radiation and ac fields …in a disordered potential …both… interaction

  2. …quench the sample from high T… The basic phenomena …slow relaxation… Unless otherwise mentioned; T=4Kall samples are 2D and in the hopping regime In2O3-x Beryllium

  3. …another way to get it out of equilibrium...electromagnetic radiation …zap it with light (AlGaAs LED, l=0.88mm …like changing gate voltage… …not all photons are born equal…

  4. EC is set by the Coulomb interaction higher energy, correlated distribution, conductance = high Equilibrated Out-of-equilibrium Lower energy, correlated distribution, conductance = lower High energy, random distribution, conductance = high Slowrelaxation Fastrelaxation

  5. sample insulator gate …more ways to get it out of equilibrium... …apply non-ohmic field F…(high voltage) …or raise bath-temperature by DT… …F and DT have qualitatively similar effect …

  6. …origin of the MW-enhanced conductance?…is it heating?? sample …the “memory-Dip (MD ) insulator gate In2O3-x or InxO …MD shape may be used as a thermometer... DG is sub-linear with MW power P… DG is NOT-due to heating…

  7. it’s “universal”… V I II I II R=V/I V II G=I/V

  8. … and it’s trivial …just non-Ohmicity controlled by:

  9. … temperature dependence... …but what about magnitude;how big should F be to account for DG/G ? (which may be of order 1)

  10. … what they don’t want you to know... P doped Si Non-Ohmic Conductivity of Barely Localized Electrons in Three Dimensions T. F. Rosenbaum*, K. Andres and G. A. Thomas Bell Laboratories, Murray Hill, NJ 07974 Solid State Communications, Vol.35, pp.663—666 r(T,F) ar(T)exp(eFL/kBT) OBSERVATION OF ACTIVATIONLESS HOPPING CONDUCTIVITY IN STRONG ELECTRIC FIELDS O. Faran and Z. Ovadyahu Solid State Communications, Vol. 67, No. 8, pp. 823-826, 1988 Strongly-localized In203-x. films eFx= akBT a=1(Shklovskii) a=0.01-0.04(experiment) Doped-Ge (nuclear-transmutation)

  11. …apply non-ohmic field F…(high voltage) …or raise bath-temperature by DT… …but if DG is indeed just a non-Ohmic effect due to the ac field,where is the associated slow relaxation?

  12. … thereisslow relaxation... … but, it goes down with w...

  13. … and isverysmall at the MW regime...

  14. Hopping Conduction in the Presence of an Electromagnetic Wave BY I. P. ZVYAGIN

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